ATE183020T1 - Verfahren zur herstellung integrierter schaltungsbauelemente - Google Patents

Verfahren zur herstellung integrierter schaltungsbauelemente

Info

Publication number
ATE183020T1
ATE183020T1 AT95906334T AT95906334T ATE183020T1 AT E183020 T1 ATE183020 T1 AT E183020T1 AT 95906334 T AT95906334 T AT 95906334T AT 95906334 T AT95906334 T AT 95906334T AT E183020 T1 ATE183020 T1 AT E183020T1
Authority
AT
Austria
Prior art keywords
integrated circuit
wafer
pct
circuit devices
integrated circuits
Prior art date
Application number
AT95906334T
Other languages
English (en)
Inventor
Pierre Badehi
Original Assignee
Shellcase Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shellcase Ltd filed Critical Shellcase Ltd
Application granted granted Critical
Publication of ATE183020T1 publication Critical patent/ATE183020T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes

Landscapes

  • Dicing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transmitters (AREA)
AT95906334T 1994-01-17 1995-01-10 Verfahren zur herstellung integrierter schaltungsbauelemente ATE183020T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL10835994A IL108359A (en) 1994-01-17 1994-01-17 Method and apparatus for producing integrated circuit devices

Publications (1)

Publication Number Publication Date
ATE183020T1 true ATE183020T1 (de) 1999-08-15

Family

ID=11065715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95906334T ATE183020T1 (de) 1994-01-17 1995-01-10 Verfahren zur herstellung integrierter schaltungsbauelemente

Country Status (13)

Country Link
US (1) US6040235A (de)
EP (1) EP0740852B1 (de)
JP (1) JPH09511097A (de)
AT (1) ATE183020T1 (de)
AU (1) AU1456495A (de)
CA (1) CA2181339A1 (de)
DE (1) DE69511241T2 (de)
IL (1) IL108359A (de)
MX (1) MX9602801A (de)
MY (1) MY130185A (de)
SG (1) SG50376A1 (de)
TW (1) TW360957B (de)
WO (1) WO1995019645A1 (de)

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and apparatus for producing integrated circuit devices
US6127245A (en) * 1997-02-04 2000-10-03 Micron Technology, Inc. Grinding technique for integrated circuits
US5789302A (en) * 1997-03-24 1998-08-04 Siemens Aktiengesellschaft Crack stops
DE19738549C1 (de) * 1997-09-03 1998-12-10 Siemens Ag Verpackte integrierte Schaltung
FR2771551B1 (fr) * 1997-11-21 2000-01-28 Ela Medical Sa Composant microelectromecanique, tel que microcapteur ou microactionneur, reportable sur un substrat de circuit hybride
US6624505B2 (en) 1998-02-06 2003-09-23 Shellcase, Ltd. Packaged integrated circuits and methods of producing thereof
IL123207A0 (en) * 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
EP0988650B1 (de) 1998-03-16 2006-12-20 Koninklijke Philips Electronics N.V. Herstellungsverfahren von halbleiteranordnungen als chip-size packung
US6235612B1 (en) * 1998-06-10 2001-05-22 Texas Instruments Incorporated Edge bond pads on integrated circuits
FR2783354B1 (fr) * 1998-08-25 2002-07-12 Commissariat Energie Atomique Procede collectif de conditionnement d'une pluralite de composants formes initialement dans un meme substrat
FR2782840B1 (fr) * 1998-08-25 2003-09-05 Commissariat Energie Atomique Circuit electronique et procede de realisation d'un circuit electronique integre comprenant au moins un composant electronique de puissance dans une plaque de substrat
US6187611B1 (en) 1998-10-23 2001-02-13 Microsemi Microwave Products, Inc. Monolithic surface mount semiconductor device and method for fabricating same
US7208725B2 (en) 1998-11-25 2007-04-24 Rohm And Haas Electronic Materials Llc Optoelectronic component with encapsulant
JP3429718B2 (ja) * 1999-10-28 2003-07-22 新光電気工業株式会社 表面実装用基板及び表面実装構造
IL133453A0 (en) 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
JP5231701B2 (ja) * 2000-02-15 2013-07-10 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射線を発する半導体デバイス及びその製造方法
DE20111659U1 (de) * 2000-05-23 2001-12-13 OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg Bauelement für die Optoelektronik
KR100855015B1 (ko) 2000-12-21 2008-08-28 테쎄라 테크놀로지스 헝가리 케이에프티. 패키징된 집적회로 및 그 제조 방법
US20020117753A1 (en) * 2001-02-23 2002-08-29 Lee Michael G. Three dimensional packaging
US7498196B2 (en) * 2001-03-30 2009-03-03 Megica Corporation Structure and manufacturing method of chip scale package
US6878608B2 (en) * 2001-05-31 2005-04-12 International Business Machines Corporation Method of manufacture of silicon based package
WO2002103792A2 (en) * 2001-06-19 2002-12-27 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device
US6856007B2 (en) 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
JP2003197569A (ja) * 2001-12-28 2003-07-11 Disco Abrasive Syst Ltd 半導体チップの製造方法
US6624003B1 (en) 2002-02-06 2003-09-23 Teravicta Technologies, Inc. Integrated MEMS device and package
US7591780B2 (en) * 2002-03-18 2009-09-22 Sterling Lc Miniaturized imaging device with integrated circuit connector system
US8614768B2 (en) * 2002-03-18 2013-12-24 Raytheon Company Miniaturized imaging device including GRIN lens optically coupled to SSID
US20060146172A1 (en) * 2002-03-18 2006-07-06 Jacobsen Stephen C Miniaturized utility device having integrated optical capabilities
US7787939B2 (en) * 2002-03-18 2010-08-31 Sterling Lc Miniaturized imaging device including utility aperture and SSID
KR20050007459A (ko) * 2002-04-16 2005-01-18 엑스룸 포토닉스 리미티드 통합 커넥터를 구비한 전자 광학 회로 및 그 제조 방법
US20040021214A1 (en) * 2002-04-16 2004-02-05 Avner Badehi Electro-optic integrated circuits with connectors and methods for the production thereof
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
US6908791B2 (en) * 2002-04-29 2005-06-21 Texas Instruments Incorporated MEMS device wafer-level package
US7340181B1 (en) * 2002-05-13 2008-03-04 National Semiconductor Corporation Electrical die contact structure and fabrication method
US7033664B2 (en) 2002-10-22 2006-04-25 Tessera Technologies Hungary Kft Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US7265045B2 (en) * 2002-10-24 2007-09-04 Megica Corporation Method for fabricating thermal compliant semiconductor chip wiring structure for chip scale packaging
JP4093018B2 (ja) * 2002-11-08 2008-05-28 沖電気工業株式会社 半導体装置及びその製造方法
JP2004165191A (ja) * 2002-11-08 2004-06-10 Oki Electric Ind Co Ltd 半導体装置、半導体装置の製造方法及びカメラシステム
US7067907B2 (en) * 2003-03-27 2006-06-27 Freescale Semiconductor, Inc. Semiconductor package having angulated interconnect surfaces
TWI225696B (en) * 2003-06-10 2004-12-21 Advanced Semiconductor Eng Semiconductor package and method for manufacturing the same
US6972480B2 (en) * 2003-06-16 2005-12-06 Shellcase Ltd. Methods and apparatus for packaging integrated circuit devices
WO2005004195A2 (en) 2003-07-03 2005-01-13 Shellcase Ltd. Method and apparatus for packaging integrated circuit devices
TWI226094B (en) * 2003-07-21 2005-01-01 Advanced Semiconductor Eng Process for testing IC wafer
CN101174572B (zh) * 2003-08-06 2010-12-15 三洋电机株式会社 半导体装置及其制造方法
JP4401181B2 (ja) * 2003-08-06 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
US7180149B2 (en) 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
US7612443B1 (en) 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
JP4248355B2 (ja) * 2003-09-24 2009-04-02 三洋電機株式会社 半導体装置および半導体装置の製造方法
TWI226090B (en) * 2003-09-26 2005-01-01 Advanced Semiconductor Eng Transparent packaging in wafer level
WO2005031861A1 (en) 2003-09-26 2005-04-07 Tessera, Inc. Structure and method of making capped chips including a flowable conductive medium
US6972243B2 (en) * 2003-09-30 2005-12-06 International Business Machines Corporation Fabrication of semiconductor dies with micro-pins and structures produced therewith
US6943423B2 (en) * 2003-10-01 2005-09-13 Optopac, Inc. Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof
US6864116B1 (en) 2003-10-01 2005-03-08 Optopac, Inc. Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
EP1676160A4 (de) * 2003-10-15 2008-04-09 Xloom Photonics Ltd Elektrooptische schaltkreise mit integriertem verbinder und verfahren zu ihrer herstellung
US20050156330A1 (en) * 2004-01-21 2005-07-21 Harris James M. Through-wafer contact to bonding pad
US20050196900A1 (en) * 2004-03-05 2005-09-08 Humphrey Alan E. Substrate protection system, device and method
US7122874B2 (en) * 2004-04-12 2006-10-17 Optopac, Inc. Electronic package having a sealing structure on predetermined area, and the method thereof
US6943424B1 (en) 2004-05-06 2005-09-13 Optopac, Inc. Electronic package having a patterned layer on backside of its substrate, and the fabrication thereof
US20070046314A1 (en) * 2004-07-21 2007-03-01 Advanced Semiconductor Engineering, Inc. Process for testing IC wafer
TWI250596B (en) 2004-07-23 2006-03-01 Ind Tech Res Inst Wafer-level chip scale packaging method
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
US20060043513A1 (en) * 2004-09-02 2006-03-02 Deok-Hoon Kim Method of making camera module in wafer level
KR100498708B1 (ko) * 2004-11-08 2005-07-01 옵토팩 주식회사 반도체 소자용 전자패키지 및 그 패키징 방법
FR2879183B1 (fr) * 2004-12-15 2007-04-27 Atmel Grenoble Soc Par Actions Procede de fabrication collective de microstructures a elements superposes
US7129459B2 (en) * 2004-12-23 2006-10-31 Avago Technologies General Ip (Singapore) Pte. Ltd. Wire-bondable image sensor having integral contaminant shadowing reduction structure
US20060138626A1 (en) * 2004-12-29 2006-06-29 Tessera, Inc. Microelectronic packages using a ceramic substrate having a window and a conductive surface region
TWI254467B (en) * 2005-03-01 2006-05-01 Advanced Semiconductor Eng Semiconductor package having an optical device and the method of making the same
US7285434B2 (en) * 2005-03-09 2007-10-23 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for manufacturing the same
US9059227B2 (en) 2005-06-18 2015-06-16 Futrfab, Inc. Methods and apparatus for vertically orienting substrate processing tools in a clean space
US9339900B2 (en) 2005-08-18 2016-05-17 Futrfab, Inc. Apparatus to support a cleanspace fabricator
US9159592B2 (en) 2005-06-18 2015-10-13 Futrfab, Inc. Method and apparatus for an automated tool handling system for a multilevel cleanspace fabricator
US7513822B2 (en) 2005-06-18 2009-04-07 Flitsch Frederick A Method and apparatus for a cleanspace fabricator
US11024527B2 (en) 2005-06-18 2021-06-01 Frederick A. Flitsch Methods and apparatus for novel fabricators with Cleanspace
US9457442B2 (en) * 2005-06-18 2016-10-04 Futrfab, Inc. Method and apparatus to support process tool modules in a cleanspace fabricator
US10651063B2 (en) 2005-06-18 2020-05-12 Frederick A. Flitsch Methods of prototyping and manufacturing with cleanspace fabricators
US10627809B2 (en) 2005-06-18 2020-04-21 Frederick A. Flitsch Multilevel fabricators
US20100078795A1 (en) * 2005-07-01 2010-04-01 Koninklijke Philips Electronics, N.V. Electronic device
US9601474B2 (en) 2005-07-22 2017-03-21 Invensas Corporation Electrically stackable semiconductor wafer and chip packages
US7566853B2 (en) * 2005-08-12 2009-07-28 Tessera, Inc. Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture
US7973380B2 (en) * 2005-11-23 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for providing metal extension in backside illuminated sensor for wafer level testing
JP2009517730A (ja) 2005-11-28 2009-04-30 エヌエックスピー ビー ヴィ トランスポンダ及びその製造方法
TWI324800B (en) * 2005-12-28 2010-05-11 Sanyo Electric Co Method for manufacturing semiconductor device
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
RU2422204C2 (ru) 2006-03-20 2011-06-27 Конинклейке Филипс Электроникс Н.В. Платформа система в корпусе для электронно-микрофлюидных устройств
US7361989B1 (en) * 2006-09-26 2008-04-22 International Business Machines Corporation Stacked imager package
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US8513789B2 (en) * 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US7759166B2 (en) * 2006-10-17 2010-07-20 Tessera, Inc. Microelectronic packages fabricated at the wafer level and methods therefor
TWI313050B (en) * 2006-10-18 2009-08-01 Advanced Semiconductor Eng Semiconductor chip package manufacturing method and structure thereof
US7952195B2 (en) * 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
TW200842998A (en) * 2007-04-18 2008-11-01 Siliconware Precision Industries Co Ltd Semiconductor device and manufacturing method thereof
TWI331371B (en) * 2007-04-19 2010-10-01 Siliconware Precision Industries Co Ltd Semiconductor device and manufacturing method thereof
US7835074B2 (en) * 2007-06-05 2010-11-16 Sterling Lc Mini-scope for multi-directional imaging
CN101809739B (zh) * 2007-07-27 2014-08-20 泰塞拉公司 具有后应用的衬垫延长部分的重构晶片堆封装
US8551815B2 (en) 2007-08-03 2013-10-08 Tessera, Inc. Stack packages using reconstituted wafers
US8043895B2 (en) * 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
US20090093137A1 (en) * 2007-10-08 2009-04-09 Xloom Communications, (Israel) Ltd. Optical communications module
US7969659B2 (en) * 2008-01-11 2011-06-28 Sterling Lc Grin lens microscope system
US7880293B2 (en) * 2008-03-25 2011-02-01 Stats Chippac, Ltd. Wafer integrated with permanent carrier and method therefor
US20090287048A1 (en) * 2008-05-16 2009-11-19 Sterling Lc Method and apparatus for imaging within a living body
EP2308087B1 (de) * 2008-06-16 2020-08-12 Tessera, Inc. Stapelung von kapselungen auf chipmassstab auf waferebene mit randkontakten
EP2299894B1 (de) 2008-06-18 2020-09-02 Sarcos LC Transparenter endoskopkopf zur definition einer brennweite
WO2010014792A2 (en) * 2008-07-30 2010-02-04 Sterling Lc Method and device for incremental wavelength variation to analyze tissue
WO2010053916A2 (en) 2008-11-04 2010-05-14 Sterling Lc Method and device for wavelength shifted imaging
CN102422412A (zh) * 2009-03-13 2012-04-18 德塞拉股份有限公司 具有穿过结合垫延伸的通路的堆叠式微电子组件
US8717428B2 (en) 2009-10-01 2014-05-06 Raytheon Company Light diffusion apparatus
US9144664B2 (en) 2009-10-01 2015-09-29 Sarcos Lc Method and apparatus for manipulating movement of a micro-catheter
WO2011041728A2 (en) 2009-10-01 2011-04-07 Jacobsen Stephen C Needle delivered imaging device
US8828028B2 (en) 2009-11-03 2014-09-09 Raytheon Company Suture device and method for closing a planar opening
US8624342B2 (en) 2010-11-05 2014-01-07 Invensas Corporation Rear-face illuminated solid state image sensors
US20140011323A1 (en) * 2012-07-06 2014-01-09 Frederick Flitsch Processes relating to cleanspace fabricators
US9620473B1 (en) 2013-01-18 2017-04-11 University Of Notre Dame Du Lac Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment
US20140326856A1 (en) * 2013-05-06 2014-11-06 Omnivision Technologies, Inc. Integrated circuit stack with low profile contacts
CN106469689B (zh) * 2015-08-21 2019-10-11 安世有限公司 电子元件及其形成方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1658509A (en) * 1925-10-07 1928-02-07 Wadsworth Watch Case Co Surface-ornamenting process and apparatus
US2507956A (en) * 1947-11-01 1950-05-16 Lithographic Technical Foundat Process of coating aluminum
NL83665C (de) * 1952-04-03
US2796370A (en) * 1955-03-04 1957-06-18 Charles W Ostrander Composition and method for producing corrosion resistant protective coating on aluminum and aluminum alloys
DE1591105A1 (de) * 1967-12-06 1970-09-24 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Festkoerperschaltungen
US3623961A (en) * 1968-01-12 1971-11-30 Philips Corp Method of providing an electric connection to a surface of an electronic device and device obtained by said method
US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
DE2341154C2 (de) * 1973-08-14 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung
JPS5895862A (ja) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp 積層構造半導体装置
WO1985002283A1 (en) * 1983-11-07 1985-05-23 Irvine Sensors Corporation Detector array module-structure and fabrication
GB8519373D0 (en) * 1985-08-01 1985-09-04 Unilever Plc Encapsulation of fet transducers
US4789692A (en) * 1986-08-12 1988-12-06 Morton Thiokol, Inc. Resin-immobilized biocides
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US4862249A (en) * 1987-04-17 1989-08-29 Xoc Devices, Inc. Packaging system for stacking integrated circuits
JPH0193149A (ja) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp 半導体装置
US4794092A (en) * 1987-11-18 1988-12-27 Grumman Aerospace Corporation Single wafer moated process
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
JPH0217644A (ja) * 1988-07-06 1990-01-22 Hitachi Ltd 集積回路
US5038201A (en) * 1988-11-08 1991-08-06 Westinghouse Electric Corp. Wafer scale integrated circuit apparatus
JP2829015B2 (ja) * 1989-01-19 1998-11-25 株式会社東芝 半導体素子の加工方法
US5135890A (en) * 1989-06-16 1992-08-04 General Electric Company Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
US4992908A (en) * 1989-07-24 1991-02-12 Grumman Aerospace Corporation Integrated circuit module
JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
US5126286A (en) * 1990-10-05 1992-06-30 Micron Technology, Inc. Method of manufacturing edge connected semiconductor die
FR2670323B1 (fr) * 1990-12-11 1997-12-12 Thomson Csf Procede et dispositif d'interconnexion de circuits integres en trois dimensions.
US5270485A (en) * 1991-01-28 1993-12-14 Sarcos Group High density, three-dimensional, intercoupled circuit structure
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
JP2967621B2 (ja) * 1991-08-27 1999-10-25 日本電気株式会社 半導体装置用パッケージの製造方法
JP2769753B2 (ja) * 1991-08-28 1998-06-25 株式会社オーク製作所 画像形成用露光装置
FR2691836B1 (fr) * 1992-05-27 1997-04-30 Ela Medical Sa Procede de fabrication d'un dispositif a semi-conducteurs comportant au moins une puce et dispositif correspondant.
US5269822A (en) * 1992-09-01 1993-12-14 Air Products And Chemicals, Inc. Process for recovering oxygen from gaseous mixtures containing water or carbon dioxide which process employs barium-containing ion transport membranes
AU2554192A (en) * 1992-09-14 1994-04-12 Pierre Badehi Methods and apparatus for producing integrated circuit devices
FR2707012B1 (de) * 1993-06-22 1995-09-29 Asulab Sa
US5376235A (en) * 1993-07-15 1994-12-27 Micron Semiconductor, Inc. Method to eliminate corrosion in conductive elements
IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and apparatus for producing integrated circuit devices

Also Published As

Publication number Publication date
EP0740852B1 (de) 1999-08-04
EP0740852A1 (de) 1996-11-06
DE69511241D1 (de) 1999-09-09
CA2181339A1 (en) 1995-07-20
WO1995019645A1 (en) 1995-07-20
JPH09511097A (ja) 1997-11-04
IL108359A (en) 2001-04-30
US6040235A (en) 2000-03-21
AU1456495A (en) 1995-08-01
TW360957B (en) 1999-06-11
MY130185A (en) 2007-06-29
MX9602801A (es) 1997-12-31
IL108359A0 (en) 1994-04-12
DE69511241T2 (de) 2000-04-20
SG50376A1 (en) 1998-07-20

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