ATE223109T1 - Metall-halbleiter feldeffekttransistor hoher leistung und hoher frequenz, hergestellt aus siliziumcarbid - Google Patents

Metall-halbleiter feldeffekttransistor hoher leistung und hoher frequenz, hergestellt aus siliziumcarbid

Info

Publication number
ATE223109T1
ATE223109T1 AT92305417T AT92305417T ATE223109T1 AT E223109 T1 ATE223109 T1 AT E223109T1 AT 92305417 T AT92305417 T AT 92305417T AT 92305417 T AT92305417 T AT 92305417T AT E223109 T1 ATE223109 T1 AT E223109T1
Authority
AT
Austria
Prior art keywords
epitaxial layer
silicon carbide
effect transistor
semiconductor field
high frequency
Prior art date
Application number
AT92305417T
Other languages
English (en)
Inventor
John W Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE223109T1 publication Critical patent/ATE223109T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
AT92305417T 1991-06-14 1992-06-12 Metall-halbleiter feldeffekttransistor hoher leistung und hoher frequenz, hergestellt aus siliziumcarbid ATE223109T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/715,560 US5270554A (en) 1991-06-14 1991-06-14 High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide

Publications (1)

Publication Number Publication Date
ATE223109T1 true ATE223109T1 (de) 2002-09-15

Family

ID=24874555

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92305417T ATE223109T1 (de) 1991-06-14 1992-06-12 Metall-halbleiter feldeffekttransistor hoher leistung und hoher frequenz, hergestellt aus siliziumcarbid

Country Status (6)

Country Link
US (1) US5270554A (de)
EP (1) EP0518683B1 (de)
JP (1) JP3499884B2 (de)
AT (1) ATE223109T1 (de)
DE (1) DE69232748T2 (de)
ES (1) ES2181671T3 (de)

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Also Published As

Publication number Publication date
DE69232748T2 (de) 2003-08-07
JP3499884B2 (ja) 2004-02-23
ES2181671T3 (es) 2003-03-01
EP0518683A1 (de) 1992-12-16
EP0518683B1 (de) 2002-08-28
DE69232748D1 (de) 2002-10-02
JPH05175239A (ja) 1993-07-13
US5270554A (en) 1993-12-14

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