ATE229096T1 - Wirbelschichtreaktor zur abscheidung eines materiales auf einer oberfläche mittels cvd und verfahren zur herstellung eines beschichteten substrats mit diesem reaktor - Google Patents

Wirbelschichtreaktor zur abscheidung eines materiales auf einer oberfläche mittels cvd und verfahren zur herstellung eines beschichteten substrats mit diesem reaktor

Info

Publication number
ATE229096T1
ATE229096T1 AT98920901T AT98920901T ATE229096T1 AT E229096 T1 ATE229096 T1 AT E229096T1 AT 98920901 T AT98920901 T AT 98920901T AT 98920901 T AT98920901 T AT 98920901T AT E229096 T1 ATE229096 T1 AT E229096T1
Authority
AT
Austria
Prior art keywords
reactor
substrate
cvd
depositing
producing
Prior art date
Application number
AT98920901T
Other languages
English (en)
Inventor
Angel Sanjurjo
Kai-Hung Lau
David M Lowe
Liqiang Jiang
Original Assignee
Stanford Res Inst Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanford Res Inst Int filed Critical Stanford Res Inst Int
Application granted granted Critical
Publication of ATE229096T1 publication Critical patent/ATE229096T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1836—Heating and cooling the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00026—Controlling or regulating the heat exchange system
    • B01J2208/00035—Controlling or regulating the heat exchange system involving measured parameters
    • B01J2208/00044—Temperature measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
AT98920901T 1997-04-30 1998-04-28 Wirbelschichtreaktor zur abscheidung eines materiales auf einer oberfläche mittels cvd und verfahren zur herstellung eines beschichteten substrats mit diesem reaktor ATE229096T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/847,145 US5855678A (en) 1997-04-30 1997-04-30 Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
PCT/US1998/008566 WO1998049366A1 (en) 1997-04-30 1998-04-28 Fluidized bed reactor to deposit a material on a surface by chemical vapour deposition, and methods of forming a coated substrate therewith

Publications (1)

Publication Number Publication Date
ATE229096T1 true ATE229096T1 (de) 2002-12-15

Family

ID=25299883

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98920901T ATE229096T1 (de) 1997-04-30 1998-04-28 Wirbelschichtreaktor zur abscheidung eines materiales auf einer oberfläche mittels cvd und verfahren zur herstellung eines beschichteten substrats mit diesem reaktor

Country Status (6)

Country Link
US (1) US5855678A (de)
EP (1) EP0979316B1 (de)
JP (1) JP2001512533A (de)
AT (1) ATE229096T1 (de)
DE (1) DE69809899T2 (de)
WO (1) WO1998049366A1 (de)

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FI118158B (sv) * 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
US6464912B1 (en) * 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
EP1165852A4 (de) * 1999-02-08 2003-05-02 Quality Heat Technologies Pty Oberflächenbehandlungsverfahren und -vorrichtung
KR100447248B1 (ko) * 2002-01-22 2004-09-07 주성엔지니어링(주) Ｉｃｐ 에쳐용 가스 확산판
JP2004071970A (ja) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd 太陽電池用シリコン基板の製造方法およびその製造システム
DE10260745A1 (de) * 2002-12-23 2004-07-01 Outokumpu Oyj Verfahren und Anlage zur thermischen Behandlung von körnigen Feststoffen
AU2004280559A1 (en) * 2003-09-19 2005-04-21 Sri International Methods and apparatuses for producing metallic compositions via reduction of metal halides
WO2005088646A1 (en) * 2004-03-01 2005-09-22 Pebble Bed Modular Reactor (Proprietary) Limited Nuclear fuel provided with a coating
CN101432453B (zh) * 2006-04-28 2011-12-28 Sri国际公司 用于生产固结的和纯化的材料的方法
EP2257655A2 (de) * 2008-03-05 2010-12-08 SRI International Substrate für siliciumsolarzellen und herstellungsverfahren dafür
US8377408B2 (en) 2010-04-20 2013-02-19 High Temperature Physics, Llc Process for the production of carbon nanoparticles and sequestration of carbon
US8420042B2 (en) 2010-09-21 2013-04-16 High Temperature Physics, Llc Process for the production of carbon graphenes and other nanomaterials
US9260308B2 (en) 2011-04-19 2016-02-16 Graphene Technologies, Inc. Nanomaterials and process for making the same
CN102337517A (zh) * 2011-05-03 2012-02-01 中国科学院福建物质结构研究所 氧化物薄膜生长用金属有机物化学气相沉积反应室
CN102888593B (zh) * 2011-07-20 2014-07-02 航天材料及工艺研究所 一种在石墨球体表面包覆热解碳的设备及气相沉碳方法
US9587993B2 (en) * 2012-11-06 2017-03-07 Rec Silicon Inc Probe assembly for a fluid bed reactor
CN109477223A (zh) 2016-06-20 2019-03-15 迪布洛克涂料有限公司 涂覆方法和涂覆的材料
AU2017280091A1 (en) 2016-06-20 2018-11-22 Othrys Technologies Pty Ltd Coating of particulate substrates
CN111283215B (zh) * 2020-02-24 2021-06-11 北京科技大学 一种气-固流化制备无氧钝化钛及钛合金粉末制品的方法
FR3126231B1 (fr) * 2021-08-20 2023-11-17 Safran Ceram Dispositif pour le dépôt chimique en phase vapeur

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JPS5523025A (en) * 1978-08-04 1980-02-19 Hitachi Ltd Production of polycrystal silicon
JPS57145021A (en) * 1981-02-27 1982-09-07 Shin Etsu Chem Co Ltd Preparation of silicon granule
JPS57175797A (en) * 1981-04-22 1982-10-28 Hitachi Ltd Epitaxial growth under reduced pressure
JPS59107917A (ja) * 1982-12-07 1984-06-22 Denki Kagaku Kogyo Kk 多結晶シリコンの製造装置
US4585560A (en) * 1983-12-19 1986-04-29 University Of South Alabama, A Public Body Corporate Inhibition of inorganic and biological CaCO3 deposition by a polysaccharide fraction obtained from CaCO3 -forming organisms
US4574093A (en) * 1983-12-30 1986-03-04 At&T Bell Laboratories Deposition technique
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US4748052A (en) * 1987-08-21 1988-05-31 Ethyl Corporation Fluid bed reactor and process
US5139762A (en) * 1987-12-14 1992-08-18 Advanced Silicon Materials, Inc. Fluidized bed for production of polycrystalline silicon
US5227195A (en) * 1989-04-04 1993-07-13 Sri International Low temperature method of forming materials using one or more metal reactants and a halogen-containing reactant to form one or more reactive intermediates
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US5054420A (en) * 1989-09-29 1991-10-08 Alcan International Limited Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics
US5171734A (en) * 1991-04-22 1992-12-15 Sri International Coating a substrate in a fluidized bed maintained at a temperature below the vaporization temperature of the resulting coating composition
WO1996041036A2 (en) * 1995-06-07 1996-12-19 Advanced Silicon Materials, Inc. Method and apparatus for silicon deposition in a fluidized-bed reactor

Also Published As

Publication number Publication date
US5855678A (en) 1999-01-05
EP0979316B1 (de) 2002-12-04
WO1998049366A1 (en) 1998-11-05
EP0979316A1 (de) 2000-02-16
DE69809899T2 (de) 2003-08-28
JP2001512533A (ja) 2001-08-21
DE69809899D1 (de) 2003-01-16

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