ATE92113T1 - Verfahren fuer dampfniederschlag. - Google Patents

Verfahren fuer dampfniederschlag.

Info

Publication number
ATE92113T1
ATE92113T1 AT89900684T AT89900684T ATE92113T1 AT E92113 T1 ATE92113 T1 AT E92113T1 AT 89900684 T AT89900684 T AT 89900684T AT 89900684 T AT89900684 T AT 89900684T AT E92113 T1 ATE92113 T1 AT E92113T1
Authority
AT
Austria
Prior art keywords
target
spherical
procedure
vapor deposition
plasma
Prior art date
Application number
AT89900684T
Other languages
English (en)
Inventor
Gottfried K Wehner
Original Assignee
Gottfried K Wehner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gottfried K Wehner filed Critical Gottfried K Wehner
Application granted granted Critical
Publication of ATE92113T1 publication Critical patent/ATE92113T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
AT89900684T 1988-01-21 1988-03-24 Verfahren fuer dampfniederschlag. ATE92113T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14630088A 1988-01-21 1988-01-21
EP89900684A EP0352308B1 (de) 1988-01-21 1988-03-24 Verfahren für dampfniederschlag
PCT/US1988/000948 WO1989006709A1 (en) 1988-01-21 1988-03-24 Method of sputtering

Publications (1)

Publication Number Publication Date
ATE92113T1 true ATE92113T1 (de) 1993-08-15

Family

ID=22516749

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89900684T ATE92113T1 (de) 1988-01-21 1988-03-24 Verfahren fuer dampfniederschlag.

Country Status (7)

Country Link
EP (1) EP0352308B1 (de)
JP (1) JPH0776422B2 (de)
KR (1) KR900700652A (de)
AT (1) ATE92113T1 (de)
AU (1) AU2826089A (de)
DE (1) DE3882704T2 (de)
WO (1) WO1989006709A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3852967B2 (ja) * 1995-07-14 2006-12-06 株式会社アルバック 低圧スパッタリング装置
CN105671509B (zh) * 2016-03-31 2018-06-29 成都西沃克真空科技有限公司 一种球面靶阴极机构及溅射镀膜装置
CN119082667A (zh) * 2024-08-28 2024-12-06 南京理工大学 一种磁控溅射制备的大面积wc超导薄膜

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films

Also Published As

Publication number Publication date
JPH02501754A (ja) 1990-06-14
EP0352308B1 (de) 1993-07-28
KR900700652A (ko) 1990-08-16
AU2826089A (en) 1989-08-11
WO1989006709A1 (en) 1989-07-27
EP0352308A4 (de) 1990-06-27
DE3882704T2 (de) 1994-01-13
DE3882704D1 (de) 1993-09-02
JPH0776422B2 (ja) 1995-08-16
EP0352308A1 (de) 1990-01-31

Similar Documents

Publication Publication Date Title
Saenger Pulsed laser deposition. Pt. 1. A review of process characteristics and capabilities
Lugscheider et al. Comparison of the structure of PVD-thin films deposited with different deposition energies
KR900003406A (ko) 물리적 증착 2중 코팅 장치 및 방법
DE3852500D1 (de) Physikalische dampfniederschlag-doppelbeschichtungsvorrichtung und verfahren.
EP0385475A3 (de) Verfahren zur Herstellung eines durchsichtigen leitenden Films
EP0739001A3 (de) Bildung eines isolierenden dünnen Filmes durch eine Vielzahl von Ionenstrahlen
Wolf et al. Ion bombardment during thin film deposition and its influence on mechanical and chemical surface properties
Musil et al. Reactive deposition of hard coatings
Olbrich et al. Superimposed pulse bias voltage used in arc and sputter technology
CA2198983A1 (en) Device for coating a substrate surface
EP0908532A3 (de) Ionenstrahl-Sputtering-System
ATE92113T1 (de) Verfahren fuer dampfniederschlag.
DE59905067D1 (de) Verfahren zum beschichten von folie aus nickel oder nickellegierung
DE59813806D1 (de) Verfahren zum Abscheiden von Schichtsystemen
EP1325167B8 (de) Zerstäubungstarget
ATE154162T1 (de) Vorrichtung zur reaktiven plasmagasphasenabscheidung eines elektrisch nichtleitenden materials unter verwendung einer abgeschirmten sekundäranode
WO2005106070A3 (fr) Procede de depot sous vide
WO2002027057A3 (en) Sputtering target and method of making same
Fancey et al. A coating thickness uniformity model for physical vapour deposition systems—further validity tests
RU93018049A (ru) Способ нанесения вакуумных металлизированных покрытий на диэлектрические подложки
JPS6436764A (en) Manufacture of thin multicomponent system film by sputtering
Enders et al. Thickness deviations of films deposited by ion beam assisted deposition under off-normal ion incidence
JPH01234559A (ja) 被覆膜付鉄鋼部材およびその製造方法
Stuke et al. Adhesion of PVD Coatings
ATE35697T1 (de) Verfahren zum ueberziehen von optischen substraten mit reflexvermindernden schichten, die geaetzt werden koennen.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties