ATE128493T1 - Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung. - Google Patents

Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung.

Info

Publication number: ATE128493T1
Authority: AT; Austria
Prior art keywords: isotopically; pure; single crystal; diamond; carbon
Prior art date: 1990-07-02

Application number

AT91110503T

Other languages

English (en)

Inventor

William Frank Banholzer

Thomas Richard Anthony

Dennis Mark Williams

Original Assignee

Gen Electric

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-07-02

Filing date

1991-06-25

Publication date

1995-10-15

1991-06-25 Application filed by Gen Electric filed Critical Gen Electric

1995-10-15 Application granted granted Critical

1995-10-15 Publication of ATE128493T1 publication Critical patent/ATE128493T1/de

Links

239000013078 crystal Substances 0.000 title abstract 17
229910003460 diamond Inorganic materials 0.000 title abstract 12
239000010432 diamond Substances 0.000 title abstract 12
238000004519 manufacturing process Methods 0.000 title abstract 2
239000000758 substrate Substances 0.000 abstract 8
OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 abstract 4
OKTJSMMVPCPJKN-OUBTZVSYSA-N Carbon-13 Chemical compound [13C] OKTJSMMVPCPJKN-OUBTZVSYSA-N 0.000 abstract 4
238000000034 method Methods 0.000 abstract 4
239000008246 gaseous mixture Substances 0.000 abstract 2
239000004215 Carbon black (E152) Substances 0.000 abstract 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
238000009792 diffusion process Methods 0.000 abstract 1
229930195733 hydrocarbon Natural products 0.000 abstract 1
150000002430 hydrocarbons Chemical class 0.000 abstract 1
229910052739 hydrogen Inorganic materials 0.000 abstract 1
239000001257 hydrogen Substances 0.000 abstract 1
239000003863 metallic catalyst Substances 0.000 abstract 1
239000002904 solvent Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Metallurgy (AREA)
General Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Inorganic Chemistry (AREA)
Mechanical Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)

AT91110503T 1990-07-02 1991-06-25 Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung. ATE128493T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/547,651 US5360479A (en)	1990-07-02	1990-07-02	Isotopically pure single crystal epitaxial diamond films and their preparation

Publications (1)

Publication Number	Publication Date
ATE128493T1 true ATE128493T1 (de)	1995-10-15

Family

ID=24185551

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT91110503T ATE128493T1 (de)	1990-07-02	1991-06-25	Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung.

Country Status (13)

Country	Link
US (1)	US5360479A (de)
EP (1)	EP0464611B1 (de)
JP (1)	JPH04270193A (de)
KR (1)	KR920002479A (de)
CN (1)	CN1057869A (de)
AT (1)	ATE128493T1 (de)
AU (1)	AU642744B2 (de)
BR (1)	BR9102763A (de)
CA (1)	CA2042268A1 (de)
DE (1)	DE69113335T2 (de)
ES (1)	ES2078999T3 (de)
IE (1)	IE912296A1 (de)
ZA (1)	ZA914629B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4027580A1 (de) *	1990-08-31	1992-03-05	Lux Benno	Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung
CA2076087A1 (en) *	1991-09-03	1993-03-04	Jerome J. Tiemann	Isotopic diamond coated products and their production
JPH05270987A (ja) *	1992-03-27	1993-10-19	Kanagawa Pref Gov	炭素１３同位体ダイヤモンド基板とその製造法
US5503104A (en) *	1995-03-27	1996-04-02	General Electric Company	Synthetic diamond product
US5634369A (en) *	1995-07-07	1997-06-03	General Electric Company	Composite diamond wire die
US5634370A (en) *	1995-07-07	1997-06-03	General Electric Company	Composite diamond wire die
US5636545A (en) *	1995-07-07	1997-06-10	General Electric Company	Composite diamond wire die
EP0867536A1 (de) *	1997-03-24	1998-09-30	General Electric Company	Preiswert Isotop hergestellte Diamantambosse
EP0867537A1 (de) *	1997-03-24	1998-09-30	General Electric Company	Verfahren zum Herstellen preiswerter isotop hergestellter Diamantambossen
US8591856B2 (en) *	1998-05-15	2013-11-26	SCIO Diamond Technology Corporation	Single crystal diamond electrochemical electrode
US6582513B1 (en) *	1998-05-15	2003-06-24	Apollo Diamond, Inc.	System and method for producing synthetic diamond
US6858080B2 (en) *	1998-05-15	2005-02-22	Apollo Diamond, Inc.	Tunable CVD diamond structures
EP1290251B8 (de) *	2000-06-15	2006-02-01	Element Six (PTY) Ltd	Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
AU2001281404B2 (en)	2001-08-08	2008-07-03	Apollo Diamond, Inc.	System and method for producing synthetic diamond
GB0221949D0 (en) *	2002-09-20	2002-10-30	Diamanx Products Ltd	Single crystal diamond
WO2005080645A2 (en) *	2004-02-13	2005-09-01	Apollo Diamond, Inc.	Diamond structure separation
US20060163584A1 (en) *	2005-01-26	2006-07-27	Robert Linares	Boron-doped diamond semiconductor
US20100247884A1 (en) *	2007-10-03	2010-09-30	National Institute Of Advanced Industrial Science	Stacked body of isotope diamond
US7972444B2 (en) *	2007-11-07	2011-07-05	Mattson Technology, Inc.	Workpiece support with fluid zones for temperature control
GB0813490D0 (en) *	2008-07-23	2008-08-27	Element Six Ltd	Solid state material
GB0813491D0 (en)	2008-07-23	2008-08-27	Element Six Ltd	Diamond Material
WO2014081654A1 (en) *	2012-11-21	2014-05-30	National Oilwell DHT, L.P.	Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds
CN104911702B (zh) *	2015-04-29	2017-07-28	西安交通大学	基于自组装工艺的高质量单晶金刚石生长方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3895313A (en) *	1973-09-17	1975-07-15	Entropy Conversion	Laser systems with diamond optical elements
US4434188A (en) *	1981-12-17	1984-02-28	National Institute For Researches In Inorganic Materials	Method for synthesizing diamond
JPS60118694A (ja) *	1983-11-29	1985-06-26	Mitsubishi Metal Corp	ダイヤモンドの低圧合成法
CH664768A5 (de) *	1985-06-20	1988-03-31	Balzers Hochvakuum	Verfahren zur beschichtung von substraten in einer vakuumkammer.
EP0206820A3 (de) *	1985-06-27	1987-10-28	De Beers Industrial Diamond Division (Proprietary) Limited	Diamantsyntheseverfahren
DE3690606C2 (de) *	1985-11-25	1995-09-21	Yoichi Hirose	Verfahren zur Synthese von Diamant
GB8903793D0 (en) *	1989-02-20	1989-04-05	Plessey Co Plc	Diamond synthesis
AU634601B2 (en) *	1989-12-11	1993-02-25	General Electric Company	Single-crystal diamond of very high thermal conductivity

1990
- 1990-07-02 US US07/547,651 patent/US5360479A/en not_active Expired - Lifetime
1991
- 1991-05-09 CA CA002042268A patent/CA2042268A1/en not_active Abandoned
- 1991-06-17 ZA ZA914629A patent/ZA914629B/xx unknown
- 1991-06-20 AU AU79179/91A patent/AU642744B2/en not_active Expired - Fee Related
- 1991-06-25 EP EP91110503A patent/EP0464611B1/de not_active Expired - Lifetime
- 1991-06-25 AT AT91110503T patent/ATE128493T1/de active
- 1991-06-25 DE DE69113335T patent/DE69113335T2/de not_active Expired - Fee Related
- 1991-06-25 ES ES91110503T patent/ES2078999T3/es not_active Expired - Lifetime
- 1991-06-28 JP JP3183989A patent/JPH04270193A/ja active Pending
- 1991-07-01 IE IE229691A patent/IE912296A1/en unknown
- 1991-07-01 KR KR1019910011091A patent/KR920002479A/ko not_active Withdrawn
- 1991-07-01 BR BR919102763A patent/BR9102763A/pt unknown
- 1991-07-02 CN CN91104585A patent/CN1057869A/zh active Pending

Also Published As

Publication number	Publication date
ZA914629B (en)	1992-06-24
AU7917991A (en)	1992-01-02
CN1057869A (zh)	1992-01-15
EP0464611B1 (de)	1995-09-27
US5360479A (en)	1994-11-01
IE912296A1 (en)	1992-01-15
KR920002479A (ko)	1992-02-28
CA2042268A1 (en)	1992-01-03
BR9102763A (pt)	1992-02-04
ES2078999T3 (es)	1996-01-01
AU642744B2 (en)	1993-10-28
DE69113335T2 (de)	1996-04-18
JPH04270193A (ja)	1992-09-25
EP0464611A1 (de)	1992-01-08
DE69113335D1 (de)	1995-11-02

Publication	Publication Date	Title
ATE128493T1 (de)	1995-10-15	Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung.
DE69033022T2 (de)	1999-09-16	Durchsichtige Diamantschichten und Verfahren zu ihrer Herstellung
ES457595A1 (es)	1978-03-16	Procedimiento para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
KR940000613A (ko)	1994-01-03	평활 표면을 갖는 cvd 다이아몬드 필름 및 이들의 제조방법
ATE224228T1 (de)	2002-10-15	Sinterverfahren für diamanten und diamant- züchtung
ATE115334T1 (de)	1994-12-15	Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern.
KR910015717A (ko)	1991-09-30	Cvd다이아몬드 공작물 및 그 제조법
Miehr et al.	1996	Lewis base adduct stabilized organogallium azides: synthesis and dynamic NMR spectroscopic studies of novel precursors to gallium nitride and role of ammonia as reactive carrier gas
KR930013220A (ko)	1993-07-21	수소화물-형성 금속 기재상에서의 cvd 다이아몬드 성장
ATE50758T1 (de)	1990-03-15	Verfahren zur herstellung von glas- oder keramischen koerpern.
DE3784541D1 (de)	1993-04-15	Verfahren zur herstellung einer niedergeschlagenen schicht.
US4604292A (en)	1986-08-05	X-ray mask blank process
FI854624A0 (fi)	1985-11-22	Framstaellningsfoerfarande foer reaktionsprodukter av cyanvaete.
DE69506279D1 (de)	1999-01-07	Verfahren und vorrichtung zur herstellung von keramischen gegenständen
RU96109312A (ru)	1998-08-27	Способ получения пленки диоксида кремния на подложке
JPH0388324A (ja)	1991-04-12	化合物半導体薄膜の形成方法
FR2423865A1 (fr)	1979-11-16	Procede pour l'application d'une couche epitaxiale sur un substrat a partir d'une phase gazeuse
JPS56164523A (en)	1981-12-17	Vapor phase growth of semiconductor
JPS59164697A (ja)	1984-09-17	気相成長方法
JPS5524413A (en)	1980-02-21	Process of epitaxial growth for semiconductor
JPH01259524A (ja)	1989-10-17	化合物半導体の気相成長方法
ATE32628T1 (de)	1988-03-15	Verfahren und vorrichtung zur kuehlung eines materials und verwendung fuer die herstellung von feuerfesten materialien durch haertung.
JPS60221393A (ja)	1985-11-06	ＧａＡｓ単結晶の製造方法
JPH01246196A (ja)	1989-10-02	ダイヤモンド膜の製造方法
KR920012536A (ko)	1992-07-27	대칭적인 cvd 다이아몬드 제품 및 그의 제조방법