ATE198950T1 - Verfahren zum herstellen einer halbleitervorrichtung mit der selektiven abscheidung eines metalls - Google Patents

Verfahren zum herstellen einer halbleitervorrichtung mit der selektiven abscheidung eines metalls

Info

Publication number
ATE198950T1
ATE198950T1 AT91305021T AT91305021T ATE198950T1 AT E198950 T1 ATE198950 T1 AT E198950T1 AT 91305021 T AT91305021 T AT 91305021T AT 91305021 T AT91305021 T AT 91305021T AT E198950 T1 ATE198950 T1 AT E198950T1
Authority
AT
Austria
Prior art keywords
metal
semiconductor device
producing
selective deposition
electron
Prior art date
Application number
AT91305021T
Other languages
English (en)
Inventor
Yasue Sato
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE198950T1 publication Critical patent/ATE198950T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT91305021T 1990-06-01 1991-06-03 Verfahren zum herstellen einer halbleitervorrichtung mit der selektiven abscheidung eines metalls ATE198950T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2144611A JP2974376B2 (ja) 1990-06-01 1990-06-01 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
ATE198950T1 true ATE198950T1 (de) 2001-02-15

Family

ID=15366055

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91305021T ATE198950T1 (de) 1990-06-01 1991-06-03 Verfahren zum herstellen einer halbleitervorrichtung mit der selektiven abscheidung eines metalls

Country Status (5)

Country Link
US (1) US6303499B1 (de)
EP (1) EP0466320B1 (de)
JP (1) JP2974376B2 (de)
AT (1) ATE198950T1 (de)
DE (1) DE69132516T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6936181B2 (en) * 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US6878184B1 (en) 2002-08-09 2005-04-12 Kovio, Inc. Nanoparticle synthesis and the formation of inks therefrom
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
WO2012128748A1 (en) * 2011-03-18 2012-09-27 William Marsh Rice University Patterned graphite oxide films and methods to make and use same
CN106773177B (zh) * 2017-01-03 2020-03-06 京东方科技集团股份有限公司 一种信号线的修复系统及修复方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4339285A (en) * 1980-07-28 1982-07-13 Rca Corporation Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
US4595601A (en) 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
DE3666230D1 (en) * 1985-05-03 1989-11-16 American Telephone & Telegraph Method of making a device comprising a patterned aluminum layer
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
JPS61274345A (ja) * 1985-05-29 1986-12-04 Toshiba Corp 半導体装置の製造方法
JP2559030B2 (ja) 1986-07-25 1996-11-27 日本電信電話株式会社 金属薄膜の製造方法
US4785962A (en) * 1987-04-20 1988-11-22 Applied Materials, Inc. Vacuum chamber slit valve
JP2615106B2 (ja) * 1987-12-17 1997-05-28 東京エレクトロン株式会社 プローブ装置
JP2733244B2 (ja) * 1988-04-07 1998-03-30 株式会社日立製作所 配線形成方法
US4940505A (en) * 1988-12-02 1990-07-10 Eaton Corporation Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
JP2726118B2 (ja) * 1989-09-26 1998-03-11 キヤノン株式会社 堆積膜形成法
EP0420594B1 (de) * 1989-09-26 1996-04-17 Canon Kabushiki Kaisha Verfahren zur Herstellung von einer abgeschiedenen Metallschicht, die Aluminium als Hauptkomponent enthält, mit Anwendung von Alkalimetallaluminiumhydride

Also Published As

Publication number Publication date
DE69132516T2 (de) 2001-06-28
US6303499B1 (en) 2001-10-16
JPH0437121A (ja) 1992-02-07
EP0466320B1 (de) 2001-01-24
DE69132516D1 (de) 2001-03-01
EP0466320A2 (de) 1992-01-15
JP2974376B2 (ja) 1999-11-10
EP0466320A3 (en) 1992-07-29

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