ATE190428T1 - Elektrisch lösch-und programmierbarer nichtflüchtiger speicher, geschützt gegen stromunterbrechungen - Google Patents

Elektrisch lösch-und programmierbarer nichtflüchtiger speicher, geschützt gegen stromunterbrechungen

Info

Publication number
ATE190428T1
ATE190428T1 AT97926041T AT97926041T ATE190428T1 AT E190428 T1 ATE190428 T1 AT E190428T1 AT 97926041 T AT97926041 T AT 97926041T AT 97926041 T AT97926041 T AT 97926041T AT E190428 T1 ATE190428 T1 AT E190428T1
Authority
AT
Austria
Prior art keywords
electrically erasable
volatile memory
memory
programmable non
vpp
Prior art date
Application number
AT97926041T
Other languages
English (en)
Inventor
Jacek Kowalski
Michel Martin
Original Assignee
Inside Technologies
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inside Technologies filed Critical Inside Technologies
Application granted granted Critical
Publication of ATE190428T1 publication Critical patent/ATE190428T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Connection Of Batteries Or Terminals (AREA)
AT97926041T 1996-06-07 1997-05-27 Elektrisch lösch-und programmierbarer nichtflüchtiger speicher, geschützt gegen stromunterbrechungen ATE190428T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9607462A FR2749698B1 (fr) 1996-06-07 1996-06-07 Memoire remanente effacable et programmable electriquement, protegee contre les coupures d'alimentation
PCT/FR1997/000922 WO1997048100A1 (fr) 1996-06-07 1997-05-27 Memoire remanente effacable et programmable electriquement, protegee contre les coupures d'alimentation

Publications (1)

Publication Number Publication Date
ATE190428T1 true ATE190428T1 (de) 2000-03-15

Family

ID=9493092

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97926041T ATE190428T1 (de) 1996-06-07 1997-05-27 Elektrisch lösch-und programmierbarer nichtflüchtiger speicher, geschützt gegen stromunterbrechungen

Country Status (9)

Country Link
EP (1) EP0902949B1 (de)
JP (1) JP4129497B2 (de)
CN (1) CN1132191C (de)
AT (1) ATE190428T1 (de)
AU (1) AU714734B2 (de)
CA (1) CA2257339C (de)
DE (1) DE69701395T2 (de)
FR (1) FR2749698B1 (de)
WO (1) WO1997048100A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5768208A (en) * 1996-06-18 1998-06-16 Microchip Technology Incorporated Fail safe non-volatile memory programming system and method therefor
US5943263A (en) 1997-01-08 1999-08-24 Micron Technology, Inc. Apparatus and method for programming voltage protection in a non-volatile memory system
FR2770325B1 (fr) * 1997-10-29 2001-10-05 Sgs Thomson Microelectronics Circuit generateur de tension pour programmer ou effacer une memoire qui utilise des transistors a grille flottante
EP0953984B1 (de) * 1998-04-30 2003-07-02 STMicroelectronics S.r.l. Verfahren zur Sicherung von Daten im Falle unerwünschter Unterbrechnungen während ein Programmzyklus eines nichtflüchtigen Speichers, und ein nichtflüchtiger Speicher
JP4248624B2 (ja) * 1998-07-03 2009-04-02 株式会社デンソー 内燃機関用電子制御装置。
JP4231572B2 (ja) 1998-07-07 2009-03-04 沖電気工業株式会社 電圧監視回路及びそれを内蔵したメモリカード
JP4133166B2 (ja) 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
EP1496468A1 (de) * 2003-07-11 2005-01-12 Axalto S.A. Verfahren zur Speicherverwaltung in einem tragbaren Gegenstand, der für verschiedene Verbingungsarten geeignet ist
CN100428203C (zh) * 2006-11-23 2008-10-22 北京飞天诚信科技有限公司 基于非易失性存储的便携式设备的实现掉电保护的方法
KR100888842B1 (ko) * 2007-06-28 2009-03-17 삼성전자주식회사 읽기 전압을 최적화할 수 있는 플래시 메모리 장치 및그것의 독출 전압 설정 방법
CN101656108B (zh) * 2008-08-19 2012-06-27 杭州士兰微电子股份有限公司 电源供电电路及应用方法
CN103345942B (zh) * 2013-07-03 2016-03-02 上海华力微电子有限公司 解析存储器操作类型错误的方法及其装置
CN105631965B (zh) * 2014-10-30 2018-03-16 中车大连电力牵引研发中心有限公司 车载wtb报文记录仪
KR101745679B1 (ko) * 2014-11-27 2017-06-09 주식회사 엘지화학 고흡수성 수지의 제조 방법 및 이를 통해 제조된 고흡수성 수지
FR3039921B1 (fr) * 2015-08-06 2018-02-16 Stmicroelectronics (Rousset) Sas Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom
FR3041807B1 (fr) * 2015-09-24 2017-12-08 Stmicroelectronics Rousset Procede de controle d'un cycle d'ecriture de memoire de type eeprom et dispositif correspondant
CN105404346B (zh) * 2015-12-22 2017-08-08 上海华虹宏力半导体制造有限公司 电压调整、高压产生和存储器电路
CN107403644B (zh) * 2017-05-22 2020-01-10 宜鼎国际股份有限公司 具备异常电源保护的闪存装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2604555B1 (fr) * 1986-09-30 1988-11-10 Eurotechnique Sa Circuit integre du type circuit logique comportant une memoire non volatile programmable electriquement
JP2507576B2 (ja) * 1988-12-28 1996-06-12 株式会社東芝 半導体不揮発性メモリ
EP0598475A3 (de) * 1992-11-17 1995-03-22 Advanced Micro Devices Inc Vorrichtung und Verfahren zum Schutz einer Programmierbaren logischen Schaltung gegen Überspannungen.
US5371709A (en) * 1993-04-01 1994-12-06 Microchip Technology Incorporated Power management system for serial EEPROM device
JPH07248977A (ja) * 1994-03-10 1995-09-26 Fuji Electric Co Ltd 不揮発性メモリ回路

Also Published As

Publication number Publication date
FR2749698A1 (fr) 1997-12-12
CA2257339C (fr) 2006-09-19
EP0902949B1 (de) 2000-03-08
JP4129497B2 (ja) 2008-08-06
CA2257339A1 (fr) 1997-12-18
FR2749698B1 (fr) 1998-09-04
DE69701395T2 (de) 2000-09-07
DE69701395D1 (de) 2000-04-13
WO1997048100A1 (fr) 1997-12-18
CN1226334A (zh) 1999-08-18
AU714734B2 (en) 2000-01-13
JP2000512054A (ja) 2000-09-12
EP0902949A1 (de) 1999-03-24
AU3096497A (en) 1998-01-07
CN1132191C (zh) 2003-12-24

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties