ATE189336T1 - Wahrnehmungsvorrichtung für die messung starker höhenunterschiedsverhältnisse - Google Patents

Wahrnehmungsvorrichtung für die messung starker höhenunterschiedsverhältnisse

Info

Publication number
ATE189336T1
ATE189336T1 AT94930746T AT94930746T ATE189336T1 AT E189336 T1 ATE189336 T1 AT E189336T1 AT 94930746 T AT94930746 T AT 94930746T AT 94930746 T AT94930746 T AT 94930746T AT E189336 T1 ATE189336 T1 AT E189336T1
Authority
AT
Austria
Prior art keywords
imaging
base
image
optimized
altitude
Prior art date
Application number
AT94930746T
Other languages
English (en)
Inventor
Guillermo L Toro-Lira
Alan H Achilles
Nolan V Frederick
Kevin M Monahan
Philip R Rigg
Original Assignee
Metrologix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metrologix Inc filed Critical Metrologix Inc
Application granted granted Critical
Publication of ATE189336T1 publication Critical patent/ATE189336T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2444—Electron Multiplier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Glass Compositions (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
AT94930746T 1993-10-26 1994-10-12 Wahrnehmungsvorrichtung für die messung starker höhenunterschiedsverhältnisse ATE189336T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/141,669 US5493116A (en) 1993-10-26 1993-10-26 Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
PCT/US1994/011602 WO1995012210A1 (en) 1993-10-26 1994-10-12 Detection system for measuring high aspect ratio

Publications (1)

Publication Number Publication Date
ATE189336T1 true ATE189336T1 (de) 2000-02-15

Family

ID=22496687

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94930746T ATE189336T1 (de) 1993-10-26 1994-10-12 Wahrnehmungsvorrichtung für die messung starker höhenunterschiedsverhältnisse

Country Status (8)

Country Link
US (1) US5493116A (de)
EP (1) EP0725975B1 (de)
JP (1) JP3456999B2 (de)
AT (1) ATE189336T1 (de)
AU (1) AU7977494A (de)
DE (1) DE69422825T2 (de)
IL (1) IL111384A (de)
WO (1) WO1995012210A1 (de)

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US5866904A (en) * 1990-10-12 1999-02-02 Hitachi, Ltd. Scanning electron microscope and method for dimension measuring by using the same
US6066849A (en) * 1997-01-16 2000-05-23 Kla Tencor Scanning electron beam microscope
EP1003429B1 (de) 1997-03-19 2008-09-24 Lucid, Inc. Zellchirurgie unter benutzung konfokaler mikroskopie
JPH1167139A (ja) * 1997-08-25 1999-03-09 Hitachi Ltd 走査電子顕微鏡
US6274393B1 (en) 1998-04-20 2001-08-14 International Business Machines Corporation Method for measuring submicron images
TW402769B (en) * 1998-06-13 2000-08-21 Samsung Electronics Co Ltd Apparatus and method for contact failure inspection in semiconductor devices
GB2341720A (en) * 1998-09-16 2000-03-22 Leica Microsys Lithography Ltd Electron beam aperture element with beam sheilding
US6539106B1 (en) 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6232787B1 (en) 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
US6344750B1 (en) 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
US6414308B1 (en) 1999-03-12 2002-07-02 International Business Machines Corporation Method for determining opened/unopened semiconductor contacts using a scanning electron microscope
KR100546289B1 (ko) 1999-04-23 2006-01-26 삼성전자주식회사 전자빔 검사 장치를 이용한 콘택홀의 인라인 모니터링 방법
US6586733B1 (en) 1999-05-25 2003-07-01 Kla-Tencor Apparatus and methods for secondary electron emission microscope with dual beam
US6545491B2 (en) 1999-08-27 2003-04-08 Samsung Electronics Co., Ltd. Apparatus for detecting defects in semiconductor devices and methods of using the same
US6642150B1 (en) 1999-12-28 2003-11-04 Taiwan Semiconductor Manufacturing Company Method for testing for blind hole formed in wafer layer
US6847038B2 (en) * 2002-07-15 2005-01-25 Hitachi, Ltd. Scanning electron microscope
US6646262B1 (en) 2000-03-31 2003-11-11 Hitachi, Ltd. Scanning electron microscope
KR100885940B1 (ko) * 2000-06-27 2009-02-26 가부시키가이샤 에바라 세이사꾸쇼 하전입자선에 의한 검사장치 및 그 검사장치를 사용한장치제조방법
US6548810B2 (en) * 2001-08-01 2003-04-15 The University Of Chicago Scanning confocal electron microscope
DE10230929A1 (de) * 2002-07-09 2004-01-29 Leo Elektronenmikroskopie Gmbh Verfahren zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung und Vorrichtung hierfür
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
US6797955B1 (en) 2003-01-30 2004-09-28 Kla-Tencor Technologies Corporation Filtered e-beam inspection and review
US6812462B1 (en) 2003-02-21 2004-11-02 Kla-Tencor Technologies Corporation Dual electron beam instrument for multi-perspective
US6815675B1 (en) 2003-04-30 2004-11-09 Kla-Tencor Technologies Corporation Method and system for e-beam scanning
US7019292B1 (en) 2004-06-15 2006-03-28 Kla-Tencor Technologies Corporation E-beam detection of defective contacts/vias with flooding and energy filter
US7241991B1 (en) 2005-08-30 2007-07-10 Kla-Tencor Technologies Corporation Region-of-interest based electron beam metrology
JP5054990B2 (ja) 2007-01-30 2012-10-24 株式会社日立ハイテクノロジーズ 走査形電子顕微鏡
JP2010175249A (ja) * 2009-01-27 2010-08-12 Hitachi High-Technologies Corp 試料高さ測定方法及び試料高さ測定装置
JP6035928B2 (ja) * 2012-07-12 2016-11-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置
KR101724221B1 (ko) 2013-02-26 2017-04-06 가부시키가이샤 히다치 하이테크놀로지즈 하전 입자 선 장치
JP6581940B2 (ja) * 2016-04-15 2019-09-25 株式会社日立ハイテクノロジーズ 電子顕微鏡装置
US10096447B1 (en) * 2017-08-02 2018-10-09 Kla-Tencor Corporation Electron beam apparatus with high resolutions
JP2019169406A (ja) 2018-03-26 2019-10-03 株式会社日立ハイテクノロジーズ 荷電粒子線装置
DE102018204683B3 (de) * 2018-03-27 2019-08-08 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop
JP7396954B2 (ja) * 2020-04-01 2023-12-12 株式会社日立ハイテク 荷電粒子線装置
US11626267B2 (en) * 2021-04-28 2023-04-11 Applied Materials Israel Ltd. Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927075B2 (ja) * 1974-07-17 1984-07-03 ユニチカ株式会社 走査型電子顕微鏡
JPS5481075A (en) * 1977-11-24 1979-06-28 Cho Lsi Gijutsu Kenkyu Kumiai Method of detecting article image using electron beam
JPS59197881A (ja) * 1983-04-25 1984-11-09 Jeol Ltd エネルギ−選択機能を有する反射電子検出装置
US4588890A (en) * 1984-12-31 1986-05-13 International Business Machines Corporation Apparatus and method for composite image formation by scanning electron beam
US4868344A (en) * 1988-03-30 1989-09-19 Aldrich-Boranes, Inc. Novel process of producing phenyl or substituted phenylalkylamine pharmaceutical agents and novel chiral intermediates of high enantiomeric purity useful therein
US4958079A (en) * 1989-02-21 1990-09-18 Galileo Electro-Optics Corps. Detector for scanning electron microscopy apparatus
JPH0467550A (ja) * 1990-07-05 1992-03-03 Fujitsu Ltd 電子ビーム装置及びその画像取得方法
JP3285092B2 (ja) * 1990-10-12 2002-05-27 株式会社日立製作所 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法
US5332898A (en) * 1993-06-14 1994-07-26 Metrologix Precision measurement using particle beam devices

Also Published As

Publication number Publication date
JP3456999B2 (ja) 2003-10-14
EP0725975A4 (de) 1997-12-29
AU7977494A (en) 1995-05-22
JPH09507331A (ja) 1997-07-22
WO1995012210A1 (en) 1995-05-04
DE69422825T2 (de) 2000-08-17
EP0725975B1 (de) 2000-01-26
IL111384A (en) 1998-07-15
DE69422825D1 (de) 2000-03-02
IL111384A0 (en) 1994-12-29
EP0725975A1 (de) 1996-08-14
US5493116A (en) 1996-02-20

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Legal Events

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