ATE181637T1 - Plasmareaktoren zur halbleiterscheibenbehandlung - Google Patents
Plasmareaktoren zur halbleiterscheibenbehandlungInfo
- Publication number
- ATE181637T1 ATE181637T1 AT95307268T AT95307268T ATE181637T1 AT E181637 T1 ATE181637 T1 AT E181637T1 AT 95307268 T AT95307268 T AT 95307268T AT 95307268 T AT95307268 T AT 95307268T AT E181637 T1 ATE181637 T1 AT E181637T1
- Authority
- AT
- Austria
- Prior art keywords
- windings
- spiral
- vacuum chamber
- winding
- image
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004804 winding Methods 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 2
- 238000009616 inductively coupled plasma Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33256994A | 1994-10-31 | 1994-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE181637T1 true ATE181637T1 (de) | 1999-07-15 |
Family
ID=23298820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT95307268T ATE181637T1 (de) | 1994-10-31 | 1995-10-13 | Plasmareaktoren zur halbleiterscheibenbehandlung |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6297468B1 (de) |
| EP (1) | EP0710055B1 (de) |
| JP (1) | JPH08227878A (de) |
| KR (1) | KR100362455B1 (de) |
| AT (1) | ATE181637T1 (de) |
| DE (1) | DE69510427T2 (de) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6074512A (en) | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
| US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6036877A (en) | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US5919382A (en) * | 1994-10-31 | 1999-07-06 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
| US6270617B1 (en) * | 1995-02-15 | 2001-08-07 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| US5874704A (en) | 1995-06-30 | 1999-02-23 | Lam Research Corporation | Low inductance large area coil for an inductively coupled plasma source |
| TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
| DE19548657C2 (de) * | 1995-12-17 | 2003-10-09 | Fraunhofer Ges Forschung | Vorrichtung zur großflächigen Plasmaerzeugung |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US6036878A (en) | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| US5669975A (en) * | 1996-03-27 | 1997-09-23 | Sony Corporation | Plasma producing method and apparatus including an inductively-coupled plasma source |
| US5800619A (en) * | 1996-06-10 | 1998-09-01 | Lam Research Corporation | Vacuum plasma processor having coil with minimum magnetic field in its center |
| CA2207154A1 (en) * | 1996-06-10 | 1997-12-10 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5759280A (en) * | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| TW349234B (en) * | 1996-07-15 | 1999-01-01 | Applied Materials Inc | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| US6534922B2 (en) | 1996-09-27 | 2003-03-18 | Surface Technology Systems, Plc | Plasma processing apparatus |
| EP0838839B1 (de) | 1996-09-27 | 2008-05-21 | Surface Technology Systems Plc | Plasmabearbeitungsgerät |
| JP4107596B2 (ja) * | 1996-10-02 | 2008-06-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5800621A (en) * | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
| US6652717B1 (en) * | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6373022B2 (en) | 1997-06-30 | 2002-04-16 | Applied Materials, Inc. | Plasma reactor with antenna of coil conductors of concentric helices offset along the axis of symmetry |
| US6028395A (en) * | 1997-09-16 | 2000-02-22 | Lam Research Corporation | Vacuum plasma processor having coil with added conducting segments to its peripheral part |
| US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
| US6028285A (en) * | 1997-11-19 | 2000-02-22 | Board Of Regents, The University Of Texas System | High density plasma source for semiconductor processing |
| US6965506B2 (en) | 1998-09-30 | 2005-11-15 | Lam Research Corporation | System and method for dechucking a workpiece from an electrostatic chuck |
| US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
| US6409933B1 (en) | 2000-07-06 | 2002-06-25 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
| JP5160717B2 (ja) * | 2000-07-06 | 2013-03-13 | アプライド マテリアルズ インコーポレイテッド | 対称的な並列導体のコイルアンテナを有するプラズマリアクタ |
| US6462481B1 (en) | 2000-07-06 | 2002-10-08 | Applied Materials Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
| US6685798B1 (en) | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
| US6414648B1 (en) | 2000-07-06 | 2002-07-02 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
| US6694915B1 (en) | 2000-07-06 | 2004-02-24 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
| RU2196395C1 (ru) * | 2001-05-30 | 2003-01-10 | Александров Андрей Федорович | Плазменный реактор и устройство для генерации плазмы (варианты) |
| KR100476902B1 (ko) * | 2001-07-20 | 2005-03-17 | 주식회사 셈테크놀러지 | 균일 분포 플라즈마를 형성하는 대면적 플라즈마안테나(lapa)및 이를 포함하는 플라즈마 발생장치 |
| US7571697B2 (en) * | 2001-09-14 | 2009-08-11 | Lam Research Corporation | Plasma processor coil |
| US6737358B2 (en) | 2002-02-13 | 2004-05-18 | Intel Corporation | Plasma etching uniformity control |
| KR100469889B1 (ko) * | 2002-11-14 | 2005-02-02 | 어댑티브프라즈마테크놀로지 주식회사 | 복수개의 코일들을 포함하는 플라즈마 식각 설비 |
| JP2003282547A (ja) * | 2002-03-26 | 2003-10-03 | Ulvac Japan Ltd | 高選択比かつ大面積高均一プラズマ処理方法及び装置 |
| JP4302630B2 (ja) * | 2002-07-26 | 2009-07-29 | プラズマート カンパニー リミテッド | 誘導結合型プラズマ発生装置 |
| KR100486712B1 (ko) | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
| KR100486724B1 (ko) * | 2002-10-15 | 2005-05-03 | 삼성전자주식회사 | 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
| US7871490B2 (en) * | 2003-03-18 | 2011-01-18 | Top Engineering Co., Ltd. | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution |
| KR100716720B1 (ko) | 2004-10-13 | 2007-05-09 | 에이피티씨 주식회사 | 비원형의 플라즈마 소스코일 |
| US8187416B2 (en) * | 2005-05-20 | 2012-05-29 | Applied Materials, Inc. | Interior antenna for substrate processing chamber |
| KR100777635B1 (ko) * | 2006-01-17 | 2007-11-21 | (주)아이씨디 | 평판 타입 고밀도 icp 안테나 |
| EP2087778A4 (de) | 2006-08-22 | 2010-11-17 | Mattson Tech Inc | Induktive plasmaquelle mit hohem koppelwirkungsgrad |
| US8992725B2 (en) * | 2006-08-28 | 2015-03-31 | Mattson Technology, Inc. | Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil |
| KR101069384B1 (ko) * | 2008-11-14 | 2011-09-30 | 세메스 주식회사 | 플라즈마 안테나 및 이를 포함하는 플라즈마 처리 장치 |
| JP5400434B2 (ja) | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| JP4621287B2 (ja) | 2009-03-11 | 2011-01-26 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| RU2441354C1 (ru) * | 2010-06-17 | 2012-01-27 | Государственное образовательное учреждение высшего профессионального образования "Северо-Кавказский государственный технический университет" | Генератор плазмы |
| TWI559819B (zh) | 2010-09-10 | 2016-11-21 | Emd Corp | Plasma processing device |
| JP5977986B2 (ja) * | 2011-11-08 | 2016-08-24 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
| KR101310851B1 (ko) * | 2011-11-08 | 2013-09-25 | 가부시키가이샤 히다치 하이테크놀로지즈 | 열처리 장치 |
| US9301383B2 (en) | 2012-03-30 | 2016-03-29 | Tokyo Electron Limited | Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus |
| US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
| US9748640B2 (en) * | 2013-06-26 | 2017-08-29 | Southwest Research Institute | Helix-loaded meandered loxodromic spiral antenna |
| US9677176B2 (en) * | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
| DE102013114093A1 (de) | 2013-12-16 | 2015-06-18 | Sentech Instruments Gmbh | Plasmaquelle und Verfahren zur Erzeugung eines Plasmas |
| JP5800937B2 (ja) * | 2014-03-14 | 2015-10-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| KR101848908B1 (ko) * | 2016-09-19 | 2018-05-15 | 인베니아 주식회사 | 유도 결합 플라즈마 처리 장치 |
| US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
| US11521828B2 (en) | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
| CN111433902A (zh) | 2017-12-08 | 2020-07-17 | 朗姆研究公司 | 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头 |
| JP7061264B2 (ja) * | 2018-03-20 | 2022-04-28 | 日新電機株式会社 | プラズマ制御システム及びプラズマ制御システム用プログラム |
| EP3772190B1 (de) * | 2019-07-30 | 2023-03-08 | Panasonic Intellectual Property Management Co., Ltd. | Kommunikationsvorrichtung und antenne |
| US11217881B1 (en) * | 2019-11-05 | 2022-01-04 | Lockheed Martin Corporation | Spiral antenna with coiled walls |
| WO2022146648A1 (en) | 2020-12-28 | 2022-07-07 | Mattson Technology, Inc. | Induction coil assembly for plasma processing apparatus |
| US12074390B2 (en) | 2022-11-11 | 2024-08-27 | Tokyo Electron Limited | Parallel resonance antenna for radial plasma control |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3731047A (en) * | 1971-12-06 | 1973-05-01 | Mc Donnell Douglas Corp | Plasma heating torch |
| KR900007687B1 (ko) | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
| GB8629634D0 (en) | 1986-12-11 | 1987-01-21 | Dobson C D | Reactive ion & sputter etching |
| US4842683A (en) | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
| DE3738352A1 (de) | 1987-11-11 | 1989-05-24 | Technics Plasma Gmbh | Filamentloses magnetron-ionenstrahlsystem |
| EP0379828B1 (de) | 1989-01-25 | 1995-09-27 | International Business Machines Corporation | Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung |
| GB8905075D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
| US5122251A (en) | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| DE69128345T2 (de) * | 1990-01-04 | 1998-03-26 | Mattson Tech Inc | Induktiver plasmareaktor im unteren hochfrequenzbereich |
| DE69118264T2 (de) * | 1990-07-24 | 1996-08-29 | Varian Australia | Spektroskopie mittels induktiv angekoppelten Plasmas |
| DE69224640T2 (de) | 1991-05-17 | 1998-10-01 | Lam Res Corp | VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT |
| KR100255703B1 (ko) | 1991-06-27 | 2000-05-01 | 조셉 제이. 스위니 | 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법 |
| US5234529A (en) | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
| EP0849766A3 (de) | 1992-01-24 | 1998-10-14 | Applied Materials, Inc. | Ätzverfahren |
| US5280154A (en) | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5277751A (en) | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
| US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| US5430355A (en) * | 1993-07-30 | 1995-07-04 | Texas Instruments Incorporated | RF induction plasma source for plasma processing |
| GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
| US5540824A (en) | 1994-07-18 | 1996-07-30 | Applied Materials | Plasma reactor with multi-section RF coil and isolated conducting lid |
| JP3105403B2 (ja) * | 1994-09-14 | 2000-10-30 | 松下電器産業株式会社 | プラズマ処理装置 |
-
1995
- 1995-10-13 EP EP95307268A patent/EP0710055B1/de not_active Expired - Lifetime
- 1995-10-13 AT AT95307268T patent/ATE181637T1/de not_active IP Right Cessation
- 1995-10-13 DE DE69510427T patent/DE69510427T2/de not_active Expired - Lifetime
- 1995-10-31 JP JP7283550A patent/JPH08227878A/ja not_active Withdrawn
- 1995-10-31 KR KR1019950038302A patent/KR100362455B1/ko not_active Expired - Lifetime
-
1997
- 1997-06-30 US US08/886,240 patent/US6297468B1/en not_active Expired - Lifetime
-
1999
- 1999-09-02 US US09/389,152 patent/US6291793B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08227878A (ja) | 1996-09-03 |
| EP0710055B1 (de) | 1999-06-23 |
| DE69510427T2 (de) | 1999-12-30 |
| DE69510427D1 (de) | 1999-07-29 |
| EP0710055A1 (de) | 1996-05-01 |
| US6291793B1 (en) | 2001-09-18 |
| KR100362455B1 (ko) | 2003-02-19 |
| US6297468B1 (en) | 2001-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |