ATE211189T1 - Verfahren zur herstellung von gan kristallen mit hohem widerstand - Google Patents

Verfahren zur herstellung von gan kristallen mit hohem widerstand

Info

Publication number
ATE211189T1
ATE211189T1 AT98923236T AT98923236T ATE211189T1 AT E211189 T1 ATE211189 T1 AT E211189T1 AT 98923236 T AT98923236 T AT 98923236T AT 98923236 T AT98923236 T AT 98923236T AT E211189 T1 ATE211189 T1 AT E211189T1
Authority
AT
Austria
Prior art keywords
high resistance
producing high
gan crystals
resistance gan
metals
Prior art date
Application number
AT98923236T
Other languages
English (en)
Inventor
Boleslaw Lucznik
Tadeusz Suski
Miroslaw Wroblewski
Sylwester Porowski
Michal Bockowski
Izabella Grzegory
Stanislaw Krukowski
Michal Leszczynski
Original Assignee
Ct Badan Wysokocisnieniowych P
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ct Badan Wysokocisnieniowych P filed Critical Ct Badan Wysokocisnieniowych P
Application granted granted Critical
Publication of ATE211189T1 publication Critical patent/ATE211189T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
AT98923236T 1997-06-05 1998-06-03 Verfahren zur herstellung von gan kristallen mit hohem widerstand ATE211189T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL97320392A PL186905B1 (pl) 1997-06-05 1997-06-05 Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
PCT/PL1998/000023 WO1998055671A1 (en) 1997-06-05 1998-06-03 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS

Publications (1)

Publication Number Publication Date
ATE211189T1 true ATE211189T1 (de) 2002-01-15

Family

ID=20070025

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98923236T ATE211189T1 (de) 1997-06-05 1998-06-03 Verfahren zur herstellung von gan kristallen mit hohem widerstand

Country Status (7)

Country Link
US (1) US6273948B1 (de)
EP (1) EP0986655B1 (de)
JP (1) JP4198762B2 (de)
AT (1) ATE211189T1 (de)
DE (1) DE69803067T2 (de)
PL (1) PL186905B1 (de)
WO (1) WO1998055671A1 (de)

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US7057211B2 (en) 2001-10-26 2006-06-06 Ammono Sp. Zo.O Nitride semiconductor laser device and manufacturing method thereof
JP3910047B2 (ja) * 2001-11-20 2007-04-25 松下電器産業株式会社 半導体記憶装置
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
WO2003097906A1 (en) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
PL225427B1 (pl) 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
PL225422B1 (pl) 2002-06-26 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal
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US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
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US20080025902A1 (en) * 2004-04-27 2008-01-31 Arizona Board Of Regents, A Body Corpate Acting On Behalf Of Arizona State University Method To Synthesize Highly Luminescent Doped Metal Nitride Powders
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DE102004050806A1 (de) * 2004-10-16 2006-11-16 Azzurro Semiconductors Ag Verfahren zur Herstellung von (AI,Ga)N Einkristallen
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JP5187846B2 (ja) * 2006-03-23 2013-04-24 日本碍子株式会社 窒化物単結晶の製造方法および装置
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Family Cites Families (5)

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FR2313976A1 (fr) 1975-06-13 1977-01-07 Labo Electronique Physique Procede de fabrication de monocristaux de nitrure de gallium et monocristaux obtenus par la mise en oeuvre de ce procede
PL173917B1 (pl) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
WO1997013891A1 (en) * 1995-10-13 1997-04-17 Centrum Badan Wysokocisnieniowych METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES
JP3876473B2 (ja) * 1996-06-04 2007-01-31 住友電気工業株式会社 窒化物単結晶及びその製造方法
JPH107496A (ja) 1996-06-25 1998-01-13 Hitachi Cable Ltd 窒化物結晶の製造方法およびその装置

Also Published As

Publication number Publication date
US6273948B1 (en) 2001-08-14
DE69803067T2 (de) 2002-07-18
WO1998055671A1 (en) 1998-12-10
EP0986655B1 (de) 2001-12-19
PL186905B1 (pl) 2004-03-31
JP4198762B2 (ja) 2008-12-17
EP0986655A1 (de) 2000-03-22
PL320392A1 (en) 1998-12-07
DE69803067D1 (de) 2002-01-31
JP2002513375A (ja) 2002-05-08

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