ATE194172T1 - Verfahren zum aufwachsen eines epitaxischen filmes auf eine oxidoberfläche und produkt - Google Patents

Verfahren zum aufwachsen eines epitaxischen filmes auf eine oxidoberfläche und produkt

Info

Publication number
ATE194172T1
ATE194172T1 AT95904844T AT95904844T ATE194172T1 AT E194172 T1 ATE194172 T1 AT E194172T1 AT 95904844 T AT95904844 T AT 95904844T AT 95904844 T AT95904844 T AT 95904844T AT E194172 T1 ATE194172 T1 AT E194172T1
Authority
AT
Austria
Prior art keywords
perovskite
spinel
built
film
metal oxide
Prior art date
Application number
AT95904844T
Other languages
English (en)
Inventor
Rodney A Mckee
Frederick J Walker
Original Assignee
Lockheed Martin Energy Sys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Martin Energy Sys Inc filed Critical Lockheed Martin Energy Sys Inc
Application granted granted Critical
Publication of ATE194172T1 publication Critical patent/ATE194172T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
  • Surface Treatment Of Optical Elements (AREA)
AT95904844T 1993-12-08 1994-12-08 Verfahren zum aufwachsen eines epitaxischen filmes auf eine oxidoberfläche und produkt ATE194172T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/163,427 US5450812A (en) 1993-07-30 1993-12-08 Process for growing a film epitaxially upon an oxide surface and structures formed with the process
PCT/US1994/014098 WO1995016061A1 (en) 1993-12-08 1994-12-08 Process for growing an epitaxial film on an oxide surface and product

Publications (1)

Publication Number Publication Date
ATE194172T1 true ATE194172T1 (de) 2000-07-15

Family

ID=22589967

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95904844T ATE194172T1 (de) 1993-12-08 1994-12-08 Verfahren zum aufwachsen eines epitaxischen filmes auf eine oxidoberfläche und produkt

Country Status (11)

Country Link
US (1) US5450812A (de)
EP (1) EP0819187B1 (de)
JP (1) JP3671055B2 (de)
AT (1) ATE194172T1 (de)
CA (1) CA2178656C (de)
DE (1) DE69425078T2 (de)
DK (1) DK0819187T3 (de)
ES (1) ES2147281T3 (de)
GR (1) GR3034394T3 (de)
PT (1) PT819187E (de)
WO (1) WO1995016061A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19627793C2 (de) * 1996-07-10 2002-02-28 Forschungszentrum Juelich Gmbh Wellenleiter
US6093242A (en) * 1996-08-05 2000-07-25 Ut-Battelle, Llc Anisotropy-based crystalline oxide-on-semiconductor material
US6023082A (en) * 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US6080235A (en) * 1997-06-03 2000-06-27 Ut-Battelle, Llc Geometric shape control of thin film ferroelectrics and resulting structures
US5767543A (en) * 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
US6103008A (en) * 1998-07-30 2000-08-15 Ut-Battelle, Llc Silicon-integrated thin-film structure for electro-optic applications
US6248459B1 (en) 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6241821B1 (en) 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6270568B1 (en) * 1999-07-15 2001-08-07 Motorola, Inc. Method for fabricating a semiconductor structure with reduced leakage current density
US6306668B1 (en) 1999-09-23 2001-10-23 Ut-Battelle, Llc Control method and system for use when growing thin-films on semiconductor-based materials
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
AU2001257346A1 (en) 2000-05-31 2001-12-11 Motorola, Inc. Semiconductor device and method for manufacturing the same
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US20020152953A1 (en) * 2001-04-23 2002-10-24 Chambers Scott A. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
CN1402027A (zh) * 2001-08-03 2003-03-12 Asml美国公司 能用于光波导的氧化物构件及其制造方法
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
WO2004023194A2 (en) * 2002-09-04 2004-03-18 Massachusetts Institute Of Technology Optical isolator with magneto-optical material and manufacturing method
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US9023662B2 (en) 2011-05-09 2015-05-05 Board Of Regents, The University Of Texas System Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor material
US20130320813A1 (en) * 2012-06-04 2013-12-05 Tdk Corporation Dielectric device
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics
US11342484B2 (en) 2020-05-11 2022-05-24 Silanna UV Technologies Pte Ltd Metal oxide semiconductor-based light emitting device
JP7793776B2 (ja) 2021-11-10 2026-01-05 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッド エピタキシャル酸化物材料、構造、及びデバイス
KR20240095343A (ko) 2021-11-10 2024-06-25 실라나 유브이 테크놀로지스 피티이 리미티드 에피택셜 산화물 물질, 구조 및 소자

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655429A (en) * 1969-04-16 1972-04-11 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducers
US4996187A (en) * 1988-10-17 1991-02-26 Allied-Signal Inc. Epitaxial Ba-Y-Cu-O superconductor film
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
US5323024A (en) * 1992-10-09 1994-06-21 Adams Jeff C Relativistic semiconductor plasma wave frequency up-converter

Also Published As

Publication number Publication date
PT819187E (pt) 2000-10-31
GR3034394T3 (en) 2000-12-29
DE69425078D1 (de) 2000-08-03
CA2178656C (en) 2005-06-28
US5450812A (en) 1995-09-19
DK0819187T3 (da) 2000-08-28
CA2178656A1 (en) 1995-06-15
EP0819187A4 (de) 1998-01-21
WO1995016061A1 (en) 1995-06-15
DE69425078T2 (de) 2000-11-02
JPH09509640A (ja) 1997-09-30
EP0819187A1 (de) 1998-01-21
JP3671055B2 (ja) 2005-07-13
ES2147281T3 (es) 2000-09-01
EP0819187B1 (de) 2000-06-28

Similar Documents

Publication Publication Date Title
DE69425078D1 (de) Verfahren zum aufwachsen eines epitaxischen filmes auf eine oxidoberfläche und produkt
ATE327049T1 (de) Struktur mit biachsialer textur und verfahren zu deren herstellung
EP0661754A3 (de) Substrat, das eine dünne Schicht aus ferroelektrische Kristall enthält, Verfahren zur Herstellung und Anordnung mit Verwendung dieses Substrates.
WO1999001593A3 (en) Elimination of defects in epitaxial films
KR950703799A (ko) 펄스식 엑시머 레이저 증발에 의한 박막의 제조방법(process for making thin films by pulsed excimer laser evaporation)
CA2029038A1 (en) Process and system for preparing a superconducting thin film of oxide
Koster et al. Influence of the surface treatment on the homoepitaxial growth of SrTiO3
ATE140104T1 (de) Verfahren zur herstellung einer supraleitenden, epitaktischen ybacuo-schicht
Wang et al. Improvement of piezoelectric properties of relaxor type 0.695 Pb (Mg1/3Nb2/3) O3− 0.305 PbTiO3 single crystal plate and silver vibrator by alternating current poling
Contour et al. Growth of [YBa2Cu3O7-δ] M/[PrBa2Cu3-x Ga x O7-δ] N Superlattices by Pulsed Laser Deposition
Horita et al. Structural and electrical properties of yttria-stabilized zirconia films with controlled Y content heteroepitaxially grown on Si by reactive sputtering
US5595960A (en) Method of depositing a superconductor layer on a substrate through an intermediate layer of doped CeO2
Junqua et al. Surface step-dislocation transition and dislocation nucleation at a solid free surface
Wasa et al. Basic deposition process and ferroelectric properties of sputtered PLZT thin films
Cheynis et al. Stress effects on solid–state dewetting of nano–thin films
EP0390139A3 (de) Dünne ferroelektrische Schicht und Verfahren zu ihrer Herstellung
Flynn Tuned tilt of epitaxial crystals
Fesenko et al. The switching of PbTiO3 crystals
Tomashpolsky Surface layers in ferroelectric and HTc superconducting thin films
Pannetier et al. CW laser annealing of A15 superconductors
Bartenlian et al. Nucleation and growth of gallium arsenide on silicon
Masaki Yamaguchi et al. Preparation and Characterization of Ferroelectric Bi 4Ti 3O 12 Thin Films Grown on (100)-Oriented Silicon Wafers
JP2574225B2 (ja) 多成分薄膜
Xu et al. On the composite and intrinsic hardness of Ti (C, N) films
Usagawa et al. An atomically smooth (110) surface obtained by (110) YBCO homoepitaxy on (110) YBCO single crystal substrates

Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee