ATE174156T1 - Licht emittierende vorrichtung und verfahren zu ihrer herstellung - Google Patents

Licht emittierende vorrichtung und verfahren zu ihrer herstellung

Info

Publication number
ATE174156T1
ATE174156T1 AT94104882T AT94104882T ATE174156T1 AT E174156 T1 ATE174156 T1 AT E174156T1 AT 94104882 T AT94104882 T AT 94104882T AT 94104882 T AT94104882 T AT 94104882T AT E174156 T1 ATE174156 T1 AT E174156T1
Authority
AT
Austria
Prior art keywords
light emitting
emitting device
producing same
region
luminous
Prior art date
Application number
AT94104882T
Other languages
English (en)
Inventor
Hideya Kumomi
Takao Yonehara
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE174156T1 publication Critical patent/ATE174156T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials

Landscapes

  • Led Devices (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
AT94104882T 1993-03-29 1994-03-28 Licht emittierende vorrichtung und verfahren zu ihrer herstellung ATE174156T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6993893 1993-03-29
JP4902294A JPH06338631A (ja) 1993-03-29 1994-03-18 発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
ATE174156T1 true ATE174156T1 (de) 1998-12-15

Family

ID=26389374

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94104882T ATE174156T1 (de) 1993-03-29 1994-03-28 Licht emittierende vorrichtung und verfahren zu ihrer herstellung

Country Status (5)

Country Link
US (1) US5726464A (de)
EP (1) EP0618624B1 (de)
JP (1) JPH06338631A (de)
AT (1) ATE174156T1 (de)
DE (1) DE69414898T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
GB2299204A (en) * 1995-03-20 1996-09-25 Secr Defence Electroluminescent device
CN1132223C (zh) 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
JP3413090B2 (ja) 1997-12-26 2003-06-03 キヤノン株式会社 陽極化成装置及び陽極化成処理方法
JP2002503825A (ja) * 1998-02-10 2002-02-05 インフィネオン テクノロジース アクチエンゲゼルシャフト 光学構造体および光学構造体を製造するための方法
US6455344B1 (en) * 1998-05-19 2002-09-24 National Science Council Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector
KR100338140B1 (ko) 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
JP2000277478A (ja) 1999-03-25 2000-10-06 Canon Inc 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6468923B1 (en) 1999-03-26 2002-10-22 Canon Kabushiki Kaisha Method of producing semiconductor member
EP1520591B1 (de) * 2002-07-11 2012-06-20 Sumitomo Electric Industries, Ltd. Poröser halbleiter und zugehöriges herstellungsverfahren
JP4438049B2 (ja) * 2003-08-11 2010-03-24 キヤノン株式会社 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法
US7294323B2 (en) * 2004-02-13 2007-11-13 Battelle Energy Alliance, Llc Method of producing a chemical hydride
US7112455B2 (en) 2004-06-10 2006-09-26 Freescale Semiconductor, Inc Semiconductor optical devices and method for forming
US7514859B2 (en) * 2004-12-20 2009-04-07 Hewlett-Packard Development Company, L.P. Ultraviolet emitter display apparatus
JP5110803B2 (ja) * 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
JP5003013B2 (ja) * 2006-04-25 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
JP4920342B2 (ja) * 2006-08-24 2012-04-18 浜松ホトニクス株式会社 シリコン素子の製造方法
JP4920343B2 (ja) * 2006-08-24 2012-04-18 浜松ホトニクス株式会社 半導体素子
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering
US8260098B1 (en) * 2011-02-17 2012-09-04 Nxp B.V. Optocoupler circuit
ITUB20152264A1 (it) * 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione
FR3118300B1 (fr) * 2020-12-23 2022-12-09 Univ Aix Marseille Detecteur de particules comprenant une region poreuse realisee dans un materiau semi-conducteur et procede de fabrication associe

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
DE4231310C1 (de) * 1992-09-18 1994-03-24 Siemens Ag Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5324965A (en) * 1993-03-26 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Light emitting diode with electro-chemically etched porous silicon

Also Published As

Publication number Publication date
EP0618624B1 (de) 1998-12-02
JPH06338631A (ja) 1994-12-06
EP0618624A2 (de) 1994-10-05
DE69414898D1 (de) 1999-01-14
DE69414898T2 (de) 1999-06-10
US5726464A (en) 1998-03-10
EP0618624A3 (de) 1995-05-31

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