ATE212725T1 - Verfahren zur herstellung eines halbleitersensors - Google Patents

Verfahren zur herstellung eines halbleitersensors

Info

Publication number
ATE212725T1
ATE212725T1 AT96916597T AT96916597T ATE212725T1 AT E212725 T1 ATE212725 T1 AT E212725T1 AT 96916597 T AT96916597 T AT 96916597T AT 96916597 T AT96916597 T AT 96916597T AT E212725 T1 ATE212725 T1 AT E212725T1
Authority
AT
Austria
Prior art keywords
wafer layer
semiconductor sensor
producing
single crystal
crystal silicon
Prior art date
Application number
AT96916597T
Other languages
English (en)
Inventor
Kurt E Petersen
Nadim Maluf
Wendell Mcculley
John Logan
Erno Klaasen
Jan Mark Noworolski
Original Assignee
Lucas Novasensor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/449,140 external-priority patent/US6084257A/en
Application filed by Lucas Novasensor filed Critical Lucas Novasensor
Application granted granted Critical
Publication of ATE212725T1 publication Critical patent/ATE212725T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00Measuring and testing
    • Y10S73/01Vibration

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Glass Compositions (AREA)
AT96916597T 1995-05-24 1996-05-24 Verfahren zur herstellung eines halbleitersensors ATE212725T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/449,140 US6084257A (en) 1995-05-24 1995-05-24 Single crystal silicon sensor with high aspect ratio and curvilinear structures
US08/652,867 US6316796B1 (en) 1995-05-24 1996-05-23 Single crystal silicon sensor with high aspect ratio and curvilinear structures
PCT/US1996/007605 WO1996037784A1 (en) 1995-05-24 1996-05-24 Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method

Publications (1)

Publication Number Publication Date
ATE212725T1 true ATE212725T1 (de) 2002-02-15

Family

ID=27035613

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96916597T ATE212725T1 (de) 1995-05-24 1996-05-24 Verfahren zur herstellung eines halbleitersensors

Country Status (10)

Country Link
US (3) US6316796B1 (de)
EP (1) EP0829012B1 (de)
JP (1) JP4477143B2 (de)
AT (1) ATE212725T1 (de)
AU (1) AU5929296A (de)
DE (1) DE69618952T2 (de)
DK (1) DK0829012T3 (de)
ES (1) ES2167564T3 (de)
PT (1) PT829012E (de)
WO (1) WO1996037784A1 (de)

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US6628177B2 (en) * 2000-08-24 2003-09-30 The Regents Of The University Of Michigan Micromechanical resonator device and micromechanical device utilizing same
JP2002090231A (ja) * 2000-09-20 2002-03-27 Kansai Tlo Kk 半導体ピエゾ抵抗センサ
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US9289137B2 (en) * 2007-09-28 2016-03-22 Volcano Corporation Intravascular pressure devices incorporating sensors manufactured using deep reactive ion etching
FR2924856B1 (fr) * 2007-12-11 2012-02-10 Memscap Condensateur a capacite variable comprenant un peigne mobile et un peigne fixe interdigites, accelerometre et gyrometre comprenant un tel condensateur
JP4508253B2 (ja) * 2008-03-13 2010-07-21 国立大学法人 東京大学 3次元構造体およびその製造方法
KR101001666B1 (ko) * 2008-07-08 2010-12-15 광주과학기술원 마이크로 수직 구조체의 제조 방법
JP5035184B2 (ja) * 2008-09-02 2012-09-26 大日本印刷株式会社 一軸半導体加速度センサ
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US10859596B2 (en) * 2018-07-20 2020-12-08 Honeywell International Inc. Mechanically-isolated in-plane pendulous vibrating beam accelerometer
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Also Published As

Publication number Publication date
ES2167564T3 (es) 2002-05-16
AU5929296A (en) 1996-12-11
EP0829012A1 (de) 1998-03-18
JP4477143B2 (ja) 2010-06-09
US6316796B1 (en) 2001-11-13
US20030205739A1 (en) 2003-11-06
PT829012E (pt) 2002-07-31
JPH11511291A (ja) 1999-09-28
WO1996037784A1 (en) 1996-11-28
DK0829012T3 (da) 2002-03-18
EP0829012B1 (de) 2002-01-30
US20010020726A1 (en) 2001-09-13
DE69618952T2 (de) 2002-11-14
DE69618952D1 (de) 2002-03-14

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