ATE150212T1 - Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafür - Google Patents

Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafür

Info

Publication number
ATE150212T1
ATE150212T1 AT92106815T AT92106815T ATE150212T1 AT E150212 T1 ATE150212 T1 AT E150212T1 AT 92106815 T AT92106815 T AT 92106815T AT 92106815 T AT92106815 T AT 92106815T AT E150212 T1 ATE150212 T1 AT E150212T1
Authority
AT
Austria
Prior art keywords
light emitting
type semiconductor
semiconductor material
polycrystalline layer
emitting device
Prior art date
Application number
AT92106815T
Other languages
English (en)
Inventor
Hideshi Kawasaki
Hiroyuki Tokunaga
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE150212T1 publication Critical patent/ATE150212T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Led Devices (AREA)
AT92106815T 1991-04-22 1992-04-21 Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafür ATE150212T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11652391 1991-04-22
JP10077892A JP3207918B2 (ja) 1991-04-22 1992-04-21 Ｉｉｉ−ｖ族化合物の多結晶半導体材料を用いた発光素子およびその製造方法

Publications (1)

Publication Number Publication Date
ATE150212T1 true ATE150212T1 (de) 1997-03-15

Family

ID=26441738

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92106815T ATE150212T1 (de) 1991-04-22 1992-04-21 Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafür

Country Status (5)

Country Link
US (1) US5369290A (de)
EP (1) EP0510587B1 (de)
JP (1) JP3207918B2 (de)
AT (1) ATE150212T1 (de)
DE (1) DE69218022T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE159302T1 (de) * 1990-11-07 1997-11-15 Canon Kk Iii-v verbindungs-halbleiter-vorrichtung, drucker- und anzeigevorrichtung unter verwendung derselben, und verfahren zur herstellung dieser vorrichtung
JPH0531957A (ja) * 1991-05-23 1993-02-09 Canon Inc 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置
EP0514889B1 (de) * 1991-05-23 1997-03-12 Canon Kabushiki Kaisha Lichtemittierende Vorrichtung, optischer Druckkopf mit solcher Vorrichtung, und optischer Drucker mit solchem Druckkopf
AU4695096A (en) * 1995-01-06 1996-07-24 National Aeronautics And Space Administration - Nasa Minority carrier device
US6479939B1 (en) * 1998-10-16 2002-11-12 Si Diamond Technology, Inc. Emitter material having a plurlarity of grains with interfaces in between
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
US6887736B2 (en) * 2002-06-24 2005-05-03 Cermet, Inc. Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
JP4063050B2 (ja) * 2002-10-31 2008-03-19 豊田合成株式会社 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法
JP4748986B2 (ja) * 2002-11-01 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US9406505B2 (en) * 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US10923348B2 (en) 2019-05-29 2021-02-16 International Business Machines Corporation Gate-all-around field effect transistor using template-assisted-slective-epitaxy

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194581A (ja) * 1984-03-16 1985-10-03 Nec Corp 多結晶シリコン太陽電池
JP2659745B2 (ja) * 1987-03-26 1997-09-30 キヤノン株式会社 ▲ｉｉｉ▼−ｖ族化合物結晶物品およびその形成方法
JP2592834B2 (ja) * 1987-03-27 1997-03-19 キヤノン株式会社 結晶物品およびその形成方法
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5036373A (en) * 1989-06-01 1991-07-30 Semiconductor Energy Laboratory Co., Ltd. Electric device with grains and an insulating layer

Also Published As

Publication number Publication date
JPH05129657A (ja) 1993-05-25
DE69218022T2 (de) 1997-08-14
JP3207918B2 (ja) 2001-09-10
US5369290A (en) 1994-11-29
DE69218022D1 (de) 1997-04-17
EP0510587A1 (de) 1992-10-28
EP0510587B1 (de) 1997-03-12

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