ATE207244T1 - Photovoltaische vorrichtung und deren herstellungsverfahren - Google Patents

Photovoltaische vorrichtung und deren herstellungsverfahren

Info

Publication number
ATE207244T1
ATE207244T1 AT93111278T AT93111278T ATE207244T1 AT E207244 T1 ATE207244 T1 AT E207244T1 AT 93111278 T AT93111278 T AT 93111278T AT 93111278 T AT93111278 T AT 93111278T AT E207244 T1 ATE207244 T1 AT E207244T1
Authority
AT
Austria
Prior art keywords
semiconductor layer
layer
photovoltaic device
production
conductive
Prior art date
Application number
AT93111278T
Other languages
English (en)
Inventor
Ippei Sawayama
Hitoshi Toma
Yoshihiko Hyosu
Tatsuo Fujisaki
Toshihiko Mimura
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4210754A external-priority patent/JP2731088B2/ja
Priority claimed from JP4221683A external-priority patent/JPH0669524A/ja
Priority claimed from JP4273972A external-priority patent/JP2716630B2/ja
Priority claimed from JP4347456A external-priority patent/JP2716641B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE207244T1 publication Critical patent/ATE207244T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
AT93111278T 1992-07-15 1993-07-14 Photovoltaische vorrichtung und deren herstellungsverfahren ATE207244T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4210754A JP2731088B2 (ja) 1992-07-15 1992-07-15 光起電力素子の集電電極及びその製造方法
JP4221683A JPH0669524A (ja) 1992-08-20 1992-08-20 光発電素子
JP4273972A JP2716630B2 (ja) 1992-10-13 1992-10-13 光起電力素子の集電電極及びその製造方法
JP4347456A JP2716641B2 (ja) 1992-12-28 1992-12-28 光起電力素子の集電電極及びその製造方法

Publications (1)

Publication Number Publication Date
ATE207244T1 true ATE207244T1 (de) 2001-11-15

Family

ID=27476511

Family Applications (2)

Application Number Title Priority Date Filing Date
AT93111278T ATE207244T1 (de) 1992-07-15 1993-07-14 Photovoltaische vorrichtung und deren herstellungsverfahren
AT97103454T ATE239303T1 (de) 1992-07-15 1993-07-14 Photovoltaische vorichtung und verfahren zu deren herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT97103454T ATE239303T1 (de) 1992-07-15 1993-07-14 Photovoltaische vorichtung und verfahren zu deren herstellung

Country Status (6)

Country Link
US (2) US5428249A (de)
EP (2) EP0579199B1 (de)
KR (1) KR100190800B1 (de)
AT (2) ATE207244T1 (de)
AU (1) AU671639B2 (de)
DE (2) DE69332933T2 (de)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2992464B2 (ja) * 1994-11-04 1999-12-20 キヤノン株式会社 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法
US20080314433A1 (en) * 1995-05-15 2008-12-25 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7732243B2 (en) * 1995-05-15 2010-06-08 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
ES2197971T3 (es) * 1996-01-10 2004-01-16 Canon Kabushiki Kaisha Modulo de celula solar con cubierta superficial especifica con buenas caracteristicas de resistencia a humedad y transparencia.
US6121542A (en) * 1996-05-17 2000-09-19 Canon Kabushiki Kaisha Photovoltaic device
JPH10173210A (ja) * 1996-12-13 1998-06-26 Canon Inc 電極、その形成方法及び該電極を有する光起電力素子
DE69819740T2 (de) * 1997-02-24 2004-09-30 Superior Micropowders Llc, Albuquerque Aerosolverfahren und -gerät, teilchenförmige produkte, und daraus hergestellte elektronische geräte
JP3420917B2 (ja) * 1997-09-08 2003-06-30 富士通株式会社 半導体装置
US5986348A (en) * 1999-03-15 1999-11-16 Ball Semiconductor Inc. Magnetic alignment system for bumps on an integrated circuit device
US8076568B2 (en) 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US7507903B2 (en) 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7635810B2 (en) * 1999-03-30 2009-12-22 Daniel Luch Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US6390355B1 (en) * 1999-09-03 2002-05-21 Motorola, Inc. Method for forming a metallic contact on an electronic printed circuit board and a product therefrom
JP3334693B2 (ja) * 1999-10-08 2002-10-15 日本電気株式会社 半導体装置の製造方法
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898053B2 (en) 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898054B2 (en) * 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
JP2001345469A (ja) * 2000-06-01 2001-12-14 Canon Inc 光起電力素子および光起電力素子の製造方法
AU6071501A (en) * 2000-06-08 2001-12-17 Showa Denko Kabushiki Kaisha Semiconductor light-emitting device
EP1255303B1 (de) * 2000-10-20 2016-06-29 Sphelar Power Corporation Lichtemittierendes oder lichtempfindliches halbleitermodul und seine herstellungsmethode
WO2002052654A1 (en) * 2000-12-26 2002-07-04 Kabushiki Kaisha Hayashibara Seibutsu Kagaku Kenkyujo Solar cell
CN1470080A (zh) * 2001-08-13 2004-01-21 �����̵v 半导体器件及其制造方法
WO2003017382A1 (en) * 2001-08-13 2003-02-27 Josuke Nakata Light-emitting or light-receiving semiconductor module and method of its manufacture
TW531868B (en) * 2001-08-21 2003-05-11 Au Optronics Corp Soldering type anisotropic conductive film
WO2003036731A1 (fr) * 2001-10-19 2003-05-01 Josuke Nakata Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication
US20030178057A1 (en) * 2001-10-24 2003-09-25 Shuichi Fujii Solar cell, manufacturing method thereof and electrode material
FR2831714B1 (fr) * 2001-10-30 2004-06-18 Dgtec Assemblage de cellules photovoltaiques
DE10208635B4 (de) * 2002-02-28 2010-09-16 Infineon Technologies Ag Diffusionslotstelle, Verbund aus zwei über eine Diffusionslotstelle verbundenen Teilen und Verfahren zur Herstellung der Diffusionslotstelle
JP2005522629A (ja) 2002-04-11 2005-07-28 エイ． ハーゼ，リチャード 水燃焼技術−水素と酸素を燃焼させる方法、プロセス、システム及び装置
AU2002255303B2 (en) * 2002-05-02 2006-07-06 Sphelar Power Corporation Light-Receiving panel or light-emitting panel, and manufacturing method thereof
CN100380685C (zh) 2002-06-21 2008-04-09 中田仗祐 光电或发光用器件及其制造方法
JP2004179618A (ja) * 2002-10-04 2004-06-24 Sharp Corp 太陽電池およびその製造方法、太陽電池用インターコネクター、ストリングならびにモジュール
JP2004146464A (ja) * 2002-10-22 2004-05-20 Sharp Corp 太陽電池およびその製造方法、太陽電池用インターコネクター、ストリングならびにモジュール
US7059512B2 (en) * 2002-11-06 2006-06-13 Ricoh Company, Ltd. Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
US6992001B1 (en) * 2003-05-08 2006-01-31 Kulicke And Soffa Industries, Inc. Screen print under-bump metalization (UBM) to produce low cost flip chip substrate
CN1771641A (zh) * 2003-06-09 2006-05-10 京半导体股份有限公司 发电系统
JP4151541B2 (ja) * 2003-09-26 2008-09-17 松下電器産業株式会社 配線基板およびその製造方法
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
WO2005041312A1 (ja) * 2003-10-24 2005-05-06 Kyosemi Corporation 受光又は発光モジュールシート及びその製造方法
JP2005135942A (ja) * 2003-10-28 2005-05-26 Canon Inc 電極配設方法
US7017795B2 (en) * 2003-11-03 2006-03-28 Indium Corporation Of America Solder pastes for providing high elasticity, low rigidity solder joints
US7417264B2 (en) * 2003-12-22 2008-08-26 Samsung Electronics Co., Ltd. Top-emitting nitride-based light emitting device and method of manufacturing the same
US7070088B2 (en) * 2004-03-09 2006-07-04 Texas Instruments Incorporated Method of semiconductor device assembly including fatigue-resistant ternary solder alloy
EP1737048B1 (de) * 2004-03-31 2010-07-14 Sanyo Electric Co., Ltd. Verfahren zur herstellung einer solarzelle
JP4576270B2 (ja) * 2005-03-29 2010-11-04 昭和電工株式会社 ハンダ回路基板の製造方法
WO2007007865A1 (en) * 2005-07-11 2007-01-18 Showa Denko K.K. Method for attachment of solder powder to electronic circuit board and solder-attached electronic circuit board
WO2007029866A1 (en) * 2005-09-09 2007-03-15 Showa Denko K.K. Method for attachment of solder powder to electronic circuit board and soldered electronic circuit board
TW200728763A (en) * 2005-10-24 2007-08-01 Hitachi Maxell Optical thin film and manufacturing method thereof
JP4897697B2 (ja) * 2005-11-02 2012-03-14 パナソニック株式会社 導電性接着剤
US8721931B2 (en) * 2005-12-21 2014-05-13 E I Du Pont De Nemours And Company Paste for solar cell electrode, solar cell electrode manufacturing method, and solar cell
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
WO2007085448A1 (de) * 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum herstellen einer metallischen kontaktstruktur einer solarzelle
WO2007102988A2 (en) * 2006-03-06 2007-09-13 Tosoh Smd, Inc. Electronic device, method of manufacture of same and sputtering target
US20090008786A1 (en) 2006-03-06 2009-01-08 Tosoh Smd, Inc. Sputtering Target
DE102006013336A1 (de) * 2006-03-21 2007-09-27 Gp Solar Gmbh Kontaktierungsverfahren für Halbleitermaterial sowie Halbleiterbauelement
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
WO2007149835A2 (en) * 2006-06-20 2007-12-27 Konarka Technologies, Inc. Photovoltaic cells
US7600667B2 (en) * 2006-09-29 2009-10-13 Intel Corporation Method of assembling carbon nanotube reinforced solder caps
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
US20080230119A1 (en) 2007-03-22 2008-09-25 Hideki Akimoto Paste for back contact-type solar cell
US20090211626A1 (en) * 2008-02-26 2009-08-27 Hideki Akimoto Conductive paste and grid electrode for silicon solar cells
JP4948458B2 (ja) * 2008-03-19 2012-06-06 三洋電機株式会社 太陽電池の製造方法及び太陽電池
JP5094509B2 (ja) * 2008-03-31 2012-12-12 三洋電機株式会社 太陽電池モジュール
US7976734B2 (en) * 2008-09-10 2011-07-12 E.I. Du Pont De Nemours And Company Solar cell electrodes
JP5261110B2 (ja) * 2008-09-29 2013-08-14 三洋電機株式会社 太陽電池の製造方法及び太陽電池
DE102008051469A1 (de) * 2008-10-13 2010-04-15 Malibu Gmbh & Co. Kg Verfahren zum Kontaktieren von Dünnschicht-Solarzellen und Dünnschicht-Solarmodul
US20140335651A1 (en) * 2008-11-14 2014-11-13 Sichuan Yinhe Chemical Co., Ltd. Inks and pastes for solar cell fabrication
WO2010056826A1 (en) * 2008-11-14 2010-05-20 Applied Nanotech Holdings, Inc. Inks and pastes for solar cell fabrication
KR100909815B1 (ko) * 2008-12-08 2009-07-29 키스코홀딩스주식회사 접속함을 포함하는 광기전력 모듈
EP2393122B2 (de) * 2009-01-29 2018-12-26 Kyocera Corporation Photoelektrische umwandlungszelle, photoelektrisches umwandlungsmodul und verfahren zur herstellung einer photoelektrischen umwandlungszelle
KR20100088471A (ko) * 2009-01-30 2010-08-09 엘지디스플레이 주식회사 박막 태양전지의 제조방법
US20100264035A1 (en) * 2009-04-15 2010-10-21 Solopower, Inc. Reel-to-reel plating of conductive grids for flexible thin film solar cells
JP5465942B2 (ja) * 2009-07-16 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2011116303A1 (en) 2010-03-19 2011-09-22 Micropen Technologies Corporation Thermocouple device
DE102010026421A1 (de) * 2010-06-30 2012-01-05 Gebr. Schmid Gmbh & Co. Verfahren zur Herstellung eines Kontaktes einer Solarzelle und Solarzelle
JP5714280B2 (ja) * 2010-09-17 2015-05-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP6110311B2 (ja) * 2011-01-18 2017-04-05 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 導電性ペースト組成物ならびにそれらから形成される太陽電池電極および接点
DE102011001799B4 (de) * 2011-02-02 2018-01-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Halbleiterbauelements sowie Halbleiterbauelement
JP2014512699A (ja) * 2011-04-29 2014-05-22 アンバーウェーブ， インコーポレイテッド 薄膜はんだ接合
US20140158196A1 (en) * 2011-07-25 2014-06-12 Yoshiaki Kurihara Element and photovoltaic cell
WO2013069425A1 (ja) * 2011-11-09 2013-05-16 三菱電機株式会社 太陽電池モジュールおよびその製造方法
JP2013143426A (ja) * 2012-01-10 2013-07-22 Nitto Denko Corp 導電性接着シートおよび太陽電池モジュール
US20130240009A1 (en) * 2012-03-18 2013-09-19 The Boeing Company Metal Dendrite-free Solar Cell
JP6080247B2 (ja) * 2012-06-13 2017-02-15 デクセリアルズ株式会社 太陽電池モジュールの製造方法、太陽電池用導電性接着剤、太陽電池モジュール
PL225101B1 (pl) 2012-12-13 2017-02-28 Inst Tech Materiałów Elektronicznych Anoda do ogniw fotoelektrochemicznych i zastosowanie materiału eutektycznego
TW201436681A (zh) * 2012-12-18 2014-09-16 製陶技術股份有限公司 將基材上的金屬面預上銲料的方法
KR101796452B1 (ko) * 2012-12-31 2017-11-13 주식회사 아모그린텍 연성인쇄회로기판 및 그 제조 방법
KR101648242B1 (ko) * 2013-03-27 2016-08-12 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
US20150007868A1 (en) * 2013-07-08 2015-01-08 Tsmc Solar Ltd. Enhanced photovoltaic performance with modified bus bar region
JP6425945B2 (ja) * 2014-08-21 2018-11-21 東洋アルミニウム株式会社 インターコネクタ用光拡散部材及びこれを備える太陽電池用インターコネクタ、並びに太陽電池モジュール
CN104576767B (zh) * 2015-01-27 2017-01-25 苏州阿特斯阳光电力科技有限公司 一种用于太阳能电池组件的焊带
CN105957580A (zh) * 2016-06-22 2016-09-21 常州聚和新材料股份有限公司 一种晶硅太阳电池二次印刷用银浆组合

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846258A (en) * 1971-12-30 1974-11-05 Communications Satellite Corp Process for solder coating silicon solar cells
US3839727A (en) * 1973-06-25 1974-10-01 Ibm Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound
JPS54158187A (en) * 1978-06-02 1979-12-13 Matsushita Electric Ind Co Ltd Electrode material for semiconductor device
AU509758B2 (en) * 1977-07-29 1980-05-22 Matsushita Electric Industrial Co., Ltd. Ohmic electrode to semiconductor device
US4219448A (en) * 1978-06-08 1980-08-26 Bernd Ross Screenable contact structure and method for semiconductor devices
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device
JPS575066A (en) * 1980-06-13 1982-01-11 Hitachi Ltd Developing method of electrostatic latent image
CA1164734A (en) * 1980-07-11 1984-04-03 Michael Schneider Method for applying an anti-reflection coating to a solar cell
US4342796A (en) * 1980-09-10 1982-08-03 Advanced Chemical Technologies, Inc. Method for inhibiting corrosion of internal structural members of reinforced concrete
FR2515675A1 (fr) * 1981-11-05 1983-05-06 Comp Generale Electricite Encre conductrice pour prise de contact par serigraphie sur du silicium semi-conducteur et procede de realisation de contacts par serigraphie sur du silicium semi-conducteur
JPS5933868A (ja) * 1982-08-20 1984-02-23 Hitachi Ltd 半導体装置用電極材料
JPS6159551A (ja) * 1984-08-30 1986-03-27 Toshiba Corp プログラム定数配置方式
JPS6159549A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd ソフトウエア仕様形成方式
JPS628958A (ja) * 1985-07-05 1987-01-16 Konishiroku Photo Ind Co Ltd 感光材料集積装置
JPS6249676A (ja) * 1985-08-29 1987-03-04 Sharp Corp 太陽電池
JPS6311791A (ja) * 1986-06-30 1988-01-19 石川島播磨重工業株式会社 自動掘削制御方法
DE3708548A1 (de) * 1987-03-17 1988-09-29 Telefunken Electronic Gmbh Solarzellenmodul mit parallel und seriell angeordneten solarzellen
JPS6457762A (en) * 1987-08-28 1989-03-06 Kyocera Corp Photoelectric converting device
SE461172B (sv) * 1987-08-31 1990-01-15 Novenco Ab Vaerme- eller kylanordning att anbringas vid tak
US4852228A (en) * 1987-10-26 1989-08-01 Hoover Universal, Inc. Method of Manufacturing a vehicle seat with mold-in-face suspension system
US4880201A (en) * 1987-12-03 1989-11-14 Bostrom Seating, Inc. Constant natural frequency, mechanical spring seat suspension
JPH023555A (ja) * 1987-12-10 1990-01-09 Koito Mfg Co Ltd 車輌用前照灯の照射角度調整装置
JPH0693517B2 (ja) * 1988-07-13 1994-11-16 太陽誘電株式会社 非晶質半導体太陽電池
JPH02281742A (ja) * 1989-04-24 1990-11-19 Origin Electric Co Ltd 半導体デバイスおよび整列方法
JPH036867A (ja) * 1989-06-05 1991-01-14 Mitsubishi Electric Corp 光発電素子の電極構造、形成方法、及びその製造装置
JPH07118498B2 (ja) * 1989-06-15 1995-12-18 旭化成工業株式会社 電気的接合部
JPH03145166A (ja) 1989-10-31 1991-06-20 Tonen Corp 太陽電池のハンダ付け方法及び装置
US5296043A (en) * 1990-02-16 1994-03-22 Canon Kabushiki Kaisha Multi-cells integrated solar cell module and process for producing the same
US5074920A (en) * 1990-09-24 1991-12-24 Mobil Solar Energy Corporation Photovoltaic cells with improved thermal stability
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JPH0547812A (ja) * 1991-08-19 1993-02-26 Mitsubishi Electric Corp 半導体装置
US5380371A (en) * 1991-08-30 1995-01-10 Canon Kabushiki Kaisha Photoelectric conversion element and fabrication method thereof
US5268039A (en) * 1991-09-13 1993-12-07 United Solar Systems Corporation Photovoltaic device including shunt preventing layer and method for the deposition thereof
JP2938634B2 (ja) * 1991-10-08 1999-08-23 キヤノン株式会社 太陽電池モジュール
JP3156973B2 (ja) * 1991-10-18 2001-04-16 キヤノン株式会社 太陽電池
JP3145166B2 (ja) 1992-02-14 2001-03-12 日本碍子株式会社 抵抗調節型ヒーター
US5340409A (en) * 1992-04-23 1994-08-23 Canon Kabushiki Kaisha Photovoltaic element and method for forming the same
US5281684A (en) * 1992-04-30 1994-01-25 Motorola, Inc. Solder bumping of integrated circuit die
JPH0669524A (ja) * 1992-08-20 1994-03-11 Canon Inc 光発電素子
JP2716630B2 (ja) * 1992-10-13 1998-02-18 キヤノン株式会社 光起電力素子の集電電極及びその製造方法

Also Published As

Publication number Publication date
KR100190800B1 (en) 1999-06-01
EP0778624A2 (de) 1997-06-11
DE69332933D1 (de) 2003-06-05
DE69330925D1 (de) 2001-11-22
DE69332933T2 (de) 2004-05-13
EP0778624A3 (de) 1998-04-08
AU671639B2 (en) 1996-09-05
EP0778624B1 (de) 2003-05-02
EP0579199A1 (de) 1994-01-19
AU4195993A (en) 1994-01-20
ATE239303T1 (de) 2003-05-15
US5428249A (en) 1995-06-27
US6214636B1 (en) 2001-04-10
EP0579199B1 (de) 2001-10-17
KR940006293A (ko) 1994-03-23
DE69330925T2 (de) 2002-04-25

Similar Documents

Publication Publication Date Title
DE69330925D1 (de) Photovoltaische Vorrichtung und deren Herstellungsverfahren
EP0459773A3 (en) Semiconductor device and method for producing the same
EP0646979A4 (de) Material zur erzeugung elektrischer energie.
EP0489724A3 (en) Device and method of photoelectrically converting light into electrical signal
ES514202A0 (es) "una instalacion generadora de potencia electrica".
DE69132730D1 (de) Halbleiteranordnung mit verbesserter Leitungsführung
MY117343A (en) Electric circuit card and method of manufacture
DE3368812D1 (en) Method of producing metal electrodes of diversing thiekness for semiconductor devices, especially for power semiconductor devices such as thyristors
MA19304A1 (fr) Disositif de production d'energie electrique utilisant et controlant l'energie potentielle de la mer.
JPS5642114B2 (de)
MA19305A1 (fr) Dispositif de production d'energie electrique, sur une base flottante, utilisant et controlant l'energie potentielle de la mer.
JPS57162372A (en) Semiconductor radiation detector
JPS57106084A (en) Amorphous silicon diode
ES2193506T3 (es) Metodo y aparato para la aplicacion electrostatica en continuo de una sustancia en polvo sobre un sustrato.
JPS56164585A (en) Pickup device for solid-state image
JPS5739571A (en) Constant current diode
ES2033852T3 (es) Proteccion de la corrosion.
FR2569357B1 (fr) Procede et dispositif pour onduler des tubes metalliques et cable d'energie electrique fabrique selon le procede
FR2391499A1 (fr) Procede de formation d'image par electrophorese
JPS5570055A (en) Preparation of header for semiconductor device
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS53134298A (en) Electron beam generator
JPS5399883A (en) Manufacture of semiconductor device
JPS575366A (en) Semiconductor device and manufacture thereof
JPS5428584A (en) Manufacture of semiconductor laser element

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties