ATE150873T1 - Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip - Google Patents

Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip

Info

Publication number
ATE150873T1
ATE150873T1 AT93911119T AT93911119T ATE150873T1 AT E150873 T1 ATE150873 T1 AT E150873T1 AT 93911119 T AT93911119 T AT 93911119T AT 93911119 T AT93911119 T AT 93911119T AT E150873 T1 ATE150873 T1 AT E150873T1
Authority
AT
Austria
Prior art keywords
self
producing
chip containing
semiconductor circuit
integrated semiconductor
Prior art date
Application number
AT93911119T
Other languages
English (en)
Inventor
Robert W K Tsang
Theresa A Core
Steven J Sherman
A Paul Brokaw
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Application granted granted Critical
Publication of ATE150873T1 publication Critical patent/ATE150873T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/13—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position
    • G01P15/131—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position with electrostatic counterbalancing means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/112—Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT93911119T 1992-06-17 1993-05-06 Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip ATE150873T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89976592A 1992-06-17 1992-06-17

Publications (1)

Publication Number Publication Date
ATE150873T1 true ATE150873T1 (de) 1997-04-15

Family

ID=25411527

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93911119T ATE150873T1 (de) 1992-06-17 1993-05-06 Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip

Country Status (5)

Country Link
EP (1) EP0646246B1 (de)
JP (1) JPH07507903A (de)
AT (1) ATE150873T1 (de)
DE (1) DE69309274T2 (de)
WO (1) WO1993025915A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3435844B2 (ja) * 1994-03-07 2003-08-11 株式会社デンソー 半導体加速度センサ及びその製造方法
DE4411130A1 (de) 1994-03-30 1995-10-05 Siemens Ag Sensoreinheit mit mindestens einem Beschleunigungssensor, z. B. zur Kfz-Airbagauslösung, und Verfahren zu seiner Herstellung
DE4414968A1 (de) * 1994-04-28 1995-11-02 Siemens Ag Mikrosystem mit integrierter Schaltung und mikromechanischem Bauteil und Herstellverfahren
US5510156A (en) * 1994-08-23 1996-04-23 Analog Devices, Inc. Micromechanical structure with textured surface and method for making same
US5940735A (en) * 1997-08-25 1999-08-17 Advanced Micro Devices, Inc. Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride/oxynitride films
JP3307328B2 (ja) * 1998-05-11 2002-07-24 株式会社デンソー 半導体力学量センサ
RU2251114C1 (ru) * 2003-12-26 2005-04-27 Ачильдиев Владимир Михайлович Микромеханический датчик и способ его изготовления

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918032A (en) * 1988-04-13 1990-04-17 General Motors Corporation Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures
EP0543901B1 (de) * 1990-08-17 1995-10-04 Analog Devices, Inc. Monolithischer beschleunigungsmesser

Also Published As

Publication number Publication date
WO1993025915A1 (en) 1993-12-23
DE69309274T2 (de) 1997-10-30
EP0646246A1 (de) 1995-04-05
DE69309274D1 (de) 1997-04-30
JPH07507903A (ja) 1995-08-31
EP0646246B1 (de) 1997-03-26

Similar Documents

Publication Publication Date Title
DE69431385D1 (de) Verfahren zur Herstellung von Silizium-Halbleiterplättchen
DE69325325D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69434773D1 (de) Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern
DE3381215D1 (de) Integrierte halbleiterschaltungen und verfahren zur herstellung.
DE68904672D1 (de) Halbleiteranordnung, deren struktur die wirkung des parasitischen transistors erschwert und verfahren zur herstellung.
DE69737702D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE68925442D1 (de) Verfahren zur Herstellung von Halbleiterbauelementen sowie Leiterrahmen und ein differentiales Ueberlappungsgerät hierfür
DE69116058D1 (de) Verfahren zur Herstellung integrierter Schaltungen
DE69405435D1 (de) Verfahren und Vorrichtung für die Herstellung von elektrisch zusammengeschalteten Schaltungen
DE68926986D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE3685124D1 (de) Integriertes halbleiterschaltungsbauelement und verfahren zu seiner herstellung.
DE69401837D1 (de) Verfahren zur Herstellung von pyrogenem Siliziumdioxid
DE69005129D1 (de) Verfahren zur Herstellung von integrierten Schaltungen mit EPROM-Speicher-Transistoren und logischen Transistoren.
DE69622928D1 (de) Verfahren zur Herstellung von Schutzschichten aus Siliziumdioxid
DE69015494D1 (de) Selbstausrichtende Justiermarke für die Herstellung von integrierten Schaltungen.
EP0589411A3 (de) Siliciumnitrid-Sinterkörper und Verfahren zu seiner Herstellung.
DE69432016D1 (de) Verfahren zur Herstellung integrierter Schaltungen und erzeugte Halbleiterscheibe
DE69302771D1 (de) Verfahren zur Herstellung von gesintertem Siliciumnitrid
DE68917003D1 (de) Verfahren zur Herstellung von Halbleiterbauelementen, die gegen Musterverunreinigungen geschützt sind.
DE69126153D1 (de) Verfahren zur Herstellung von verbundenen Halbleiterplättchen
ATE350765T1 (de) Verfahren zur herstellung einer halbleitervorrichtunng und eine halbleitervorrichtung
DE69309274D1 (de) Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip
DE69411696D1 (de) Verfahren zur Herstellung eines integrierten, optischen Halbleiterschaltkreises
DE69126230D1 (de) Silizium-Photodiode für monolithisch integrierte Schaltungen und Herstellungsverfahren
DE69425748D1 (de) Transistoren und verfahren zur herstellung