ATE161657T1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
ATE161657T1
ATE161657T1 AT90908684T AT90908684T ATE161657T1 AT E161657 T1 ATE161657 T1 AT E161657T1 AT 90908684 T AT90908684 T AT 90908684T AT 90908684 T AT90908684 T AT 90908684T AT E161657 T1 ATE161657 T1 AT E161657T1
Authority
AT
Austria
Prior art keywords
floating gate
electrode
capacitive coupling
semiconductor arrangement
substrate
Prior art date
Application number
AT90908684T
Other languages
English (en)
Inventor
Tadashi Shibata
Tadahiro Ohmi
Original Assignee
Tadashi Shibata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadashi Shibata filed Critical Tadashi Shibata
Application granted granted Critical
Publication of ATE161657T1 publication Critical patent/ATE161657T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computational Linguistics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AT90908684T 1989-06-02 1990-06-01 Halbleiteranordnung ATE161657T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1141463A JP2662559B2 (ja) 1989-06-02 1989-06-02 半導体装置

Publications (1)

Publication Number Publication Date
ATE161657T1 true ATE161657T1 (de) 1998-01-15

Family

ID=15292470

Family Applications (2)

Application Number Title Priority Date Filing Date
AT90908684T ATE161657T1 (de) 1989-06-02 1990-06-01 Halbleiteranordnung
AT96110650T ATE251343T1 (de) 1989-06-02 1990-06-01 Transistor mit schwebendem gate und mehreren steuergates

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT96110650T ATE251343T1 (de) 1989-06-02 1990-06-01 Transistor mit schwebendem gate und mehreren steuergates

Country Status (6)

Country Link
US (2) US5258657A (de)
EP (2) EP0516847B1 (de)
JP (1) JP2662559B2 (de)
AT (2) ATE161657T1 (de)
DE (2) DE69034105T2 (de)
WO (1) WO1990015444A1 (de)

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JP2662559B2 (ja) * 1989-06-02 1997-10-15 直 柴田 半導体装置
US5621336A (en) * 1989-06-02 1997-04-15 Shibata; Tadashi Neuron circuit
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors
EP0570584A1 (de) * 1991-01-12 1993-11-24 SHIBATA, Tadashi Halbleiter-vorrichtung
TW203665B (de) * 1991-03-21 1993-04-11 Shibata Naoru
JP3269659B2 (ja) * 1992-05-27 2002-03-25 直 柴田 半導体装置
KR950007353B1 (ko) * 1992-05-30 1995-07-10 정호선 시냅스 모스 트랜지스터
JP3119392B2 (ja) * 1992-06-03 2000-12-18 直 柴田 半導体装置
JP3421365B2 (ja) * 1992-07-29 2003-06-30 直 柴田 半導体装置
JPH0677426A (ja) * 1992-08-26 1994-03-18 Sunao Shibata 半導体集積回路
JP3438241B2 (ja) * 1992-10-29 2003-08-18 直 柴田 半導体神経回路装置
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
JP3278080B2 (ja) * 1993-02-22 2002-04-30 直 柴田 半導体集積回路
JP2942088B2 (ja) * 1993-03-19 1999-08-30 ローム株式会社 半導体装置の動作方法、および半導体装置
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JP3289748B2 (ja) * 1993-11-30 2002-06-10 直 柴田 半導体装置
JP3289749B2 (ja) * 1993-12-02 2002-06-10 直 柴田 半導体集積回路
JP3611340B2 (ja) * 1993-12-28 2005-01-19 直 柴田 半導体回路
EP0694198A1 (de) * 1994-02-15 1996-01-31 SHIBATA, Tadashi Halbleiter anordnung
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP2846822B2 (ja) * 1994-11-28 1999-01-13 モトローラ株式会社 ２層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム方法
JP3406949B2 (ja) * 1995-01-31 2003-05-19 キヤノン株式会社 半導体集積回路装置
WO1996030855A1 (en) * 1995-03-24 1996-10-03 Tadashi Shibata Semiconductor arithmetic circuit
US5644253A (en) * 1995-03-30 1997-07-01 Fujitsu Limited Multiple-valued logic circuit
JP2937805B2 (ja) * 1995-05-19 1999-08-23 モトローラ株式会社 ２層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム／消去／読出方法
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JP2000505218A (ja) * 1996-01-25 2000-04-25 シーメンス アクチエンゲゼルシヤフト 可変入力ウェイトを有する半導体ニューロン
DE19609078C1 (de) * 1996-03-08 1997-06-05 Siemens Ag Schwellwertlogik mit verbessertem Signal-Rausch-Abstand
JP3402909B2 (ja) * 1996-03-12 2003-05-06 アルプス電気株式会社 薄膜トランジスタ装置及び液晶表示装置
US5753954A (en) * 1996-07-19 1998-05-19 National Semiconductor Corporation Single-poly neuron MOS transistor
DE19630111C1 (de) * 1996-07-25 1997-08-14 Siemens Ag Vorrichtungen zur selbstjustierenden Arbeitspunkteinstellung in Verstärkerschaltungen mit Neuron-MOS-Transistoren
DE19630112C1 (de) * 1996-07-25 1997-08-14 Siemens Ag Verstärker mit Neuron-MOS-Transistoren
JPH1051007A (ja) * 1996-08-02 1998-02-20 Semiconductor Energy Lab Co Ltd 半導体装置
DE19700983C2 (de) * 1997-01-14 1998-12-03 Siemens Ag Digital/Analog-Umsetzer
JP3628136B2 (ja) * 1997-01-30 2005-03-09 富士通株式会社 容量結合を利用した論理回路、ａｄ変換回路及びｄａ変換回路
JPH10224224A (ja) * 1997-02-03 1998-08-21 Sunao Shibata 半導体演算装置
JPH10283793A (ja) * 1997-02-06 1998-10-23 Sunao Shibata 半導体回路
US5806054A (en) * 1997-02-14 1998-09-08 National Semiconductor Corporation Neuron MOSFET module structure for binary logic circuits
JPH10260817A (ja) 1997-03-15 1998-09-29 Sunao Shibata 半導体演算回路及びデ−タ処理装置
JPH10257352A (ja) 1997-03-15 1998-09-25 Sunao Shibata 半導体演算回路
US5864835A (en) * 1997-03-24 1999-01-26 Gorelik; Vladimir A. Apparatus for simulating a biological neuron
US6150851A (en) * 1997-06-06 2000-11-21 Tadahiro Ohmi Charge transfer amplifier circuit, voltage comparator, and sense amplifier
JPH1196276A (ja) 1997-09-22 1999-04-09 Sunao Shibata 半導体演算回路
TW409253B (en) * 1997-09-29 2000-10-21 Siemens Ag Associative memory and its operation method
JP3760614B2 (ja) * 1997-12-26 2006-03-29 ソニー株式会社 半導体装置及びその制御方法
US6470328B1 (en) 1998-08-07 2002-10-22 Monolith Company, Ltd. Artificial neuron on the base of B-driven threshold element
JP3305267B2 (ja) 1998-08-07 2002-07-22 株式会社モノリス シナプス素子、しきい値回路およびニューロン装置
US6430585B1 (en) 1998-09-21 2002-08-06 Rn2R, L.L.C. Noise tolerant conductance-based logic gate and methods of operation and manufacturing thereof
JP3226513B2 (ja) 1999-08-09 2001-11-05 株式会社半導体理工学研究センター 演算回路、演算装置、及び半導体演算回路
JP3199707B2 (ja) 1999-08-09 2001-08-20 株式会社半導体理工学研究センター 半導体演算回路及び演算装置
TW446192U (en) * 2000-05-04 2001-07-11 United Microelectronics Corp Electrostatic discharge protection circuit
US6407425B1 (en) * 2000-09-21 2002-06-18 Texas Instruments Incorporated Programmable neuron MOSFET on SOI
US6501294B2 (en) 2001-04-26 2002-12-31 International Business Machines Corporation Neuron circuit
TW516037B (en) * 2001-07-13 2003-01-01 Macronix Int Co Ltd Buffer and method for compensating adjacent bit threshold voltage
JP3877597B2 (ja) * 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型ｍｏｓバラクタ
KR100598049B1 (ko) * 2004-10-28 2006-07-07 삼성전자주식회사 멀티 비트 비휘발성 메모리 셀을 포함하는 반도체 소자 및그 제조 방법
WO2007124291A2 (en) 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
JP2007335648A (ja) * 2006-06-15 2007-12-27 Toppan Printing Co Ltd デジタル−アナログ変換器
KR100823450B1 (ko) * 2006-12-27 2008-04-17 동부일렉트로닉스 주식회사 반도체 소자와 이의 제조 방법
US7535758B2 (en) * 2007-02-06 2009-05-19 Maxim Integrated Products, Inc. One or multiple-times programmable device
US7719359B1 (en) 2007-07-31 2010-05-18 Maxim Integrated Products, Inc. Low noise variable gain amplifier
US10410117B2 (en) 2008-09-21 2019-09-10 Brainchip, Inc. Method and a system for creating dynamic neural function libraries
JP5858020B2 (ja) 2013-10-03 2016-02-10 株式会社デンソー 群情報記憶認識装置
CN106910773B (zh) * 2017-02-21 2019-08-20 南京大学 多栅极神经元晶体管及其制备方法和构成的神经网络

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Also Published As

Publication number Publication date
JP2662559B2 (ja) 1997-10-15
EP0739041A2 (de) 1996-10-23
EP0739041B1 (de) 2003-10-01
DE69034105T2 (de) 2004-04-22
DE69031870D1 (de) 1998-02-05
EP0739041A3 (de) 1996-11-06
DE69031870T2 (de) 1998-04-16
ATE251343T1 (de) 2003-10-15
WO1990015444A1 (fr) 1990-12-13
US5608340A (en) 1997-03-04
EP0516847A4 (de) 1992-03-05
EP0516847B1 (de) 1997-12-29
JPH036679A (ja) 1991-01-14
US5258657A (en) 1993-11-02
EP0516847A1 (de) 1992-12-09
DE69034105D1 (de) 2003-11-06

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties