ATE125311T1 - Verfahren zum kontinuierlichen beschicken einer schmelze. - Google Patents

Verfahren zum kontinuierlichen beschicken einer schmelze.

Info

Publication number
ATE125311T1
ATE125311T1 AT90907778T AT90907778T ATE125311T1 AT E125311 T1 ATE125311 T1 AT E125311T1 AT 90907778 T AT90907778 T AT 90907778T AT 90907778 T AT90907778 T AT 90907778T AT E125311 T1 ATE125311 T1 AT E125311T1
Authority
AT
Austria
Prior art keywords
container
particles
receiving chamber
crucible
dispensed
Prior art date
Application number
AT90907778T
Other languages
English (en)
Inventor
Gary M Freedman
Lawrence L Perletz
John G Willis
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Application granted granted Critical
Publication of ATE125311T1 publication Critical patent/ATE125311T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • External Artificial Organs (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
AT90907778T 1989-05-24 1990-04-25 Verfahren zum kontinuierlichen beschicken einer schmelze. ATE125311T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/356,558 US4968380A (en) 1989-05-24 1989-05-24 System for continuously replenishing melt

Publications (1)

Publication Number Publication Date
ATE125311T1 true ATE125311T1 (de) 1995-08-15

Family

ID=23401949

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90907778T ATE125311T1 (de) 1989-05-24 1990-04-25 Verfahren zum kontinuierlichen beschicken einer schmelze.

Country Status (11)

Country Link
US (1) US4968380A (de)
EP (1) EP0426810B1 (de)
JP (1) JP2872807B2 (de)
KR (1) KR920700314A (de)
CN (1) CN1024571C (de)
AT (1) ATE125311T1 (de)
AU (1) AU622553B2 (de)
CA (1) CA2015950C (de)
DE (1) DE69021010T2 (de)
WO (1) WO1990014450A1 (de)
ZA (1) ZA903538B (de)

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DE3926673A1 (de) * 1989-08-11 1991-02-14 Wacker Chemitronic Verfahren und vorrichtung zur poliertuchaufbereitung beim chemomechanischen polieren, insbesondere von halbleiterscheiben
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
DE4328982C2 (de) * 1993-08-28 1996-02-01 Leybold Ag Verfahren zum Regeln eines Mengenstromes von Partikeln zu einem Schmelztiegel und Regelanordnung zur Durchführung des Verfahrens
US5551977A (en) * 1994-11-14 1996-09-03 Ase Americas, Inc. Susceptor for EFG crystal growth apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
TW429273B (en) * 1996-02-08 2001-04-11 Shinetsu Handotai Kk Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
DE19882384T1 (de) * 1998-03-12 2000-07-27 Super Silicon Crystal Res Inst Zusatzschmelzvorrichtung für einkristallines Material und Verfahren zum Schmelzen von einkristallinem Material
DE19813453A1 (de) * 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
DE19813452A1 (de) 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
US6139811A (en) * 1999-03-25 2000-10-31 Ase Americas, Inc. EFG crystal growth apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US6562132B2 (en) 2001-04-04 2003-05-13 Ase Americas, Inc. EFG crystal growth apparatus and method
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
WO2004097079A2 (en) * 2003-04-24 2004-11-11 Bryan Fickett Source material feeder apparatus for industrial crystal growth systems
EP1577954A1 (de) * 2004-03-09 2005-09-21 RWE SCHOTT Solar GmbH Verfahren zur Förderung von Feststoffpartikeln
DE102004038717A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Herstellungsverfahren für Reaktor zur Zersetzung von Gasen
CN101835927B (zh) * 2007-10-23 2013-05-01 圣戈本陶瓷及塑料股份有限公司 闪烁体晶体以及形成方法
CN101407940B (zh) * 2008-07-24 2012-01-25 中国科学院上海硅酸盐研究所 振动场下晶体生长装置和生长方法
CN101451271B (zh) * 2008-12-18 2010-12-15 浙江大学 用于边缘限定硅膜生长法生产带状多晶硅的装置
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
CN102181917B (zh) * 2011-05-17 2012-10-10 山东大学 一种人工晶体自动控制生长连续加料装置
EP2771126B1 (de) 2011-10-27 2019-09-18 Graco Minnesota Inc. Schmelzofen
US9174231B2 (en) 2011-10-27 2015-11-03 Graco Minnesota Inc. Sprayer fluid supply with collapsible liner
US20130112312A1 (en) * 2011-11-07 2013-05-09 Graco Minnesota Inc. Reversible flow inducer
US9796492B2 (en) 2015-03-12 2017-10-24 Graco Minnesota Inc. Manual check valve for priming a collapsible fluid liner for a sprayer
CN106757318A (zh) * 2016-12-25 2017-05-31 戚松平 一种用于导模炉的连续加料装置及其加料方法
CN107217296B (zh) * 2017-04-28 2019-05-07 常州大学 一种硅片水平生长设备和方法
CN107610788B (zh) * 2017-09-28 2025-02-14 岭东核电有限公司 固态氧控装置
CN109234796A (zh) * 2018-11-06 2019-01-18 四川联合晶体新材料有限公司 一种导模法生长大尺寸蓝宝石单晶板材的系统及方法
CN110042462A (zh) * 2019-04-29 2019-07-23 济南量子技术研究院 一种晶体生长连续加料方法及装置
CN115739435A (zh) 2019-05-31 2023-03-07 固瑞克明尼苏达有限公司 手持式流体喷雾器
CN113008622B (zh) * 2021-03-09 2022-07-26 亚洲硅业(青海)股份有限公司 一种颗粒硅区熔检测采样装置

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NL237618A (de) * 1958-04-03
NL98137C (de) * 1958-09-03
NL238924A (de) * 1959-05-05
DE1240825B (de) * 1962-07-14 1967-05-24 Halbleiterwerk Frankfurt Oder Verfahren zum Ziehen von Einkristallen aus Halbleitermaterial
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US3951348A (en) * 1973-05-24 1976-04-20 Rexnord Inc. Crusher bowl clamping system
US3954551A (en) * 1974-07-17 1976-05-04 Texas Instruments Incorporated Method of pulling silicon ribbon through shaping guide
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4440728A (en) * 1981-08-03 1984-04-03 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
GB2155806A (en) * 1984-03-20 1985-10-02 Mobil Solar Energy Corp Apparatus for replenishing a melt
US4661324A (en) * 1985-02-15 1987-04-28 Mobil Solar Energy Corporation Apparatus for replenishing a melt
DE3733881A1 (de) * 1987-10-07 1989-04-20 Guenter Zierpka Kupplungsvorrichtung zum festen, jedoch wahlweise trennbaren verbinden von greiferschienenabschnitten einer transfereinrichtung zum schrittweisen material- und/oder werkstuecktransport
DE3737051A1 (de) * 1987-10-31 1989-05-11 Leybold Ag Vorrichtung fuer die kontinuierliche zufuhr von schmelzgut
FI901413A7 (fi) * 1989-03-30 1990-10-01 Nippon Kokan Kk Laite piiyksittäiskiteiden valmistamiseksi
JP2525246B2 (ja) * 1989-07-05 1996-08-14 東芝セラミックス株式会社 粒状シリコン原料供給装置

Also Published As

Publication number Publication date
JPH04500063A (ja) 1992-01-09
DE69021010T2 (de) 1996-02-01
DE69021010D1 (de) 1995-08-24
CN1047541A (zh) 1990-12-05
EP0426810A1 (de) 1991-05-15
EP0426810B1 (de) 1995-07-19
CA2015950A1 (en) 1990-11-24
EP0426810A4 (en) 1991-11-21
KR920700314A (ko) 1992-02-19
US4968380A (en) 1990-11-06
AU622553B2 (en) 1992-04-09
CN1024571C (zh) 1994-05-18
AU5555590A (en) 1990-12-18
CA2015950C (en) 1994-12-06
WO1990014450A1 (en) 1990-11-29
JP2872807B2 (ja) 1999-03-24
ZA903538B (en) 1991-02-27

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