ATE180023T1 - Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen - Google Patents

Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen

Info

Publication number
ATE180023T1
ATE180023T1 AT95942476T AT95942476T ATE180023T1 AT E180023 T1 ATE180023 T1 AT E180023T1 AT 95942476 T AT95942476 T AT 95942476T AT 95942476 T AT95942476 T AT 95942476T AT E180023 T1 ATE180023 T1 AT E180023T1
Authority
AT
Austria
Prior art keywords
epitaxial layer
silicon
silicon carbide
silicon carbid
micropipe defects
Prior art date
Application number
AT95942476T
Other languages
English (en)
Inventor
Vladimir A Dmitriev
Svetlana V Rendakova
Vladimir A Ivantsov
Calvin H Carter Jr
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23360251&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE180023(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Research Inc filed Critical Cree Research Inc
Application granted granted Critical
Publication of ATE180023T1 publication Critical patent/ATE180023T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Artificial Fish Reefs (AREA)
  • Farming Of Fish And Shellfish (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
AT95942476T 1994-11-30 1995-11-22 Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen ATE180023T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/346,618 US5679153A (en) 1994-11-30 1994-11-30 Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures

Publications (1)

Publication Number Publication Date
ATE180023T1 true ATE180023T1 (de) 1999-05-15

Family

ID=23360251

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95942476T ATE180023T1 (de) 1994-11-30 1995-11-22 Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen

Country Status (11)

Country Link
US (1) US5679153A (de)
EP (1) EP0795049B2 (de)
JP (2) JP4065021B2 (de)
KR (1) KR100420182B1 (de)
CN (1) CN1069935C (de)
AT (1) ATE180023T1 (de)
AU (1) AU4369196A (de)
CA (1) CA2205918C (de)
DE (1) DE69509678T3 (de)
RU (1) RU2142027C1 (de)
WO (1) WO1996017112A1 (de)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4086936B2 (ja) * 1996-10-03 2008-05-14 株式会社ブリヂストン ダミーウェハ
EP1014455B1 (de) 1997-07-25 2006-07-12 Nichia Corporation Halbleitervorrichtung aus einer nitridverbindung
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
JP3414321B2 (ja) 1998-05-29 2003-06-09 株式会社デンソー 炭化珪素単結晶の製造方法
DE69916177T2 (de) * 1998-05-29 2005-04-14 Denso Corp., Kariya Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (en) 1999-03-04 2000-09-08 Nichia Corporation Nitride semiconductor laser element
EP1200651B1 (de) 1999-07-07 2004-04-07 Siemens Aktiengesellschaft Keimkristallhalter mit seitlicher einfassung eines sic-keimkristalls
AU2001245270A1 (en) 2000-02-15 2001-09-03 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20020163059A1 (en) * 2000-02-17 2002-11-07 Hamerski Roman J. Device with epitaxial base
US6448581B1 (en) * 2000-08-08 2002-09-10 Agere Systems Guardian Corp. Mitigation of deleterious effects of micropipes in silicon carbide devices
JP4716558B2 (ja) 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置
US6863728B2 (en) * 2001-02-14 2005-03-08 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US20020187427A1 (en) * 2001-05-18 2002-12-12 Ulrich Fiebag Additive composition for both rinse water recycling in water recycling systems and simultaneous surface treatment of lithographic printing plates
WO2002099169A1 (fr) * 2001-06-04 2002-12-12 The New Industry Research Organization Carbure de silicium monocristal et son procede de production
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US7061161B2 (en) * 2002-02-15 2006-06-13 Siemens Technology-To-Business Center Llc Small piezoelectric air pumps with unobstructed airflow
KR100984261B1 (ko) 2002-03-19 2010-09-30 자이단호징 덴료쿠추오켄큐쇼 SiC 결정의 제조 방법 및 SiC 결정
US7379203B2 (en) * 2002-03-22 2008-05-27 Laser Substrates, Inc. Data capture during print process
JP2003327497A (ja) * 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
WO2004102686A1 (en) * 2003-05-09 2004-11-25 Cree, Inc. Led fabrication via ion implant isolation
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US9708735B2 (en) 2005-06-23 2017-07-18 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US8771552B2 (en) * 2005-06-23 2014-07-08 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
JP4277826B2 (ja) 2005-06-23 2009-06-10 住友電気工業株式会社 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
JP5141072B2 (ja) 2006-04-25 2013-02-13 日本精工株式会社 軸受ユニット用外輪の製造方法
CN101536168A (zh) * 2006-09-14 2009-09-16 科锐有限公司 无微管碳化硅及其相关制备方法
JP4811354B2 (ja) * 2007-06-11 2011-11-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5130468B2 (ja) * 2007-07-26 2013-01-30 株式会社エコトロン ＳｉＣエピタキシャル基板の製造方法
JP5000424B2 (ja) * 2007-08-10 2012-08-15 一般財団法人電力中央研究所 炭化珪素単結晶ウェハの欠陥検出方法、及び炭化珪素半導体素子の製造方法
US8163086B2 (en) * 2007-08-29 2012-04-24 Cree, Inc. Halogen assisted physical vapor transport method for silicon carbide growth
JP2009256193A (ja) * 2008-03-21 2009-11-05 Bridgestone Corp 炭化ケイ素単結晶の製造方法
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US8536582B2 (en) 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
DE112009003667B4 (de) * 2008-12-08 2024-04-25 Ii-Vi Inc. Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US9464366B2 (en) * 2009-08-20 2016-10-11 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC
JP5875143B2 (ja) 2011-08-26 2016-03-02 学校法人関西学院 半導体ウエハの製造方法
US10428440B2 (en) 2012-04-20 2019-10-01 Toyota Jidosha Kabushiki Kaisha SiC single crystal and production method thereof
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN105008598B (zh) * 2013-07-09 2018-01-19 富士电机株式会社 碳化硅半导体装置的制造方法以及碳化硅半导体装置
US9508611B2 (en) * 2013-08-14 2016-11-29 Hitachi, Ltd. Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
JP5741652B2 (ja) * 2013-08-30 2015-07-01 トヨタ自動車株式会社 ｎ型ＳｉＣ単結晶及びその製造方法
JP5854013B2 (ja) 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP2015061001A (ja) * 2013-09-20 2015-03-30 株式会社東芝 半導体装置の製造方法
CN103590101B (zh) * 2013-11-06 2016-02-24 山东大学 一种降低大尺寸高质量SiC单晶中微管密度的生长方法
JP2015151278A (ja) * 2014-02-10 2015-08-24 新日鐵住金株式会社 単結晶の製造方法、シードシャフト、および単結晶の製造装置
JP6028754B2 (ja) * 2014-03-11 2016-11-16 トヨタ自動車株式会社 ＳｉＣ単結晶基板の製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN105140111A (zh) * 2015-08-11 2015-12-09 中国科学院半导体研究所 消除碳化硅外延面穿通缺陷的方法
DE112016004600B4 (de) * 2015-10-07 2025-10-23 Sumitomo Electric Industries, Ltd. Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
EP3450595B1 (de) 2016-04-28 2021-07-14 Kwansei Gakuin Educational Foundation Epitaktisches wachstumsverfahren in der dampfphase und verfahren zur herstellung eines substrats mit der epitaxialschicht
CN106048716A (zh) * 2016-06-30 2016-10-26 山东天岳先进材料科技有限公司 一种碳化硅衬底的优化方法
CN106012021B (zh) * 2016-06-30 2019-04-12 山东天岳先进材料科技有限公司 一种液相生长碳化硅的籽晶轴及方法
US11293115B2 (en) * 2016-08-31 2022-04-05 Showa Denko K.K. Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
CN111235633A (zh) * 2020-01-16 2020-06-05 中国科学院半导体研究所 一种在硅熔体表面通过cvd制备自支撑碳化硅晶圆的方法
CN112048769B (zh) * 2020-07-24 2021-08-31 山东天岳先进科技股份有限公司 一种碳化硅晶体微管愈合用装置及应用
CN111962157B (zh) * 2020-07-24 2021-09-28 山东天岳先进科技股份有限公司 一种碳化硅晶体微管的愈合方法及碳化硅产品和应用
JP2022177484A (ja) * 2021-05-18 2022-12-01 住友電気工業株式会社 炭化珪素エピタキシャル基板の検査方法、炭化珪素エピタキシャル基板の製造方法および基板セット
CN115910755A (zh) * 2023-01-09 2023-04-04 宁波合盛新材料有限公司 一种碳化硅外延片及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123571A (en) * 1977-09-08 1978-10-31 International Business Machines Corporation Method for forming smooth self limiting and pin hole free SiC films on Si
US4419336A (en) * 1982-03-29 1983-12-06 Norton Company Silicon carbide production and furnace
JPS63156095A (ja) * 1986-12-19 1988-06-29 Sanyo Electric Co Ltd ＳｉＣ単結晶の液相エピタキシヤル成長方法
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4912064A (en) * 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
SU1590484A1 (ru) * 1988-10-03 1990-09-07 Физико-технический институт им.А.Ф.Иоффе Способ определени скорости роста эпитаксиального сло S @ С
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
SU1663060A1 (ru) * 1989-04-25 1991-07-15 Vladimir N Rybkin Способ выращивания кристаллов карбида кремния и устройство для его осуществления
SU1726571A1 (ru) * 1990-06-12 1992-04-15 Физико-технический институт им.А.Ф.Иоффе АН СССР Способ выращивани карбидкремниевых р-п-структур политипа 6Н
JP2579561B2 (ja) * 1991-03-22 1997-02-05 東海カーボン株式会社 ＳｉＣウイスカーの製造装置
JP3214868B2 (ja) * 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung

Also Published As

Publication number Publication date
EP0795049B2 (de) 2007-09-12
US5679153A (en) 1997-10-21
EP0795049A1 (de) 1997-09-17
JP4065021B2 (ja) 2008-03-19
RU2142027C1 (ru) 1999-11-27
EP0795049B1 (de) 1999-05-12
AU4369196A (en) 1996-06-19
DE69509678T2 (de) 1999-12-02
CN1167511A (zh) 1997-12-10
CA2205918C (en) 2002-01-29
CN1069935C (zh) 2001-08-22
JP2007091589A (ja) 2007-04-12
CA2205918A1 (en) 1996-06-06
WO1996017112A1 (en) 1996-06-06
DE69509678T3 (de) 2008-02-28
DE69509678D1 (de) 1999-06-17
JP4414992B2 (ja) 2010-02-17
JPH10509943A (ja) 1998-09-29
KR100420182B1 (ko) 2004-05-27

Similar Documents

Publication Publication Date Title
ATE180023T1 (de) Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen
RU97110653A (ru) Способ уменьшения образования микротрубочек при эпитаксиальном росте карбида кремния и получающихся в результате структур карбида кремния
ATE425279T1 (de) Wachstum von aluminium-einkristallen
EP0969499A3 (de) Kristallzüchtungsverfahren für ein Halbleiterbauelement
GB1336672A (en) Methods of epitaxially depositing a semiconductor compound
MY133116A (en) Process for preparing defect free silicon crystals which allows for variability in process conditions
KR950020969A (ko) V-홈을 이용한 이종접합 구조의 박막 제조방법
DE69114162D1 (de) Verfahren zum Züchten eines Kristalls.
JPS53147700A (en) Method of producing silicon carbide substrate
KR940014929A (ko) 다공성 실리콘기판 위에 갈륨비소를 성장하는 방법
JPS59225516A (ja) 半導体装置の製法
JPS55104998A (en) Production of silicon carbide crystal layer
JP3060486B2 (ja) Ｓｏｉ基板の形成方法
JPS56149399A (en) Liquid phase epitaxial growing method
JPS52115171A (en) Liquid phase epitaxial growing method
JPS6439713A (en) Epitaxial crystal growing method
KR930013221A (ko) 다결정실리콘의 결정성장법
JPS5696883A (en) Manufacture of silicon carbide diode
JPS52146556A (en) Silicon crystal growth method
JPS6421074A (en) Method for selectively growing thin metallic film
Kawase et al. Low-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method
JP2556159B2 (ja) 半導体結晶の製造方法
JP2964547B2 (ja) Ｓｏｉ基板の形成方法
JPS5663899A (en) Growing method of artificial rock crystal
JPS5232669A (en) Liquid-phase epitaxial growth method

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties