ATE212725T1 - Verfahren zur herstellung eines halbleitersensors - Google Patents
Verfahren zur herstellung eines halbleitersensorsInfo
- Publication number
- ATE212725T1 ATE212725T1 AT96916597T AT96916597T ATE212725T1 AT E212725 T1 ATE212725 T1 AT E212725T1 AT 96916597 T AT96916597 T AT 96916597T AT 96916597 T AT96916597 T AT 96916597T AT E212725 T1 ATE212725 T1 AT E212725T1
- Authority
- AT
- Austria
- Prior art keywords
- wafer layer
- semiconductor sensor
- producing
- single crystal
- crystal silicon
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S73/00—Measuring and testing
- Y10S73/01—Vibration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Junction Field-Effect Transistors (AREA)
- Measuring Fluid Pressure (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/449,140 US6084257A (en) | 1995-05-24 | 1995-05-24 | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| US08/652,867 US6316796B1 (en) | 1995-05-24 | 1996-05-23 | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| PCT/US1996/007605 WO1996037784A1 (en) | 1995-05-24 | 1996-05-24 | Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE212725T1 true ATE212725T1 (de) | 2002-02-15 |
Family
ID=27035613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT96916597T ATE212725T1 (de) | 1995-05-24 | 1996-05-24 | Verfahren zur herstellung eines halbleitersensors |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US6316796B1 (de) |
| EP (1) | EP0829012B1 (de) |
| JP (1) | JP4477143B2 (de) |
| AT (1) | ATE212725T1 (de) |
| AU (1) | AU5929296A (de) |
| DE (1) | DE69618952T2 (de) |
| DK (1) | DK0829012T3 (de) |
| ES (1) | ES2167564T3 (de) |
| PT (1) | PT829012E (de) |
| WO (1) | WO1996037784A1 (de) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6018175A (en) * | 1998-09-03 | 2000-01-25 | Micron Technology, Inc. | Gapped-plate capacitor |
| JP3811304B2 (ja) * | 1998-11-25 | 2006-08-16 | 株式会社日立製作所 | 変位センサおよびその製造方法 |
| DE19964592B4 (de) * | 1999-04-16 | 2011-06-01 | Prüftechnik Dieter Busch AG | Schwingungsmeßgerät |
| US6257060B1 (en) * | 1999-06-22 | 2001-07-10 | Alliedsignal Inc. | Combined enhanced shock load capability and stress isolation structure for an improved performance silicon micro-machined accelerometer |
| US6211598B1 (en) * | 1999-09-13 | 2001-04-03 | Jds Uniphase Inc. | In-plane MEMS thermal actuator and associated fabrication methods |
| JP3540234B2 (ja) * | 2000-02-14 | 2004-07-07 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6628177B2 (en) * | 2000-08-24 | 2003-09-30 | The Regents Of The University Of Michigan | Micromechanical resonator device and micromechanical device utilizing same |
| JP2002090231A (ja) * | 2000-09-20 | 2002-03-27 | Kansai Tlo Kk | 半導体ピエゾ抵抗センサ |
| US6912759B2 (en) | 2001-07-20 | 2005-07-05 | Rosemount Aerospace Inc. | Method of manufacturing a thin piezo resistive pressure sensor |
| US20030218283A1 (en) * | 2002-02-08 | 2003-11-27 | Yasumura Kevin Y. | Damped micromechanical device |
| US6790699B2 (en) | 2002-07-10 | 2004-09-14 | Robert Bosch Gmbh | Method for manufacturing a semiconductor device |
| US7514283B2 (en) * | 2003-03-20 | 2009-04-07 | Robert Bosch Gmbh | Method of fabricating electromechanical device having a controlled atmosphere |
| US7038355B2 (en) * | 2003-04-03 | 2006-05-02 | Stmicroelectronics Sa | Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients |
| US7397097B2 (en) * | 2003-11-25 | 2008-07-08 | Stmicroelectronics, Inc. | Integrated released beam layer structure fabricated in trenches and manufacturing method thereof |
| US20050172717A1 (en) * | 2004-02-06 | 2005-08-11 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| JP2005265594A (ja) * | 2004-03-18 | 2005-09-29 | Denso Corp | 可動部を有する半導体デバイス |
| JP2005265795A (ja) * | 2004-03-22 | 2005-09-29 | Denso Corp | 半導体力学量センサ |
| US7192819B1 (en) * | 2004-07-20 | 2007-03-20 | National Semiconductor Corporation | Semiconductor sensor device using MEMS technology |
| US7037746B1 (en) | 2004-12-27 | 2006-05-02 | General Electric Company | Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane |
| US7353706B2 (en) | 2004-12-28 | 2008-04-08 | Stmicroelectronics, Inc. | Weighted released-beam sensor |
| US7179674B2 (en) * | 2004-12-28 | 2007-02-20 | Stmicroelectronics, Inc. | Bi-directional released-beam sensor |
| US7258010B2 (en) * | 2005-03-09 | 2007-08-21 | Honeywell International Inc. | MEMS device with thinned comb fingers |
| US7371601B2 (en) * | 2005-05-12 | 2008-05-13 | Delphi Technologies, Inc. | Piezoresistive sensing structure |
| TWI260940B (en) | 2005-06-17 | 2006-08-21 | Ind Tech Res Inst | Method for producing polymeric capacitive ultrasonic transducer |
| DE102006052630A1 (de) * | 2006-10-19 | 2008-04-24 | Robert Bosch Gmbh | Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements |
| DE102006059928A1 (de) | 2006-12-19 | 2008-08-21 | Robert Bosch Gmbh | Beschleunigungssensor mit Kammelektroden |
| DE102007002725A1 (de) * | 2007-01-18 | 2008-07-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gehäuse für in mobilen Anwendungen eingesetzte mikromechanische und mikrooptische Bauelemente |
| FR2917731B1 (fr) * | 2007-06-25 | 2009-10-23 | Commissariat Energie Atomique | Dispositif resonant a detection piezoresistive realise en technologies de surface |
| US9289137B2 (en) * | 2007-09-28 | 2016-03-22 | Volcano Corporation | Intravascular pressure devices incorporating sensors manufactured using deep reactive ion etching |
| FR2924856B1 (fr) * | 2007-12-11 | 2012-02-10 | Memscap | Condensateur a capacite variable comprenant un peigne mobile et un peigne fixe interdigites, accelerometre et gyrometre comprenant un tel condensateur |
| JP4508253B2 (ja) * | 2008-03-13 | 2010-07-21 | 国立大学法人 東京大学 | 3次元構造体およびその製造方法 |
| KR101001666B1 (ko) * | 2008-07-08 | 2010-12-15 | 광주과학기술원 | 마이크로 수직 구조체의 제조 방법 |
| JP5035184B2 (ja) * | 2008-09-02 | 2012-09-26 | 大日本印刷株式会社 | 一軸半導体加速度センサ |
| DE102008054553B4 (de) * | 2008-12-12 | 2022-02-17 | Robert Bosch Gmbh | Beschleunigungssensor |
| JP2010199214A (ja) * | 2009-02-24 | 2010-09-09 | Oki Semiconductor Co Ltd | Memsチューナブルキャパシタ |
| RU2481669C2 (ru) * | 2011-08-02 | 2013-05-10 | Федеральное государственное унитарное предприятие "Научно-производственное объединение им. С.А. Лавочкина" | Наклеиваемый полупроводниковый тензорезистор |
| RU2672033C1 (ru) * | 2017-11-13 | 2018-11-08 | Акционерное общество "Научно-исследовательский институт физических измерений" | Способ формирования областей кремния в объеме кремниевой пластины |
| US10859596B2 (en) * | 2018-07-20 | 2020-12-08 | Honeywell International Inc. | Mechanically-isolated in-plane pendulous vibrating beam accelerometer |
| JP6927530B2 (ja) * | 2018-11-16 | 2021-09-01 | 国立大学法人 東京大学 | 櫛歯型素子の製造方法 |
| US11703521B2 (en) * | 2020-12-04 | 2023-07-18 | Honeywell International Inc. | MEMS vibrating beam accelerometer with built-in test actuators |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5451490A (en) | 1977-09-30 | 1979-04-23 | Toshiba Corp | Semiconductor pressure converter |
| US4663648A (en) * | 1984-12-19 | 1987-05-05 | Texas Instruments Incorporated | Three dimensional structures of active and passive semiconductor components |
| US4730496A (en) | 1986-06-23 | 1988-03-15 | Rosemount Inc. | Capacitance pressure sensor |
| US5065978A (en) | 1988-04-27 | 1991-11-19 | Dragerwerk Aktiengesellschaft | Valve arrangement of microstructured components |
| DE68910641T2 (de) | 1988-09-23 | 1994-04-28 | Automotive Systems Lab | Selbsteichender Beschleunigungsmesser. |
| US5060526A (en) | 1989-05-30 | 1991-10-29 | Schlumberger Industries, Inc. | Laminated semiconductor sensor with vibrating element |
| US5238223A (en) | 1989-08-11 | 1993-08-24 | Robert Bosch Gmbh | Method of making a microvalve |
| DE3926647A1 (de) | 1989-08-11 | 1991-02-14 | Bosch Gmbh Robert | Verfahren zur herstellung eines mikroventils |
| US5132658A (en) | 1990-04-19 | 1992-07-21 | Sensym, Inc. | Micromachined silicon potentiometer responsive to pressure |
| DE4101575A1 (de) | 1991-01-21 | 1992-07-23 | Bosch Gmbh Robert | Mikroventil |
| US5400824A (en) | 1991-01-21 | 1995-03-28 | Robert Bosch Gmbh | Microvalve |
| JPH04268725A (ja) * | 1991-02-25 | 1992-09-24 | Canon Inc | 力学量検出センサおよびその製造方法 |
| US5235187A (en) | 1991-05-14 | 1993-08-10 | Cornell Research Foundation | Methods of fabricating integrated, aligned tunneling tip pairs |
| DE4133820A1 (de) | 1991-10-12 | 1993-04-15 | Bosch Gmbh Robert | Verfahren zur herstellung von halbleiterelementen |
| US5627427A (en) | 1991-12-09 | 1997-05-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathodes |
| US5198390A (en) | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
| US5393375A (en) | 1992-02-03 | 1995-02-28 | Cornell Research Foundation, Inc. | Process for fabricating submicron single crystal electromechanical structures |
| FR2688091B1 (fr) | 1992-02-28 | 1994-05-27 | Framatome Sa | Procede de controle et de reparation de la surface interne d'une piece tubulaire de traversee du couvercle de la cuve d'un reacteur nucleaire et dispositif pour la mise en óoeuvre de ce procede. |
| US5179499A (en) | 1992-04-14 | 1993-01-12 | Cornell Research Foundation, Inc. | Multi-dimensional precision micro-actuator |
| JP3367113B2 (ja) | 1992-04-27 | 2003-01-14 | 株式会社デンソー | 加速度センサ |
| JP2776142B2 (ja) | 1992-05-15 | 1998-07-16 | 株式会社日立製作所 | 加速度センサ |
| US5397904A (en) | 1992-07-02 | 1995-03-14 | Cornell Research Foundation, Inc. | Transistor microstructure |
| US5287082A (en) | 1992-07-02 | 1994-02-15 | Cornell Research Foundation, Inc. | Submicron isolated, released resistor structure |
| US5643803A (en) * | 1992-09-18 | 1997-07-01 | Nippondenso Co., Ltd. | Production method of a semiconductor dynamic sensor |
| FR2700065B1 (fr) | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant. |
| ATE269588T1 (de) | 1993-02-04 | 2004-07-15 | Cornell Res Foundation Inc | Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren |
| US5399415A (en) | 1993-02-05 | 1995-03-21 | Cornell Research Foundation, Inc. | Isolated tungsten microelectromechanical structures |
| US5386142A (en) | 1993-05-07 | 1995-01-31 | Kulite Semiconductor Products, Inc. | Semiconductor structures having environmentally isolated elements and method for making the same |
| US5426070A (en) | 1993-05-26 | 1995-06-20 | Cornell Research Foundation, Inc. | Microstructures and high temperature isolation process for fabrication thereof |
| US5563343A (en) | 1993-05-26 | 1996-10-08 | Cornell Research Foundation, Inc. | Microelectromechanical lateral accelerometer |
| US5610335A (en) | 1993-05-26 | 1997-03-11 | Cornell Research Foundation | Microelectromechanical lateral accelerometer |
| US5536988A (en) | 1993-06-01 | 1996-07-16 | Cornell Research Foundation, Inc. | Compound stage MEM actuator suspended for multidimensional motion |
| US5363021A (en) | 1993-07-12 | 1994-11-08 | Cornell Research Foundation, Inc. | Massively parallel array cathode |
| DE4417251A1 (de) | 1994-05-17 | 1995-11-23 | Bosch Gmbh Robert | Druckausgeglichenes Mikroventil |
| DE4422942B4 (de) | 1994-06-30 | 2004-07-08 | Robert Bosch Gmbh | Vorrichtung für den Antrieb eines Mikroventils |
| AU2683995A (en) | 1994-09-02 | 1996-03-27 | Stichting Voor De Technische Wetenschappen | Process for producing micromechanical structures by means of reactive ion etching |
| US5615143A (en) | 1994-09-19 | 1997-03-25 | Cornell Research Foundation, Inc. | Optomechanical terabit data storage system |
| JP3305516B2 (ja) | 1994-10-31 | 2002-07-22 | 株式会社東海理化電機製作所 | 静電容量式加速度センサ及びその製造方法 |
| US5565625A (en) | 1994-12-01 | 1996-10-15 | Analog Devices, Inc. | Sensor with separate actuator and sense fingers |
| US5628917A (en) | 1995-02-03 | 1997-05-13 | Cornell Research Foundation, Inc. | Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures |
| US5591679A (en) | 1995-04-12 | 1997-01-07 | Sensonor A/S | Sealed cavity arrangement method |
| US5587601A (en) | 1995-06-05 | 1996-12-24 | Kulite Semiconductor Products, Inc. | Support structure for a semiconductor pressure transducer |
| US5640133A (en) | 1995-06-23 | 1997-06-17 | Cornell Research Foundation, Inc. | Capacitance based tunable micromechanical resonators |
| WO1997004283A2 (en) | 1995-07-20 | 1997-02-06 | Cornell Research Foundation, Inc. | Microfabricated torsional cantilevers for sensitive force detection |
| US5637539A (en) | 1996-01-16 | 1997-06-10 | Cornell Research Foundation, Inc. | Vacuum microelectronic devices with multiple planar electrodes |
| US5994816A (en) | 1996-12-16 | 1999-11-30 | Mcnc | Thermal arched beam microelectromechanical devices and associated fabrication methods |
-
1996
- 1996-05-23 US US08/652,867 patent/US6316796B1/en not_active Expired - Lifetime
- 1996-05-24 JP JP53588596A patent/JP4477143B2/ja not_active Expired - Lifetime
- 1996-05-24 AU AU59292/96A patent/AU5929296A/en not_active Abandoned
- 1996-05-24 DE DE69618952T patent/DE69618952T2/de not_active Expired - Lifetime
- 1996-05-24 EP EP96916597A patent/EP0829012B1/de not_active Expired - Lifetime
- 1996-05-24 ES ES96916597T patent/ES2167564T3/es not_active Expired - Lifetime
- 1996-05-24 DK DK96916597T patent/DK0829012T3/da active
- 1996-05-24 WO PCT/US1996/007605 patent/WO1996037784A1/en not_active Ceased
- 1996-05-24 AT AT96916597T patent/ATE212725T1/de active
- 1996-05-24 PT PT96916597T patent/PT829012E/pt unknown
-
2001
- 2001-03-21 US US09/816,303 patent/US20010020726A1/en not_active Abandoned
- 2001-08-11 US US09/928,194 patent/US20030205739A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| ES2167564T3 (es) | 2002-05-16 |
| AU5929296A (en) | 1996-12-11 |
| EP0829012A1 (de) | 1998-03-18 |
| JP4477143B2 (ja) | 2010-06-09 |
| US6316796B1 (en) | 2001-11-13 |
| US20030205739A1 (en) | 2003-11-06 |
| PT829012E (pt) | 2002-07-31 |
| JPH11511291A (ja) | 1999-09-28 |
| WO1996037784A1 (en) | 1996-11-28 |
| DK0829012T3 (da) | 2002-03-18 |
| EP0829012B1 (de) | 2002-01-30 |
| US20010020726A1 (en) | 2001-09-13 |
| DE69618952T2 (de) | 2002-11-14 |
| DE69618952D1 (de) | 2002-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |