ATE169062T1 - Verfahren und vorrichtung zum sputtern supraleitender dünnschichten aus niob auf kupferne viertelwellen-resonanzhohlräume zur beschleunigung schwerer ionen - Google Patents

Verfahren und vorrichtung zum sputtern supraleitender dünnschichten aus niob auf kupferne viertelwellen-resonanzhohlräume zur beschleunigung schwerer ionen

Info

Publication number
ATE169062T1
ATE169062T1 AT92830445T AT92830445T ATE169062T1 AT E169062 T1 ATE169062 T1 AT E169062T1 AT 92830445 T AT92830445 T AT 92830445T AT 92830445 T AT92830445 T AT 92830445T AT E169062 T1 ATE169062 T1 AT E169062T1
Authority
AT
Austria
Prior art keywords
niobium
thin layers
superconducting thin
wave resonance
heavy ions
Prior art date
Application number
AT92830445T
Other languages
English (en)
Inventor
Vincenzo Palmieri
Renato Preciso
Vladimir L Ruzinov
Original Assignee
Ist Nazionale Fisica Nucleare
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ist Nazionale Fisica Nucleare filed Critical Ist Nazionale Fisica Nucleare
Application granted granted Critical
Publication of ATE169062T1 publication Critical patent/ATE169062T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H05H7/20—Cavities; Resonators with superconductive walls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/866—Wave transmission line, network, waveguide, or microwave storage device

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT92830445T 1991-08-14 1992-08-12 Verfahren und vorrichtung zum sputtern supraleitender dünnschichten aus niob auf kupferne viertelwellen-resonanzhohlräume zur beschleunigung schwerer ionen ATE169062T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITRM910616A IT1249440B (it) 1991-08-14 1991-08-14 Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti.

Publications (1)

Publication Number Publication Date
ATE169062T1 true ATE169062T1 (de) 1998-08-15

Family

ID=11400319

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92830445T ATE169062T1 (de) 1991-08-14 1992-08-12 Verfahren und vorrichtung zum sputtern supraleitender dünnschichten aus niob auf kupferne viertelwellen-resonanzhohlräume zur beschleunigung schwerer ionen

Country Status (6)

Country Link
US (1) US5306406A (de)
EP (1) EP0527713B1 (de)
JP (2) JPH05202465A (de)
AT (1) ATE169062T1 (de)
DE (1) DE69226407T2 (de)
IT (1) IT1249440B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69310722T2 (de) * 1993-06-14 1997-09-11 Istituto Nazionale Di Fisica N Herstellungsverfahren von nahtloser Radiofrequenz-Resonanzholräumen und dadurch erhaltenes Produkt
DE19921000A1 (de) * 1999-05-06 2000-11-09 Ald Vacuum Techn Ag Verfahren und Vorrichtung zum Bearbeiten von Werkstücken aus hochreinem Metall
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US20060225817A1 (en) * 2005-04-11 2006-10-12 Konstantin Chuntonov Gas sorbents on the basis of intermetallic compounds and a method for producing the same
US7151347B1 (en) * 2005-06-28 2006-12-19 Jefferson Science Associates Llc Passivated niobium cavities
US8852959B2 (en) 2011-12-19 2014-10-07 Northrup Grumman Systems Corporation Low temperature resistor for superconductor circuits
CN104611677B (zh) * 2015-01-28 2018-01-19 西安交通大学 一种层界面结构可控的CuNb/Cu纳米合金薄膜制备方法
US11202362B1 (en) 2018-02-15 2021-12-14 Christopher Mark Rey Superconducting resonant frequency cavities, related components, and fabrication methods thereof
CN121299427B (zh) * 2025-12-10 2026-03-13 中国科学技术大学 用于超导微波复用器件检测的信号读出系统及方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904362A (en) * 1987-07-24 1990-02-27 Miba Gleitlager Aktiengesellschaft Bar-shaped magnetron or sputter cathode arrangement

Also Published As

Publication number Publication date
JP2004003032A (ja) 2004-01-08
IT1249440B (it) 1995-02-23
ITRM910616A1 (it) 1993-02-14
EP0527713A2 (de) 1993-02-17
ITRM910616A0 (it) 1991-08-14
DE69226407D1 (de) 1998-09-03
EP0527713A3 (de) 1995-10-25
DE69226407T2 (de) 1999-02-04
JPH05202465A (ja) 1993-08-10
EP0527713B1 (de) 1998-07-29
US5306406A (en) 1994-04-26

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee