ATE161589T1 - Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren - Google Patents

Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren

Info

Publication number
ATE161589T1
ATE161589T1 AT95101918T AT95101918T ATE161589T1 AT E161589 T1 ATE161589 T1 AT E161589T1 AT 95101918 T AT95101918 T AT 95101918T AT 95101918 T AT95101918 T AT 95101918T AT E161589 T1 ATE161589 T1 AT E161589T1
Authority
AT
Austria
Prior art keywords
alkoxy
carrier gas
precursor
deposing
water vapor
Prior art date
Application number
AT95101918T
Other languages
English (en)
Inventor
Terence Clark
Richard Cruse
Stephen Rohman
Robert Mininni
Original Assignee
Enichem Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enichem Spa filed Critical Enichem Spa
Application granted granted Critical
Publication of ATE161589T1 publication Critical patent/ATE161589T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
AT95101918T 1994-03-07 1995-02-13 Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren ATE161589T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/206,857 US5424095A (en) 1994-03-07 1994-03-07 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors

Publications (1)

Publication Number Publication Date
ATE161589T1 true ATE161589T1 (de) 1998-01-15

Family

ID=22768265

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95101918T ATE161589T1 (de) 1994-03-07 1995-02-13 Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren

Country Status (5)

Country Link
US (1) US5424095A (de)
EP (1) EP0671483B1 (de)
AT (1) ATE161589T1 (de)
DE (1) DE69501274T2 (de)
ES (1) ES2111972T3 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2721622B1 (fr) * 1994-06-24 1997-11-21 Inst Francais Du Petrole Méthode de passivation de pièces métalliques en super-alliage à base de nickel et de fer.
KR100214269B1 (ko) * 1996-06-27 1999-08-02 김영환 반도체 소자의 보호막 제조방법
TW416100B (en) * 1997-07-02 2000-12-21 Applied Materials Inc Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
KR100535730B1 (ko) * 1997-10-08 2005-12-09 쉘 인터내셔날 리서치 마챠피즈 비.브이. 무화염 연소 공정 히터
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
FR2798939B1 (fr) 1999-09-24 2001-11-09 Atofina Reduction du cokage dans les reacteurs de craquage
US6630244B1 (en) * 2001-03-23 2003-10-07 Delavan Inc. Carbon resistant surface coating
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7446217B2 (en) * 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7601860B2 (en) * 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
US7579496B2 (en) 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
AU2006223449A1 (en) * 2005-03-10 2006-09-21 Shell Internationale Research Maatschappij B.V. Method of starting up a direct heating system for the flameless combustion of fuel and direct heating of a process fluid
RU2007137495A (ru) * 2005-03-10 2009-04-20 Шелл Интернэшнл Рисерч Маатсхаппий Б.В. (NL) Система теплопередачи для сгорания топлива и нагревания технологической текучей среды и способ ее использования
RU2384791C2 (ru) * 2005-03-10 2010-03-20 Шелл Интернэшнл Рисерч Маатсхаппий Б.В. Многотрубная система переноса тепла для сжигания топлива и нагревания технологической текучей среды и ее использование
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
AR067577A1 (es) * 2007-07-20 2009-10-14 Shell Int Research Un calentador de combustion no inflamable y metodo para proporcionar calor a un conducto del proceso
KR20100061449A (ko) * 2007-07-20 2010-06-07 셀 인터나쵸나아레 레사아치 마아츠샤피 비이부이 무화염 연소 히터
US8057707B2 (en) * 2008-03-17 2011-11-15 Arkems Inc. Compositions to mitigate coke formation in steam cracking of hydrocarbons
CA2724389A1 (en) * 2010-12-08 2012-06-08 Nova Chemicals Corporation In situ removal of iron complexes during cracking
EP2714960B1 (de) 2011-06-03 2018-02-28 Versum Materials US, LLC Zusammensetzungen und verfahren zur ablagerung von kohlenstoffdotierten siliciumhaltigen filmen
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
US20150275355A1 (en) * 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
SG11201703196WA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing films
US10703915B2 (en) 2016-09-19 2020-07-07 Versum Materials Us, Llc Compositions and methods for the deposition of silicon oxide films
KR102698026B1 (ko) * 2016-09-28 2024-08-21 삼성전자주식회사 유전막 형성 방법 및 반도체 장치의 제조 방법
US10464953B2 (en) 2016-10-14 2019-11-05 Versum Materials Us, Llc Carbon bridged aminosilane compounds for high growth rate silicon-containing films
US12057310B2 (en) 2018-05-22 2024-08-06 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11177127B2 (en) 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
EP4448835A4 (de) * 2022-01-26 2026-03-04 Versum Mat Us Llc Halogenid-funktionalisierte cyclotrisilazane als vorstufen zur abscheidung von siliziumhaltigen filmen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1483144A (en) * 1975-04-07 1977-08-17 British Petroleum Co Protective films
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
US5208069A (en) * 1991-10-28 1993-05-04 Istituto Guido Donegani S.P.A. Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus prepared thereby, and method of utilizing apparatus prepared thereby
DE4212501C1 (en) * 1992-04-14 1993-08-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Deposition of silicon nitride polymer layer on substrate - using linear or cyclic silazane in gas, giving good quality and high coating ratio

Also Published As

Publication number Publication date
EP0671483B1 (de) 1997-12-29
EP0671483A1 (de) 1995-09-13
DE69501274T2 (de) 1998-04-16
ES2111972T3 (es) 1998-03-16
US5424095A (en) 1995-06-13
DE69501274D1 (de) 1998-02-05

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