ATE194251T1 - Relaisfotohalbleiter, relaisfotohalbleitervorrichtung, steuergerät mit relaisfotohalbleitervorrichtung, leistungsversorgungsvorrichtung mit fotohalbleitervorrichtung und schaltgerät mit relaisfotohalbleitervorrichtung - Google Patents

Relaisfotohalbleiter, relaisfotohalbleitervorrichtung, steuergerät mit relaisfotohalbleitervorrichtung, leistungsversorgungsvorrichtung mit fotohalbleitervorrichtung und schaltgerät mit relaisfotohalbleitervorrichtung

Info

Publication number
ATE194251T1
ATE194251T1 AT95111874T AT95111874T ATE194251T1 AT E194251 T1 ATE194251 T1 AT E194251T1 AT 95111874 T AT95111874 T AT 95111874T AT 95111874 T AT95111874 T AT 95111874T AT E194251 T1 ATE194251 T1 AT E194251T1
Authority
AT
Austria
Prior art keywords
photosemiconductor
relay
light
power supply
switching
Prior art date
Application number
AT95111874T
Other languages
English (en)
Inventor
Hiroyasu Torazawa
Hiroaki Ogawa
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Application granted granted Critical
Publication of ATE194251T1 publication Critical patent/ATE194251T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Electronic Switches (AREA)
  • Relay Circuits (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
AT95111874T 1994-08-31 1995-07-27 Relaisfotohalbleiter, relaisfotohalbleitervorrichtung, steuergerät mit relaisfotohalbleitervorrichtung, leistungsversorgungsvorrichtung mit fotohalbleitervorrichtung und schaltgerät mit relaisfotohalbleitervorrichtung ATE194251T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20654994A JPH0879041A (ja) 1994-08-31 1994-08-31 光半導体リレーとこれを用いたコントローラ、電力供給装置及び端末装置切換装置

Publications (1)

Publication Number Publication Date
ATE194251T1 true ATE194251T1 (de) 2000-07-15

Family

ID=16525232

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95111874T ATE194251T1 (de) 1994-08-31 1995-07-27 Relaisfotohalbleiter, relaisfotohalbleitervorrichtung, steuergerät mit relaisfotohalbleitervorrichtung, leistungsversorgungsvorrichtung mit fotohalbleitervorrichtung und schaltgerät mit relaisfotohalbleitervorrichtung

Country Status (5)

Country Link
US (1) US5757020A (de)
EP (1) EP0700101B1 (de)
JP (1) JPH0879041A (de)
AT (1) ATE194251T1 (de)
DE (1) DE69517638T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195973A (ja) * 1998-01-07 1999-07-21 Oki Electric Ind Co Ltd 半導体装置及びそれを用いた双方向光ｍｏｓリレー
JP2001036394A (ja) * 1999-07-23 2001-02-09 Oki Electric Ind Co Ltd フォトカプラ
JP5027680B2 (ja) * 2008-01-18 2012-09-19 パナソニック株式会社 半導体リレーモジュール
US9331214B2 (en) * 2011-10-11 2016-05-03 Joe Lin Diode cell modules
US9214935B2 (en) * 2012-05-17 2015-12-15 Rockwell Automation Technologies, Inc. Output module for industrial control with sink and source capability and low heat dissipation
EP3118994A1 (de) * 2015-07-13 2017-01-18 Siemens Aktiengesellschaft Schaltmittel zum schalten einer last und ausgabebaugruppe für die industrielle automatisierung
RU168190U1 (ru) * 2016-07-25 2017-01-23 Акционерное общество "Протон" (АО "Протон") Оптоэлектронный коммутатор на моп-транзисторах
EP3567641A4 (de) 2017-01-05 2020-02-05 Panasonic Corporation Halbleiterrelais
WO2019009006A1 (ja) 2017-07-07 2019-01-10 パナソニック株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665316A (en) * 1984-11-21 1987-05-12 Telmos Incorporated Photovoltaic relay switch
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
JPS6490614A (en) * 1987-09-30 1989-04-07 Toshiba Corp Switch controller
JPH01208015A (ja) 1988-02-15 1989-08-22 Oki Electric Ind Co Ltd 光結合形電界効果トランジスタスイッチ
JPH01215072A (ja) * 1988-02-24 1989-08-29 Fuji Electric Co Ltd 高速光半導体リレー
US5151602A (en) * 1990-02-15 1992-09-29 Matsushita Electric Works, Ltd. Semiconductor relay circuit using photovoltaic diodes
JP2698723B2 (ja) * 1991-12-12 1998-01-19 松下電工株式会社 半導体リレー回路
JP2801825B2 (ja) * 1993-01-14 1998-09-21 株式会社東芝 フォトカプラ装置
US5298817A (en) * 1993-02-09 1994-03-29 At&T Bell Laboratories High-frequency solid-state relay
JP2807388B2 (ja) * 1993-03-19 1998-10-08 株式会社東芝 フォトカプラ装置
JP3380308B2 (ja) * 1993-09-28 2003-02-24 沖電気工業株式会社 光半導体リレー装置

Also Published As

Publication number Publication date
DE69517638D1 (de) 2000-08-03
US5757020A (en) 1998-05-26
EP0700101B1 (de) 2000-06-28
EP0700101A1 (de) 1996-03-06
JPH0879041A (ja) 1996-03-22
DE69517638T2 (de) 2001-03-01

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee