ATE193067T1 - Reaktionskammer mit quasi heisser wandung - Google Patents

Reaktionskammer mit quasi heisser wandung

Info

Publication number
ATE193067T1
ATE193067T1 AT96102721T AT96102721T ATE193067T1 AT E193067 T1 ATE193067 T1 AT E193067T1 AT 96102721 T AT96102721 T AT 96102721T AT 96102721 T AT96102721 T AT 96102721T AT E193067 T1 ATE193067 T1 AT E193067T1
Authority
AT
Austria
Prior art keywords
wafer
disk
quasi
thermal source
reaction chamber
Prior art date
Application number
AT96102721T
Other languages
English (en)
Inventor
Paul R Lindstrom
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE193067T1 publication Critical patent/ATE193067T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cookers (AREA)
  • Devices For Medical Bathing And Washing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Devices For Use In Laboratory Experiments (AREA)
AT96102721T 1995-02-23 1996-02-23 Reaktionskammer mit quasi heisser wandung ATE193067T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39431795A 1995-02-23 1995-02-23
US52023395A 1995-08-25 1995-08-25

Publications (1)

Publication Number Publication Date
ATE193067T1 true ATE193067T1 (de) 2000-06-15

Family

ID=27014684

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96102721T ATE193067T1 (de) 1995-02-23 1996-02-23 Reaktionskammer mit quasi heisser wandung

Country Status (5)

Country Link
EP (1) EP0728850B1 (de)
JP (1) JPH08316154A (de)
KR (1) KR100375396B1 (de)
AT (1) ATE193067T1 (de)
DE (1) DE69608335T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897167A (ja) * 1994-09-28 1996-04-12 Tokyo Electron Ltd 処理装置及び熱処理装置
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6067931A (en) * 1996-11-04 2000-05-30 General Electric Company Thermal processor for semiconductor wafers
US6018616A (en) * 1998-02-23 2000-01-25 Applied Materials, Inc. Thermal cycling module and process using radiant heat
JP4582929B2 (ja) * 2001-02-14 2010-11-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜装置
KR100712814B1 (ko) * 2005-12-08 2007-04-30 동부일렉트로닉스 주식회사 웨이퍼 가열장치 및 가열 방법
JP2009267017A (ja) * 2008-04-24 2009-11-12 Sumitomo Electric Ind Ltd 気相成長装置および半導体基板の製造方法
DE102008034260B4 (de) * 2008-07-16 2014-06-26 Siltronic Ag Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD
US9044793B2 (en) 2011-11-22 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for cleaning film formation apparatus and method for manufacturing semiconductor device
CN104362076B (zh) * 2014-09-23 2017-04-19 北京七星华创电子股份有限公司 半导体设备的温度控制装置、控制系统及其控制方法
US10573498B2 (en) 2017-01-09 2020-02-25 Applied Materials, Inc. Substrate processing apparatus including annular lamp assembly
CN112376035B (zh) * 2020-11-02 2025-04-22 南昌大学 一种适用于制备高In组分InGaN材料的反应装置
US12221696B2 (en) * 2022-05-27 2025-02-11 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability
US20250257454A1 (en) * 2024-02-14 2025-08-14 Applied Materials, Inc. Side blocks for gas activation, and related processing chambers, process kits, and methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149020A (ja) * 1983-02-16 1984-08-25 Hitachi Ltd 縦型反応炉
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
JP2888026B2 (ja) * 1992-04-30 1999-05-10 松下電器産業株式会社 プラズマｃｖｄ装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers

Also Published As

Publication number Publication date
KR960032594A (ko) 1996-09-17
KR100375396B1 (ko) 2003-05-09
EP0728850A3 (de) 1997-06-04
DE69608335D1 (de) 2000-06-21
DE69608335T2 (de) 2001-02-08
JPH08316154A (ja) 1996-11-29
EP0728850A2 (de) 1996-08-28
EP0728850B1 (de) 2000-05-17

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Legal Events

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