ATE148950T1 - Diamanttemperatursensor - Google Patents

Diamanttemperatursensor

Info

Publication number
ATE148950T1
ATE148950T1 AT93306482T AT93306482T ATE148950T1 AT E148950 T1 ATE148950 T1 AT E148950T1 AT 93306482 T AT93306482 T AT 93306482T AT 93306482 T AT93306482 T AT 93306482T AT E148950 T1 ATE148950 T1 AT E148950T1
Authority
AT
Austria
Prior art keywords
contacts
diamond
temperature
layer
sensor
Prior art date
Application number
AT93306482T
Other languages
English (en)
Inventor
Barbara Lynn Jones
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Application granted granted Critical
Publication of ATE148950T1 publication Critical patent/ATE148950T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/26Measuring radiation intensity with resistance detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/34Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
    • G01K7/343Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements the dielectric constant of which is temperature dependant

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thermistors And Varistors (AREA)
  • Radiation Pyrometers (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Inorganic Insulating Materials (AREA)
AT93306482T 1992-08-17 1993-08-17 Diamanttemperatursensor ATE148950T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929217436A GB9217436D0 (en) 1992-08-17 1992-08-17 Diamond temperature sensor

Publications (1)

Publication Number Publication Date
ATE148950T1 true ATE148950T1 (de) 1997-02-15

Family

ID=10720464

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93306482T ATE148950T1 (de) 1992-08-17 1993-08-17 Diamanttemperatursensor

Country Status (7)

Country Link
US (1) US5407276A (de)
EP (1) EP0583974B1 (de)
JP (1) JPH0749270A (de)
AT (1) ATE148950T1 (de)
DE (1) DE69308087T2 (de)
GB (1) GB9217436D0 (de)
ZA (1) ZA936006B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2327306A (en) * 1996-04-26 1999-01-20 Austin Taylor Communicat Ltd Electrical socket for two plugs
GB9608640D0 (en) * 1996-04-26 1996-07-03 Austin Taylor Communicat Ltd An electrical connector
FI101831B (fi) * 1997-02-20 1998-08-31 Quantronics Oy Menetelmä, laite ja järjestely säteilyn määrittämiseksi
US5883844A (en) * 1997-05-23 1999-03-16 Stmicroelectronics, Inc. Method of stress testing integrated circuit having memory and integrated circuit having stress tester for memory thereof
US7195339B2 (en) * 1997-07-15 2007-03-27 Silverbrook Research Pty Ltd Ink jet nozzle assembly with a thermal bend actuator
US6505914B2 (en) * 1997-10-02 2003-01-14 Merckle Gmbh Microactuator based on diamond
EP1052502A4 (de) * 1998-09-02 2003-02-26 Maekawa Seisakusho Kk Berührungsloser temperaturmessfühler für nahrungsmittel
US6390672B1 (en) * 2000-01-20 2002-05-21 Harris Corporation Space vehicle with temperature sensitive oscillator and associated method of sensing temperature in space
GB0006318D0 (en) * 2000-03-15 2000-05-03 De Beers Ind Diamond Radiation detector
JP4528943B2 (ja) * 2004-04-27 2010-08-25 独立行政法人産業技術総合研究所 キャパシタンス温度センサ及び温度測定装置
DE102009018210C5 (de) 2009-04-21 2022-08-18 Khs Gmbh Verfahren und Vorrichtung zur Überwachung der Intensität eines Elektronenstrahles
US9515243B2 (en) 2014-12-22 2016-12-06 Infineon Technologies Ag Temperature sensor
US20170097252A1 (en) * 2015-10-05 2017-04-06 Wisenstech Ltd. Composite mems flow sensor on silicon-on-insulator device and method of making the same
US10480974B2 (en) * 2015-10-05 2019-11-19 Siargo Ltd. Composite MEMS flow sensor on silicon-on-insulator device and method of making the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR959423A (fr) * 1947-05-14 1950-03-29 Western Electric Co Procédés et appareils pour induire une conductibilité électrique dans les isolants.
US2760078A (en) * 1952-05-27 1956-08-21 Well Surveys Inc Conduction counter for radioactivity well logging
US3065402A (en) * 1959-12-21 1962-11-20 Ibm Temperature stabilized non-linear reactance elements and circuits
GB998534A (en) * 1961-03-27 1965-07-14 Intron Int Inc Thermally sensitive capacitive circuit element
US3493913A (en) * 1968-10-17 1970-02-03 Orvin E Wagner Thermally sensitive material of the semiconductor or dielectric type
GB1260730A (en) * 1969-06-13 1972-01-19 Max Charles Robinson Improvements in and relating to capacitance thermometers
US3649891A (en) * 1970-06-18 1972-03-14 Corning Glass Works Capacitive cryogenic thermometer
US3728641A (en) * 1970-08-06 1973-04-17 Suwa Seikosha Kk Variable temperature compensating capacitor for crystal oscillators
US3716759A (en) * 1970-10-12 1973-02-13 Gen Electric Electronic device with thermally conductive dielectric barrier
US4213797A (en) * 1978-03-23 1980-07-22 Arden Sher Radiant energy to electric energy converter
US4545254A (en) * 1984-06-01 1985-10-08 Ceramphysics, Inc. Materials and methods for pressure and temperature sensors at cryogenic temperatures
JPS6488128A (en) * 1987-09-29 1989-04-03 Murata Manufacturing Co Temperature sensor
CA1289683C (en) * 1987-10-27 1991-09-24 De Beers Industrial Diamond Division (Proprietary) Diamond radiation probe
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
US5102720A (en) * 1989-09-22 1992-04-07 Cornell Research Foundation, Inc. Co-fired multilayer ceramic tapes that exhibit constrained sintering
US5027253A (en) * 1990-04-09 1991-06-25 Ibm Corporation Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards

Also Published As

Publication number Publication date
DE69308087D1 (de) 1997-03-27
GB9217436D0 (en) 1992-09-30
JPH0749270A (ja) 1995-02-21
EP0583974B1 (de) 1997-02-12
DE69308087T2 (de) 1997-08-28
ZA936006B (en) 1994-03-10
US5407276A (en) 1995-04-18
EP0583974A1 (de) 1994-02-23

Similar Documents

Publication Publication Date Title
ATE148950T1 (de) Diamanttemperatursensor
US5719033A (en) Thin film transistor bio/chemical sensor
AU511235B2 (en) Semiconductor device including an amorphous silicon layer
DE69111960D1 (de) Neutronendetektor aus Diamant.
ATE252244T1 (de) Elektrochrome vorrichtung
GB1536717A (en) Surface acoustic wave devices
DE3171252D1 (en) Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate and method for making a field effect transistor
EP0157489A3 (de) Feldeffekttransistoren aus amorphem Silicium, ihre Herstellung und ihre Anwendung bei Flüssigkristall-Anzeigetafeln
EP0081992A3 (de) Halbleiteranordnung mit keramischer Packung
JPS6486053A (en) Sensitive element
WO1988008965A3 (fr) Dispositif de mesure de la temperature de corps semi-conducteurs, son procede de fabrication et procede de mesure de la temperature de corps semi-conducteurs lors de processus de malleabilisation
SG66275A1 (en) Semiconductor device containing electrostatic capacitive element and method for manufacturing same
TW529773U (en) Semiconductor device
JPS55121669A (en) Method of forming inactive layer on integrated circuit device having substrate of semiconductor material
FR2487123B1 (fr) Dispositif semi-conducteur et procede pour relier celui-ci a un support
JPS5650533A (en) Semiconductor device
JPS5762053A (en) Photoconductive member
JPS5387188A (en) Semiconductor device
JPS5350979A (en) Method of treatment of thin oxide layer on silicon substrate
JPS5759389A (en) Semiconductor strain gauge type pressure sensor
JPS53129981A (en) Production of semiconductor device
GB1513371A (en) Sensor or detector element for an electrical hygrometer
JPS6420558A (en) Photosensitive body and its manufacture
JPS5339879A (en) Production of silicon gate mis semiconductor device
KR960008734B1 (en) Thin film transistor and manufacturing method thereof

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties