ATE141020T1 - Im fernen uv-empfindlicher photolack, widerstandsfähig gegen den zerfall des latenten bildes - Google Patents

Im fernen uv-empfindlicher photolack, widerstandsfähig gegen den zerfall des latenten bildes

Info

Publication number
ATE141020T1
ATE141020T1 AT94300059T AT94300059T ATE141020T1 AT E141020 T1 ATE141020 T1 AT E141020T1 AT 94300059 T AT94300059 T AT 94300059T AT 94300059 T AT94300059 T AT 94300059T AT E141020 T1 ATE141020 T1 AT E141020T1
Authority
AT
Austria
Prior art keywords
nitro
lower alkyl
ester
polymer
photocoat
Prior art date
Application number
AT94300059T
Other languages
English (en)
Inventor
Richard M Lazarus
Thomas Allan Koes
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Application granted granted Critical
Publication of ATE141020T1 publication Critical patent/ATE141020T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT94300059T 1993-03-05 1994-01-06 Im fernen uv-empfindlicher photolack, widerstandsfähig gegen den zerfall des latenten bildes ATE141020T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/026,934 US5314782A (en) 1993-03-05 1993-03-05 Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative

Publications (1)

Publication Number Publication Date
ATE141020T1 true ATE141020T1 (de) 1996-08-15

Family

ID=21834647

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94300059T ATE141020T1 (de) 1993-03-05 1994-01-06 Im fernen uv-empfindlicher photolack, widerstandsfähig gegen den zerfall des latenten bildes

Country Status (9)

Country Link
US (1) US5314782A (de)
EP (1) EP0614121B1 (de)
JP (1) JP2698547B2 (de)
KR (1) KR940022194A (de)
CN (1) CN1096595A (de)
AT (1) ATE141020T1 (de)
CA (1) CA2111633A1 (de)
DE (1) DE69400344T2 (de)
HK (1) HK120097A (de)

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Publication number Priority date Publication date Assignee Title
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
DE59504286D1 (de) * 1994-09-12 1998-12-24 Siemens Ag Photolithographische strukturerzeugung
WO1996008750A1 (de) * 1994-09-12 1996-03-21 Siemens Aktiengesellschaft Photolithographische strukturerzeugung
US5619663A (en) * 1994-09-16 1997-04-08 Philips Electronics North America Corp. Computer instruction prefetch system
JP3422580B2 (ja) * 1994-12-16 2003-06-30 三菱電機株式会社 半導体装置の製造方法
US5719004A (en) * 1996-08-07 1998-02-17 Clariant Finance (Bvi) Limited Positive photoresist composition containing a 2,4-dinitro-1-naphthol
US5763135A (en) * 1996-09-30 1998-06-09 Clariant Finance (Bvi) Limited Light sensitive composition containing an arylhydrazo dye
TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
US6492086B1 (en) * 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
US7160665B2 (en) * 2002-12-30 2007-01-09 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications
CN100365509C (zh) * 2003-08-22 2008-01-30 奇美实业股份有限公司 正型感光性树脂组成物
JP3977307B2 (ja) * 2003-09-18 2007-09-19 東京応化工業株式会社 ポジ型フォトレジスト組成物及びレジストパターン形成方法
US20050162122A1 (en) * 2004-01-22 2005-07-28 Dunn Glenn M. Fuel cell power and management system, and technique for controlling and/or operating same
US7235344B2 (en) * 2004-06-30 2007-06-26 Intel Corporation Energy harvesting molecules and photoresist technology
JP5137410B2 (ja) * 2006-06-09 2013-02-06 キヤノン株式会社 感光性化合物、感光性組成物、レジストパターンの形成方法及び基板の加工方法
CN101813887B (zh) * 2010-04-12 2012-05-09 东莞长联新材料科技有限公司 一种提高重氮感光胶热稳定性的方法
CN102156385B (zh) * 2011-05-19 2012-10-10 北京师范大学 含2,1,4-重氮萘醌磺酸酚酯的化学增幅型i-线正性光致抗蚀剂组合物

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DE217211C (de) *
US3046121A (en) * 1949-07-23 1962-07-24 Azoplate Corp Process for the manufacture of printing plates and light-sensitive material suttablefor use therein
NL199728A (de) * 1954-08-20
GB1116737A (en) * 1966-02-28 1968-06-12 Agfa Gevaert Nv Bis-(o-quinone diazide) modified bisphenols
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US3915706A (en) * 1974-03-11 1975-10-28 Xerox Corp Imaging system based on photodegradable polyaldehydes
US4273668A (en) * 1977-09-14 1981-06-16 General Electric Company Arylsulfonium salt-solvent mixtures
JPS5562444A (en) * 1978-11-02 1980-05-10 Konishiroku Photo Ind Co Ltd Photosensitive composition
DE2928636A1 (de) * 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
EP0054258B1 (de) * 1980-12-17 1986-03-05 Konica Corporation Lichtempfindliche Zusammensetzungen
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
DE3586263D1 (de) * 1984-03-07 1992-08-06 Ciba Geigy Ag Verfahren zur herstellung von abbildungen.
DE3730785A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2623309B2 (ja) * 1988-02-22 1997-06-25 ユーシービー ソシエテ アノニム レジストパターンを得る方法
DE3817009A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3820699A1 (de) * 1988-06-18 1989-12-21 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5178986A (en) * 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
US5151340A (en) * 1990-07-02 1992-09-29 Ocg Microelectronic Materials, Inc. Selected photoactive methylolated cyclohexanol compounds and their use in radiation-sensitive mixtures
US5308744A (en) * 1993-03-05 1994-05-03 Morton International, Inc. Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives

Also Published As

Publication number Publication date
JP2698547B2 (ja) 1998-01-19
CN1096595A (zh) 1994-12-21
HK120097A (en) 1997-09-05
DE69400344T2 (de) 1997-01-16
EP0614121A1 (de) 1994-09-07
CA2111633A1 (en) 1994-09-06
JPH06301201A (ja) 1994-10-28
DE69400344D1 (de) 1996-09-05
US5314782A (en) 1994-05-24
EP0614121B1 (de) 1996-07-31
KR940022194A (ko) 1994-10-20

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