ATE145944T1 - Target-element für kathodenzerstäubung, verfahren zu dessen herstellung und target für kathodenzerstäubung, welches dieses element aufweist - Google Patents

Target-element für kathodenzerstäubung, verfahren zu dessen herstellung und target für kathodenzerstäubung, welches dieses element aufweist

Info

Publication number
ATE145944T1
ATE145944T1 AT92919317T AT92919317T ATE145944T1 AT E145944 T1 ATE145944 T1 AT E145944T1 AT 92919317 T AT92919317 T AT 92919317T AT 92919317 T AT92919317 T AT 92919317T AT E145944 T1 ATE145944 T1 AT E145944T1
Authority
AT
Austria
Prior art keywords
target
pct
layer
assembly
sputting
Prior art date
Application number
AT92919317T
Other languages
English (en)
Inventor
Guy Campet
Jean-Michel Chabagno
Claude Delmas
Joseph Portier
Jean Salardenne
Original Assignee
Elf Aquitaine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elf Aquitaine filed Critical Elf Aquitaine
Application granted granted Critical
Publication of ATE145944T1 publication Critical patent/ATE145944T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Ceramic Products (AREA)
  • Coating By Spraying Or Casting (AREA)
AT92919317T 1991-09-03 1992-09-01 Target-element für kathodenzerstäubung, verfahren zu dessen herstellung und target für kathodenzerstäubung, welches dieses element aufweist ATE145944T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9110860A FR2680799B1 (fr) 1991-09-03 1991-09-03 Element de cible pour pulverisation cathodique, procede de preparation dudit element et cibles, notamment de grande surface, realisees a partir de cet element.

Publications (1)

Publication Number Publication Date
ATE145944T1 true ATE145944T1 (de) 1996-12-15

Family

ID=9416567

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92919317T ATE145944T1 (de) 1991-09-03 1992-09-01 Target-element für kathodenzerstäubung, verfahren zu dessen herstellung und target für kathodenzerstäubung, welches dieses element aufweist

Country Status (8)

Country Link
US (1) US5522976A (de)
EP (1) EP0602150B1 (de)
JP (1) JPH06510090A (de)
AT (1) ATE145944T1 (de)
CA (1) CA2116776A1 (de)
DE (1) DE69215686D1 (de)
FR (1) FR2680799B1 (de)
WO (1) WO1993005195A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR9610397A (pt) * 1995-08-31 1999-12-21 Innovative Sputtering Tech Processo para a fabricação de artigos de liga ito.
US5807607A (en) * 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6319852B1 (en) 1995-11-16 2001-11-20 Texas Instruments Incorporated Nanoporous dielectric thin film formation using a post-deposition catalyst
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US6063714A (en) * 1995-11-16 2000-05-16 Texas Instruments Incorporated Nanoporous dielectric thin film surface modification
US6130152A (en) 1995-11-16 2000-10-10 Texas Instruments Incorporated Aerogel thin film formation from multi-solvent systems
EP0885079A4 (de) * 1996-03-03 2002-11-13 Tosoh Smd Inc Verfahren zur erzeugung eines endabmessungsnahen planaren sputtertargets und zwischenprodukt dafür
US5963778A (en) * 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
IL127236A0 (en) * 1997-11-26 1999-09-22 Vapor Technologies Inc Apparatus for sputtering or arc evaporation
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
JP3735461B2 (ja) * 1998-03-27 2006-01-18 株式会社シンクロン 複合金属の化合物薄膜形成方法及びその薄膜形成装置
DE19920304A1 (de) * 1999-05-03 2000-11-09 Leybold Materials Gmbh Target
AU2001233871A1 (en) * 2000-02-22 2001-09-03 Qinetiq Limited Method of manufacture for ferro-titanium and other metal alloys electrolytic reduction
US6706239B2 (en) 2001-02-05 2004-03-16 Porvair Plc Method of co-forming metal foam articles and the articles formed by the method thereof
US20020110700A1 (en) * 2001-02-12 2002-08-15 Hein Gerald F. Process for forming decorative films and resulting products
FR2835534B1 (fr) * 2002-02-06 2004-12-24 Saint Gobain CIBLE CERAMIQUE NiOx NON STOECHIOMETRIQUE
WO2006001975A1 (en) * 2004-06-15 2006-01-05 Tosoh Smd, Inc. Metal foam shield for sputter reactor
US7328831B1 (en) 2004-06-25 2008-02-12 Porvair Plc Method of making a brazed metal article and the article formed thereby
US7372610B2 (en) 2005-02-23 2008-05-13 Sage Electrochromics, Inc. Electrochromic devices and methods
EP3360855B1 (de) * 2006-05-18 2020-03-18 Hydro-Quebec Herstellungsverfahren von keramiken, so erhaltene keramiken und ihre verwendung als zielscheibe für kathodenzerstäubung
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets
US8628645B2 (en) * 2007-09-04 2014-01-14 Front Edge Technology, Inc. Manufacturing method for thin film battery
JP5385883B2 (ja) * 2010-10-05 2014-01-08 株式会社神戸製鋼所 ターゲット接合体
US8048707B1 (en) * 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
WO2012112376A1 (en) 2011-02-14 2012-08-23 Tosoh Smd, Inc. Diffusion-bonded sputtering target assembly and method of manufacturing
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
JP6376380B2 (ja) * 2014-07-18 2018-08-22 三菱マテリアル株式会社 ニッケル酸リチウムスパッタリングターゲットの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791955A (en) * 1972-12-11 1974-02-12 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
JPS55165501A (en) * 1979-06-12 1980-12-24 Matsushita Electric Industrial Co Ltd Method of manufacturing gas diffusion electrode
DE2933835C2 (de) * 1979-08-21 1987-02-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kühlteller für Aufstäubanlagen
CH646459A5 (de) * 1982-03-22 1984-11-30 Balzers Hochvakuum Rechteckige targetplatte fuer kathodenzerstaeubungsanlagen.
JPS6078424A (ja) * 1983-10-05 1985-05-04 Matsushita Electric Ind Co Ltd 光学発色素子
JPS60221569A (ja) * 1984-04-19 1985-11-06 Koujiyundo Kagaku Kenkyusho:Kk 電気的蒸着用タ−ゲツト
JPS61104073A (ja) * 1984-10-26 1986-05-22 Matsushita Electric Ind Co Ltd スパツタリング装置のスパツタガン
JPS62243762A (ja) * 1986-04-16 1987-10-24 Seiko Epson Corp スパツタリングタ−ゲツト用バツキングプレ−ト
KR900009071B1 (ko) * 1986-05-28 1990-12-20 가부시기가이샤 히다찌세이사구쇼 함침형 음극
JPS63195259A (ja) * 1987-02-06 1988-08-12 Sumitomo Electric Ind Ltd 二硫化モリブデン薄膜の形成方法
JPS63247360A (ja) * 1987-03-31 1988-10-14 Sumitomo Electric Ind Ltd スパツタ用タ−ゲツト
DE68924095T2 (de) * 1988-05-16 1996-04-04 Tosoh Corp Verfahren zur Herstellung eines Sputtertargets zur Erzeugung einer elektrisch leitenden, durchsichtigen Schicht.
JPH0243356A (ja) * 1988-08-04 1990-02-13 Tosoh Corp 透明導電膜用スパッタリングターゲットの製造方法
US5190630A (en) * 1989-03-01 1993-03-02 Kabushiki Kaisha Toshiba Sputtering target
US5086351A (en) * 1989-07-13 1992-02-04 M&T Chemicals, Inc. Electrochromic elements, materials for use in such element, processes for making such elements and such materials and use of such element in an electrochromic glass device
JPH0774436B2 (ja) * 1990-09-20 1995-08-09 富士通株式会社 薄膜形成方法

Also Published As

Publication number Publication date
EP0602150B1 (de) 1996-12-04
FR2680799B1 (fr) 1993-10-29
FR2680799A1 (fr) 1993-03-05
JPH06510090A (ja) 1994-11-10
DE69215686D1 (de) 1997-01-16
US5522976A (en) 1996-06-04
CA2116776A1 (fr) 1993-03-18
WO1993005195A1 (fr) 1993-03-18
EP0602150A1 (de) 1994-06-22

Similar Documents

Publication Publication Date Title
DE69215686D1 (de) Target-Element für Kathodenzerstäubung, Verfahren zu dessen Herstellung und Target für Kathodenzerstäubung, welches dieses Element aufweist
ES2128986A1 (es) Plancha de prensa de aluminio y procedimiento para su fabricacion.
CA2168871A1 (en) Crystalline multilayer structure and manufacturing method thereof
ATE224964T1 (de) Verfahren zum beschichten mit dünnen metallschichten von gruppe iii a-metallen
SE8403429D0 (sv) Kropp med superhard beleggning
ES2071440T3 (es) Metodo para producir placas metalicas chapadas.
ATE142375T1 (de) Verfahren zur herstellung einer piezoelektrischen drucksensitiven taste oder tastatur und durch dieses verfahren erhaltenes produkt
EP0798102A3 (de) Selbstklebendes Prepreg, Verfahren zu seiner Herstellung und seine Verwendung
EP0567124A3 (de) Verbindungswerkzeug mit Diamantkopf und dessen Herstellungsverfahren
Kubin The Low-Temperature Plastic Deformation of B. C. C. Metals
MY122581A (en) Electrolytic copper foil with carrier foil and copper-clad laminate using the electrolytic copper foil with carrier foil.
BR9206100A (pt) Processo para o isolamento de tubos
ES464859A1 (es) Procedimiento y dispositivo para la fabricacion continua de material estratificado.
ATE150585T1 (de) Verfahren zur herstellung einer halbleitervorrichtung mit einer verdrahtungsstruktur hoher dichte
DE3852529D1 (de) Treffplatte für eine röntgenröhre, verfahren zu ihrer herstellung und röntgenröhre.
EP0856399A3 (de) Verbundstoff und uniaxial orientierter Verbundwerkstoff
FR2707673B1 (fr) Procédé de métallisation de substrats non-conducteurs.
ATE213225T1 (de) Sinterverfahren
MY120359A (en) Method for manufacturing electronic parts
JPS5667937A (en) Semiconductor system
TW362067B (en) Metal sheet with highly workable polyterephthalic acid ethyl hydroxide ester resin coating
EP0735523A3 (de) Magnetisches Aufzeichnungsmedium und Verfahren zu seiner Herstellung
IL116979A (en) Insulator with cement compound and method for its production
ATE218169T1 (de) Verfahren zur herstellung von indium-zinn-oxod (ito) legierungsgegenständen
KR890005827A (ko) 자기 금속 박막층 제조방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties