ATE187845T1 - Verfahren zur isolierung von halbleiteranordnungen in einem substrat - Google Patents

Verfahren zur isolierung von halbleiteranordnungen in einem substrat

Info

Publication number
ATE187845T1
ATE187845T1 AT87302574T AT87302574T ATE187845T1 AT E187845 T1 ATE187845 T1 AT E187845T1 AT 87302574 T AT87302574 T AT 87302574T AT 87302574 T AT87302574 T AT 87302574T AT E187845 T1 ATE187845 T1 AT E187845T1
Authority
AT
Austria
Prior art keywords
substrate
regions
mask
mesa structures
epitaxial layer
Prior art date
Application number
AT87302574T
Other languages
English (en)
Inventor
Mammen Thomas
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE187845T1 publication Critical patent/ATE187845T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H10W10/0123—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves using auxiliary pillars in the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT87302574T 1986-03-27 1987-03-25 Verfahren zur isolierung von halbleiteranordnungen in einem substrat ATE187845T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/844,908 US4696095A (en) 1986-03-27 1986-03-27 Process for isolation using self-aligned diffusion process

Publications (1)

Publication Number Publication Date
ATE187845T1 true ATE187845T1 (de) 2000-01-15

Family

ID=25293937

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87302574T ATE187845T1 (de) 1986-03-27 1987-03-25 Verfahren zur isolierung von halbleiteranordnungen in einem substrat

Country Status (5)

Country Link
US (1) US4696095A (de)
EP (1) EP0239384B1 (de)
JP (1) JPS62232142A (de)
AT (1) ATE187845T1 (de)
DE (1) DE3752303D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362272A (ja) * 1986-09-02 1988-03-18 Seiko Instr & Electronics Ltd 半導体装置の製造方法
GB8905511D0 (en) * 1989-03-10 1989-04-19 British Telecomm Preparing substrates
US4948456A (en) * 1989-06-09 1990-08-14 Delco Electronics Corporation Confined lateral selective epitaxial growth
WO1996017379A1 (en) * 1994-11-28 1996-06-06 Advanced Micro Devices, Inc. A method and system for providing an integrated circuit device that allows for a high field threshold voltage utilizing oxide spacers
US5907768A (en) * 1996-08-16 1999-05-25 Kobe Steel Usa Inc. Methods for fabricating microelectronic structures including semiconductor islands
US5930644A (en) * 1997-07-23 1999-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a shallow trench isolation using oxide slope etching
US8501566B1 (en) * 2012-09-11 2013-08-06 Nanya Technology Corp. Method for fabricating a recessed channel access transistor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271583A (en) * 1980-03-10 1981-06-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor devices having planar recessed oxide isolation region
JPS5760851A (en) * 1980-09-17 1982-04-13 Hitachi Ltd Dielectric isolation of semiconductor integrated circuit
JPS58134443A (ja) * 1982-02-04 1983-08-10 Toshiba Corp 半導体装置の製造方法
JPS5984435A (ja) * 1982-11-04 1984-05-16 Matsushita Electric Ind Co Ltd 半導体集積回路及びその製造方法

Also Published As

Publication number Publication date
DE3752303D1 (de) 2000-01-20
EP0239384A2 (de) 1987-09-30
JPS62232142A (ja) 1987-10-12
US4696095A (en) 1987-09-29
EP0239384B1 (de) 1999-12-15
EP0239384A3 (de) 1992-01-22

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties