ATE180067T1 - Schaltungsanordnung zur basisvorspannungsversorgung von stromquellentransistoren in bipolar-ic- schaltungen - Google Patents

Schaltungsanordnung zur basisvorspannungsversorgung von stromquellentransistoren in bipolar-ic- schaltungen

Info

Publication number
ATE180067T1
ATE180067T1 AT96924768T AT96924768T ATE180067T1 AT E180067 T1 ATE180067 T1 AT E180067T1 AT 96924768 T AT96924768 T AT 96924768T AT 96924768 T AT96924768 T AT 96924768T AT E180067 T1 ATE180067 T1 AT E180067T1
Authority
AT
Austria
Prior art keywords
resistance
current source
source transistors
bias voltage
base bias
Prior art date
Application number
AT96924768T
Other languages
English (en)
Inventor
Reinhold Unterricker
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of ATE180067T1 publication Critical patent/ATE180067T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
AT96924768T 1995-08-01 1996-07-24 Schaltungsanordnung zur basisvorspannungsversorgung von stromquellentransistoren in bipolar-ic- schaltungen ATE180067T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19528209A DE19528209C1 (de) 1995-08-01 1995-08-01 Schaltungsanordnung zur Basisvorspannungsversorgung von Stromquellentransistoren in Bipolar-IC-Schaltungen

Publications (1)

Publication Number Publication Date
ATE180067T1 true ATE180067T1 (de) 1999-05-15

Family

ID=7768399

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96924768T ATE180067T1 (de) 1995-08-01 1996-07-24 Schaltungsanordnung zur basisvorspannungsversorgung von stromquellentransistoren in bipolar-ic- schaltungen

Country Status (6)

Country Link
EP (1) EP0842461B1 (de)
AT (1) ATE180067T1 (de)
CA (1) CA2228387A1 (de)
DE (2) DE19528209C1 (de)
ES (1) ES2134629T3 (de)
WO (1) WO1997005537A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103905028B (zh) * 2012-12-25 2018-05-25 中芯国际集成电路制造(上海)有限公司 信号接收器和信号传输设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2533199C3 (de) * 1975-07-24 1981-08-20 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Erzeugung einer von Änderungen der Versorgungsspannung unabhängigen Hilfsspannung
DE2849153C2 (de) * 1978-11-13 1982-08-19 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Erzeugung einer konstanten Hilfsgleichspannung
DE2849231C3 (de) * 1978-11-13 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Kompensation des Innenwiderstands einer durch einen Emitterfolger gebildeten Spannungsquelle
DE3213838A1 (de) * 1982-04-15 1983-10-27 Philips Patentverwaltung Gmbh, 2000 Hamburg Integrierte schaltungsanordung mit einem spannungs-strom-wandler
US4808908A (en) * 1988-02-16 1989-02-28 Analog Devices, Inc. Curvature correction of bipolar bandgap references
KR920010633A (ko) * 1990-11-30 1992-06-26 김광호 반도체 메모리 장치의 기준전압 발생회로
US5291122A (en) * 1992-06-11 1994-03-01 Analog Devices, Inc. Bandgap voltage reference circuit and method with low TCR resistor in parallel with high TCR and in series with low TCR portions of tail resistor

Also Published As

Publication number Publication date
EP0842461A1 (de) 1998-05-20
EP0842461B1 (de) 1999-05-12
DE59601894D1 (de) 1999-06-17
WO1997005537A1 (de) 1997-02-13
DE19528209C1 (de) 1996-08-29
CA2228387A1 (en) 1997-02-13
ES2134629T3 (es) 1999-10-01

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Legal Events

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