ATE198907T1 - Ph-regulierter alkalischer reiniger mit nicht ionischem tensid zur reinigung mikroelektronischer substrate - Google Patents

Ph-regulierter alkalischer reiniger mit nicht ionischem tensid zur reinigung mikroelektronischer substrate

Info

Publication number
ATE198907T1
ATE198907T1 AT95105743T AT95105743T ATE198907T1 AT E198907 T1 ATE198907 T1 AT E198907T1 AT 95105743 T AT95105743 T AT 95105743T AT 95105743 T AT95105743 T AT 95105743T AT E198907 T1 ATE198907 T1 AT E198907T1
Authority
AT
Austria
Prior art keywords
microelectronic substrates
ionic surfactant
alkaline cleaner
cleaning microelectronic
cleaning
Prior art date
Application number
AT95105743T
Other languages
English (en)
Inventor
Joseph M Ilardi
George Schwartzkopf
Gary G Dailey
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Application granted granted Critical
Publication of ATE198907T1 publication Critical patent/ATE198907T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
AT95105743T 1994-04-20 1995-04-18 Ph-regulierter alkalischer reiniger mit nicht ionischem tensid zur reinigung mikroelektronischer substrate ATE198907T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/230,132 US5466389A (en) 1994-04-20 1994-04-20 PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates

Publications (1)

Publication Number Publication Date
ATE198907T1 true ATE198907T1 (de) 2001-02-15

Family

ID=22864064

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95105743T ATE198907T1 (de) 1994-04-20 1995-04-18 Ph-regulierter alkalischer reiniger mit nicht ionischem tensid zur reinigung mikroelektronischer substrate

Country Status (11)

Country Link
US (1) US5466389A (de)
EP (1) EP0678571B1 (de)
JP (1) JP2670987B2 (de)
KR (1) KR0160372B1 (de)
AT (1) ATE198907T1 (de)
CA (1) CA2146036C (de)
DE (1) DE69519955T2 (de)
ES (1) ES2153442T3 (de)
IL (1) IL113036A (de)
MY (1) MY112282A (de)
TW (1) TW301669B (de)

Families Citing this family (160)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
DE19525521B4 (de) * 1994-07-15 2007-04-26 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Verfahren zum Reinigen von Substraten
KR100360394B1 (ko) * 1995-12-20 2003-01-24 삼성전자 주식회사 반도체기판의세정방법및이에사용되는세정액
KR100207469B1 (ko) * 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
US6410494B2 (en) 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US5932021A (en) * 1996-06-26 1999-08-03 Cala; Francis R. Aqueous cleaning composition for removing flux and method of use
WO1997049790A1 (en) * 1996-06-26 1997-12-31 Church & Dwight Company, Inc. Aqueous cleaning composition for removing flux and method of use
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6323168B1 (en) * 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
AU3661997A (en) * 1996-07-25 1998-02-20 Ekc Technology, Inc. Chemical mechanical polishing composition and process
JP2008277848A (ja) * 1996-07-26 2008-11-13 Ekc Technol Inc 化学機械研磨組成物及び化学機械研磨方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JP2001508239A (ja) * 1997-01-09 2001-06-19 アドバンスド ケミカル システムズ インターナショナル，インコーポレイテッド 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6224785B1 (en) * 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
KR100497835B1 (ko) * 1997-01-27 2005-09-08 미쓰비시 가가꾸 가부시키가이샤 표면처리조성물및이를이용한기판의표면처리방법
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US5958144A (en) * 1997-05-20 1999-09-28 Church & Dwight Flux-removing aqueous cleaning composition and method of use
AU7040698A (en) * 1997-07-10 1999-02-08 Merck Patent Gmbh Solutions for cleaning silicon semiconductors or silicon oxides
KR100510440B1 (ko) * 1997-08-20 2005-10-21 삼성전자주식회사 세정용액및이를이용한반도체소자의세정방법
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
US5989354A (en) * 1997-12-22 1999-11-23 Lucent Technologies, Inc. Method for removing thin, organic materials from semiconductor dies and micro-lenses
US6884721B2 (en) * 1997-12-25 2005-04-26 Shin-Etsu Handotai Co., Ltd. Silicon wafer storage water and silicon wafer storage method
US6231677B1 (en) † 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
KR100287173B1 (ko) * 1998-03-13 2001-06-01 윤종용 포토레지스트제거방법및이들을이용한반도체장치의제조방법
US6057240A (en) * 1998-04-06 2000-05-02 Chartered Semiconductor Manufacturing, Ltd. Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers
JP4565741B2 (ja) * 1998-05-18 2010-10-20 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクス基板洗浄用珪酸塩含有アルカリ組成物
ES2328309T3 (es) * 1998-05-18 2009-11-11 Mallinckrodt Baker, Inc. Composiciones alcalinas que contienen silicato para limpiar sustratos microelectronicos.
US5964953A (en) * 1998-05-26 1999-10-12 Memc Electronics Materials, Inc. Post-etching alkaline treatment process
KR100568381B1 (ko) * 1998-05-26 2006-04-05 닛토 케미칼 인더스트리즈 리미티드 반도체 처리장치 부품용 세정액 및 세정방법
US6280527B1 (en) 1998-06-12 2001-08-28 International Business Machines Corporation Aqueous quaternary ammonium hydroxide as a screening mask cleaner
US5980643A (en) * 1998-06-18 1999-11-09 Semitool, Inc. Alkaline water-based solution for cleaning metallized microelectronic
US6432214B2 (en) * 1998-07-10 2002-08-13 Semitool, Inc. Cleaning apparatus
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
JP2000091289A (ja) 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
JP3180779B2 (ja) 1998-10-05 2001-06-25 日本電気株式会社 半導体装置の製造方法
JP4170482B2 (ja) * 1998-12-03 2008-10-22 シャープ株式会社 液晶パネル用ガラス基板の洗浄方法
US20030092171A1 (en) * 1998-11-16 2003-05-15 Steven Henck Surface treatments for DNA processing devices
KR100630338B1 (ko) * 1998-11-27 2006-09-29 쇼와 덴코 가부시키가이샤 사이드월 제거용 조성물 및 사이드월 제거방법
US6103680A (en) * 1998-12-31 2000-08-15 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues
EP1018759A3 (de) * 1999-01-08 2000-08-30 Interuniversitair Micro-Elektronica Centrum Vzw Chemische Lösung und Verfahren zur Verminderung der Metallkontamination auf der Oberfläche eines Halbleitersubstrats
US6592676B1 (en) 1999-01-08 2003-07-15 Interuniversitair Micro-Elektronica Centrum Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate
EP1039518A1 (de) * 1999-03-24 2000-09-27 Interuniversitair Micro-Elektronica Centrum Vzw Chemische Lösung und Verfahren zur Verminderung der Metallkontamination auf der Oberfläche eines Halbleitersubstrats
GB2349984A (en) * 1999-03-04 2000-11-15 Ibm Decontamination of electronic cards from copper salts
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
JP3433156B2 (ja) 1999-05-07 2003-08-04 エア プロダクツ アンド ケミカルズ インコーポレイテッド 前もって湿らせたクリーニングワイパー
US6277799B1 (en) * 1999-06-25 2001-08-21 International Business Machines Corporation Aqueous cleaning of paste residue
US6537381B1 (en) * 1999-09-29 2003-03-25 Lam Research Corporation Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6652659B1 (en) * 1999-11-30 2003-11-25 Honeywell International Inc. Low species buffered rinsing fluids and method
KR100356987B1 (ko) * 2000-01-22 2002-10-18 엘지.필립스 엘시디 주식회사 열경화성 수지 제거용 조성물
KR100758186B1 (ko) * 2000-03-21 2007-09-13 와코 쥰야꾸 고교 가부시키가이샤 반도체 기판 세정제 및 세정 방법
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
US6498131B1 (en) * 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
DE10039987A1 (de) * 2000-08-16 2002-03-07 Wilfried Meichelboeck Verfahren zur Oberflächenreinigung
US6558879B1 (en) * 2000-09-25 2003-05-06 Ashland Inc. Photoresist stripper/cleaner compositions containing aromatic acid inhibitors
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP4371567B2 (ja) * 2000-11-22 2009-11-25 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタの製造方法
KR100822236B1 (ko) * 2000-11-30 2008-04-16 토소가부시키가이샤 레지스트 박리제
US6525009B2 (en) * 2000-12-07 2003-02-25 International Business Machines Corporation Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
CN100343361C (zh) * 2001-03-27 2007-10-17 高级技术材料公司 含有铜缓蚀剂、用于清洗半导体衬底上的无机残余物的水性清洗组合物
US6653265B2 (en) * 2001-06-20 2003-11-25 Cornell Research Foundation, Inc. Removable marking system
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
JP2003171694A (ja) * 2001-12-03 2003-06-20 Mejiro Optica:Kk 洗浄用組成物並びに洗浄方法
US20030148624A1 (en) * 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
ITMI20020178A1 (it) * 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
EP1490897B1 (de) * 2002-03-25 2007-01-31 Rohm and Haas Electronic Materials CMP Holdings, Inc. Lösung zum entfernen einer tantal-barierre-schicht
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US7192886B2 (en) * 2002-10-25 2007-03-20 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
US7700532B2 (en) * 2002-11-08 2010-04-20 Wako Pure Chemical Industries, Ltd. Cleaning composition and method of cleaning therewith
KR100536593B1 (ko) * 2002-12-05 2005-12-14 삼성전자주식회사 선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법
US7163018B2 (en) * 2002-12-16 2007-01-16 Applied Materials, Inc. Single wafer cleaning method to reduce particle defects on a wafer surface
EP1648991B1 (de) * 2003-06-27 2007-10-17 Interuniversitair Microelektronica Centrum ( Imec) Halbleiterreinigungslösung
US7306663B2 (en) * 2003-08-05 2007-12-11 Halox, Division Of Hammond Group, Inc. Corrosion inhibitor
US7241725B2 (en) 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
EP1680806A4 (de) * 2003-10-28 2008-07-30 Sachem Inc Reinigungslösungen und ätzmittel und verfahren zu ihrer verwendung
JP4620680B2 (ja) * 2003-10-29 2011-01-26 マリンクロッド・ベイカー・インコーポレイテッド ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング／灰化後の残渣の除去剤およびフォトレジスト剥離組成物
US7129182B2 (en) * 2003-11-06 2006-10-31 Intel Corporation Method for etching a thin metal layer
US7262140B2 (en) * 2003-11-24 2007-08-28 Intel Corporation Method of smoothing waveguide structures
US7432233B2 (en) * 2003-12-18 2008-10-07 Interuniversitair Microelektronica Centrum (Imec) Composition and method for treating a semiconductor substrate
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US7354863B2 (en) * 2004-03-19 2008-04-08 Micron Technology, Inc. Methods of selectively removing silicon
JP4440689B2 (ja) * 2004-03-31 2010-03-24 東友ファインケム株式会社 レジスト剥離剤組成物
JP2006032694A (ja) * 2004-07-16 2006-02-02 Toshiba Corp 半導体装置の製造方法
EP1628336B1 (de) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Reinigungsmittel und Methode zur Reinigung
US20060073997A1 (en) * 2004-09-30 2006-04-06 Lam Research Corporation Solutions for cleaning silicon semiconductors or silicon oxides
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI538033B (zh) * 2005-01-27 2016-06-11 安堤格里斯公司 半導體基板處理用之組成物
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
US20070093406A1 (en) * 2005-10-24 2007-04-26 Omoregie Henryson Novel cleaning process for masks and mask blanks
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
KR100678482B1 (ko) * 2006-01-17 2007-02-02 삼성전자주식회사 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
KR100729235B1 (ko) * 2006-06-01 2007-06-15 삼성전자주식회사 프로브 카드용 세정액 조성물 및 이를 이용한 프로브카드의 세정 방법
DE102006025994B3 (de) * 2006-06-02 2008-01-03 Sprügel, Friedrich A. Reinigungsflüssigkeit mit verringerter Entzündbarkeit
CN101495248A (zh) * 2006-07-07 2009-07-29 Fsi国际公司 液体气溶胶颗粒去除方法
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
EP2082024A4 (de) * 2006-09-25 2010-11-17 Advanced Tech Materials Zusammensetzungen und verfahren zur entfernung von fotolack bei einer wafer-nacharbeit
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
EP2158892A4 (de) 2007-04-25 2012-12-19 Panasonic Corp Übungsunterstützungsvorrichtung
EP2039748A1 (de) * 2007-09-17 2009-03-25 The Procter and Gamble Company Verfahren zur Behandlung von geneigten harten Oberflächen
US20090120457A1 (en) * 2007-11-09 2009-05-14 Surface Chemistry Discoveries, Inc. Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices
CN101855334B (zh) * 2007-11-13 2013-03-27 沙琛公司 高负电动势多面体倍半硅氧烷组合物及无损坏半导体湿式清洁方法
CN101884092A (zh) * 2007-12-04 2010-11-10 三菱化学株式会社 半导体器件用基板的清洗方法及清洗液
US8809247B2 (en) 2008-02-15 2014-08-19 Lion Corporation Cleaning composition and method for cleaning substrate for electronic device
JP5813280B2 (ja) * 2008-03-19 2015-11-17 富士フイルム株式会社 半導体デバイス用洗浄液、および洗浄方法
US8580656B2 (en) * 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
KR101752684B1 (ko) 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
US20100178887A1 (en) 2009-01-13 2010-07-15 Millam Michael J Blast shield for use in wireless transmission system
EP2312618B1 (de) * 2009-10-14 2016-02-10 Rohm and Haas Electronic Materials LLC Verfahren zur Reinigung und Mikroätzung von Halbleiter-Wafern
US8298751B2 (en) * 2009-11-02 2012-10-30 International Business Machines Corporation Alkaline rinse agents for use in lithographic patterning
EP2348142B1 (de) 2010-01-25 2018-12-05 Westinghouse Electric Company Llc Verfahren und Zusammensetzung zum Entfernen von Zunderablagerungen entstehend auf einer metallischen Oberfläche innerhalb einer Dampferzeugungsanlage
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
ES2699223T3 (es) 2010-06-09 2019-02-08 Basf Se Composición acuosa alcalina de grabado y de limpieza y procedimiento de tratamiento de la superficie de sustratos de silicio
US8883701B2 (en) * 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
EP2557147B1 (de) 2011-08-09 2015-04-01 Basf Se Wässrige basische Lösung und Verfahren zur Behandlung der Oberfläche von Siliziumsubstraten
CN103717687B (zh) * 2011-08-09 2016-05-18 巴斯夫欧洲公司 处理硅基材表面的含水碱性组合物和方法
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
SG11201404930SA (en) * 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
WO2013165234A1 (en) * 2012-05-02 2013-11-07 Universiti Putra Malasia Detergent formulation for dishwashing machine
US8598042B1 (en) * 2012-06-01 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Device manufacturing and cleaning method
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6157895B2 (ja) * 2013-04-01 2017-07-05 株式会社トクヤマ テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット
US10199564B2 (en) * 2015-02-04 2019-02-05 Sumitomo Chemical Company, Limited Method for manufacturing niobate-system ferroelectric thin-film device
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
US12084628B2 (en) 2017-11-28 2024-09-10 Basf Se Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
EP3760585B9 (de) * 2018-03-28 2024-04-24 Tokuyama Corporation Zerkleinerte polykristalline siliciumklumpen und verfahren zur herstellung davon
KR102062342B1 (ko) * 2019-03-08 2020-01-03 영창케미칼 주식회사 반도체 웨이퍼 세정액 조성물 및 그를 이용한 세정방법
CN112647084B (zh) * 2020-11-20 2023-02-17 广东致卓环保科技有限公司 一种用于锌镍合金电镀层退镀的除灰剂和使用方法
CN113980580B (zh) * 2021-12-24 2022-04-08 绍兴拓邦新能源股份有限公司 一种单晶硅片的碱刻蚀抛光方法
CN114300340B (zh) * 2021-12-28 2025-03-18 广东先导微电子科技有限公司 一种降低晶片表面硅残留的方法
JP7760429B2 (ja) * 2022-03-29 2025-10-27 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理方法、および半導体基板の製造方法
CN114965505A (zh) * 2022-06-09 2022-08-30 东莞市通科电子有限公司 一种芯片弹坑检测过程中常温腐球的方法
CN114989901B (zh) * 2022-06-27 2024-01-05 广东韶钢松山股份有限公司 电感耦合等离子体发射光谱仪矩管用清洗剂和清洗方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886099A (en) * 1972-03-13 1975-05-27 Griffin Bros Inc Water soluble flux remover
DE2541624C2 (de) * 1975-09-18 1982-09-16 Ibm Deutschland Gmbh, 7000 Stuttgart Wässrige Ätzlösung und Verfahren zum Ätzen von Polymerfilmen oder Folien auf Polyimidbasis
GB1573208A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Ltd Surface treating agent adapted for intermediate products of a semiconductor device
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
DE3316876A1 (de) * 1983-05-07 1984-11-08 Henkel KGaA, 4000 Düsseldorf Mittel zur entfernung filbildender polymerer schutzueberzuege
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
US4710449A (en) * 1986-01-29 1987-12-01 Petrarch Systems, Inc. High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants
JPS63114132A (ja) * 1986-10-31 1988-05-19 Showa Denko Kk 表面処理液
JP2569574B2 (ja) * 1987-07-09 1997-01-08 三菱瓦斯化学株式会社 半導体処理剤
US5185235A (en) * 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
JPH0393229A (ja) * 1989-09-05 1991-04-18 Pure Retsukusu:Kk 半導体用ウェーハの清浄化方法
US5207866A (en) * 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
CA2059841A1 (en) * 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
DE69219998T2 (de) * 1991-10-31 1997-12-18 Sgs Thomson Microelectronics Verfahren zur Entfernung von Polymeren aus Sacklöchern in Halbleitervorrichtungen
US5259888A (en) * 1992-02-03 1993-11-09 Sachem, Inc. Process for cleaning quartz and silicon surfaces
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
JP3048207B2 (ja) * 1992-07-09 2000-06-05 イー．ケー．シー．テクノロジー．インコーポレイテッド 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法

Also Published As

Publication number Publication date
CA2146036C (en) 1999-08-17
KR950032597A (ko) 1995-12-22
TW301669B (de) 1997-04-01
DE69519955D1 (de) 2001-03-01
DE69519955T2 (de) 2001-08-23
IL113036A (en) 1999-09-22
CA2146036A1 (en) 1995-10-21
JPH07297158A (ja) 1995-11-10
KR0160372B1 (ko) 1998-11-16
EP0678571A3 (de) 1997-01-15
MY112282A (en) 2001-05-31
ES2153442T3 (es) 2001-03-01
IL113036A0 (en) 1995-06-29
US5466389A (en) 1995-11-14
JP2670987B2 (ja) 1997-10-29
EP0678571A2 (de) 1995-10-25
EP0678571B1 (de) 2001-01-24

Similar Documents

Publication Publication Date Title
DE69519955D1 (de) PH-regulierter alkalischer Reiniger mit nicht ionischem Tensid zur Reinigung mikroelektronischer Substrate
GB9809943D0 (en) Microfluidic device
DE69529705D1 (de) Verfahren und Lösung zur Reinigung eines Substrats von einer Metallkontamination
EP0611067A3 (de) Beschichtung von elektronischen Substraten mit Silika aus Polysilazanen.
EP0886547A4 (de) Verahren zur reinigung von metallverunreinigungen eines substrats unter beibehaltung der flachheit des substrats
CA2202673A1 (en) Water repellent surface treatment with acid activation
DE68917377D1 (de) Wasserabstossende Zusammensetzung für poröse Substrate.
CA2080373A1 (en) Compositions and methods for removing or preventing biofilm
NO950178L (no) Injeksjon og injeksjonssett
DE69906808D1 (de) Schmutzabweisende beschichtung für glasoberflächen
ES2111578T3 (es) Formulacion antimicrobiana con ph controlado.
EP1712531A3 (de) Photokatalytisches Verfahren zum ultrahydrophil-machen der Oberfläche eines Basismaterials, Basismaterial mit ultrahydrophilier und photokatalytischer Oberfläche und Verfahren zu dessen Herstellung
DE69110961D1 (de) Optischer Schaltkreis für Oberflächenmontage, Substrat dafür und seine Herstellungsmethode.
WO2002029860A3 (en) Wafer cleaning module and method for cleaning the surface of a substrate
DE69903668D1 (de) Schmutzabweisende beschichtung mit niedrigem emissionsvermögen für glasoberflächen
EP0994505A3 (de) Verfahren zur Reinigung von Substraten
DE59913298D1 (de) Riegelverschluss zur Montage in einer dünnen Wand
EP0791227A4 (de) Formen einer ebenen oberfläche über einem substrat durch modifizierung der topographie des substrats
GR3031529T3 (en) Stable aqueous emulsions of nonionic surfactants with a viscosity controlling agent.
ATE177141T1 (de) Verfahren zur stabilisierung eines kontaktlinsenpräparats
ATE315447T1 (de) Substrat mit einer photokatalytischen und/oder hydrophilen beschichtung in verbindung mit einem wasserverteiler
DE59711922D1 (de) Wässrige reinigungslösung für ein halbleitersubstrat
SE8802873D0 (sv) A method of controlling microbiological deposits on paper making equipment and paper obtained thereby
MA23372A1 (fr) Composition de blanchiment a base de hypochlorite
ATE191210T1 (de) Etikettierbarer glasgegenstand beschichtet mit einer durchsichtigen, hochabriebfesten schutzbeschichtung und verfahren zur herstellung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties