ATE121564T1 - Verfahren zur herstellung von halbleiteranordnungen. - Google Patents

Verfahren zur herstellung von halbleiteranordnungen.

Info

Publication number
ATE121564T1
ATE121564T1 AT89907275T AT89907275T ATE121564T1 AT E121564 T1 ATE121564 T1 AT E121564T1 AT 89907275 T AT89907275 T AT 89907275T AT 89907275 T AT89907275 T AT 89907275T AT E121564 T1 ATE121564 T1 AT E121564T1
Authority
AT
Austria
Prior art keywords
substrate
forming
semiconductor
conductor layer
producing semiconductor
Prior art date
Application number
AT89907275T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Tadashi Shibata
Masaru Umeda
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Application granted granted Critical
Publication of ATE121564T1 publication Critical patent/ATE121564T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering

Landscapes

  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT89907275T 1988-06-17 1989-06-15 Verfahren zur herstellung von halbleiteranordnungen. ATE121564T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63150581A JP2501118B2 (ja) 1988-06-17 1988-06-17 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
ATE121564T1 true ATE121564T1 (de) 1995-05-15

Family

ID=15500012

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89907275T ATE121564T1 (de) 1988-06-17 1989-06-15 Verfahren zur herstellung von halbleiteranordnungen.

Country Status (6)

Country Link
US (1) US5362672A (de)
EP (1) EP0380682B1 (de)
JP (1) JP2501118B2 (de)
AT (1) ATE121564T1 (de)
DE (1) DE68922293T2 (de)
WO (1) WO1989012909A1 (de)

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* Cited by examiner, † Cited by third party
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TW237562B (de) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
CN1151543C (zh) * 1998-07-03 2004-05-26 佳能株式会社 半导体器件及其制造方法
US6387736B1 (en) * 1999-04-26 2002-05-14 Agilent Technologies, Inc. Method and structure for bonding layers in a semiconductor device
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6884327B2 (en) * 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
KR101127370B1 (ko) 2004-12-08 2012-03-29 인피니트 파워 솔루션스, 인크. ＬｉＣｏＯ２의 증착
KR101239776B1 (ko) 2005-02-03 2013-03-06 어플라이드 머티어리얼스, 인코포레이티드 타깃에 인가되는 ｒｆ 소스 파워에 의한 물리 기상 증착플라즈마 반응기
US20060172536A1 (en) * 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
JP2008013829A (ja) * 2006-07-07 2008-01-24 Fujitsu Ltd 金属酸化膜の成膜方法
EP2629590A1 (de) * 2008-06-17 2013-08-21 Hitachi Ltd. Organische lichtemittierende Vorrichtung

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US3271286A (en) * 1964-02-25 1966-09-06 Bell Telephone Labor Inc Selective removal of material using cathodic sputtering
USRE30505E (en) * 1972-05-12 1981-02-03 Lfe Corporation Process and material for manufacturing semiconductor devices
US4043888A (en) * 1973-07-30 1977-08-23 Westinghouse Electric Corporation Superconductive thin films having transition temperature substantially above the bulk materials
US4057476A (en) * 1976-05-26 1977-11-08 General Dynamics Corporation Thin film photovoltaic diodes and method for making same
US4042447A (en) * 1976-11-01 1977-08-16 Sotec Corporation Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
JPS5462776A (en) * 1977-10-27 1979-05-21 Nec Corp Production of compound semiconductor thin films
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US4279969A (en) * 1980-02-20 1981-07-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin niobium carbonitride superconducting films of exceptional purity
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JPS62287071A (ja) * 1986-06-06 1987-12-12 Tadahiro Omi 薄膜の形成装置および形成方法
JPS6333561A (ja) * 1986-07-24 1988-02-13 Fuji Xerox Co Ltd 薄膜形成方法
JPH0750688B2 (ja) * 1986-09-24 1995-05-31 日本電信電話株式会社 薄膜形成法
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
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JPS63170299A (ja) * 1987-01-07 1988-07-14 Nec Corp 化合物半導体の分子線結晶成長方法
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate

Also Published As

Publication number Publication date
EP0380682A1 (de) 1990-08-08
US5362672A (en) 1994-11-08
JPH04340220A (ja) 1992-11-26
DE68922293T2 (de) 1995-12-21
EP0380682B1 (de) 1995-04-19
EP0380682A4 (en) 1990-12-27
DE68922293D1 (de) 1995-05-24
JP2501118B2 (ja) 1996-05-29
WO1989012909A1 (fr) 1989-12-28

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