ATE161589T1 - Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren - Google Patents

Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren

Info

Publication number
ATE161589T1
ATE161589T1 AT95101918T AT95101918T ATE161589T1 AT E161589 T1 ATE161589 T1 AT E161589T1 AT 95101918 T AT95101918 T AT 95101918T AT 95101918 T AT95101918 T AT 95101918T AT E161589 T1 ATE161589 T1 AT E161589T1
Authority
AT
Austria
Prior art keywords
alkoxy
carrier gas
precursor
deposing
water vapor
Prior art date
Application number
AT95101918T
Other languages
English (en)
Inventor
Terence Clark
Richard Cruse
Stephen Rohman
Robert Mininni
Original Assignee
Enichem Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enichem Spa filed Critical Enichem Spa
Application granted granted Critical
Publication of ATE161589T1 publication Critical patent/ATE161589T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
AT95101918T 1994-03-07 1995-02-13 Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren ATE161589T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/206,857 US5424095A (en) 1994-03-07 1994-03-07 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors

Publications (1)

Publication Number Publication Date
ATE161589T1 true ATE161589T1 (de) 1998-01-15

Family

ID=22768265

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95101918T ATE161589T1 (de) 1994-03-07 1995-02-13 Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren

Country Status (5)

Country Link
US (1) US5424095A (de)
EP (1) EP0671483B1 (de)
AT (1) ATE161589T1 (de)
DE (1) DE69501274T2 (de)
ES (1) ES2111972T3 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2721622B1 (fr) * 1994-06-24 1997-11-21 Inst Francais Du Petrole Méthode de passivation de pièces métalliques en super-alliage à base de nickel et de fer.
KR100214269B1 (ko) * 1996-06-27 1999-08-02 김영환 반도체 소자의 보호막 제조방법
TW416100B (en) * 1997-07-02 2000-12-21 Applied Materials Inc Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
DK1021682T3 (da) * 1997-10-08 2002-06-17 Shell Int Research Flammeløs forbrændingsprocesvarmeindretning
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
FR2798939B1 (fr) 1999-09-24 2001-11-09 Atofina Reduction du cokage dans les reacteurs de craquage
US6630244B1 (en) * 2001-03-23 2003-10-07 Delavan Inc. Carbon resistant surface coating
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7446217B2 (en) * 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7579496B2 (en) 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US7601860B2 (en) * 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
JP5000633B2 (ja) * 2005-03-10 2012-08-15 シエル・インターナシヨネイル・リサーチ・マーチヤツピイ・ベー・ウイ 燃料の無炎燃焼用直接加熱システムの始動方法及びプロセス流体の直接加熱
BRPI0608336B1 (pt) * 2005-03-10 2018-09-11 Shell Int Research sistema de processamento, sistema de aquecimento direto de quatro tubos para queima de um combustível e aquecimento direto de um fluido de processamento e método
BRPI0608335A2 (pt) * 2005-03-10 2009-12-01 Shell Int Research sistema de processamento e processo para o aquecimento direto de um fluido de processamento pela queima sem chama de um combustìvel
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
WO2009014979A2 (en) * 2007-07-20 2009-01-29 Shell Oil Company A flameless combustion heater
RU2010106143A (ru) * 2007-07-20 2011-08-27 Шелл Интернэшнл Рисерч Маатсхаппий Б.В. (NL) Беспламенный бензиновый отопитель
US8057707B2 (en) * 2008-03-17 2011-11-15 Arkems Inc. Compositions to mitigate coke formation in steam cracking of hydrocarbons
CA2724389A1 (en) * 2010-12-08 2012-06-08 Nova Chemicals Corporation In situ removal of iron complexes during cracking
JP5785325B2 (ja) 2011-06-03 2015-09-30 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 炭素ドープケイ素含有膜を堆積するための組成物及び方法
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US20150275355A1 (en) * 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
SG11201703195QA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing film
US10703915B2 (en) 2016-09-19 2020-07-07 Versum Materials Us, Llc Compositions and methods for the deposition of silicon oxide films
KR102698026B1 (ko) * 2016-09-28 2024-08-21 삼성전자주식회사 유전막 형성 방법 및 반도체 장치의 제조 방법
US10464953B2 (en) 2016-10-14 2019-11-05 Versum Materials Us, Llc Carbon bridged aminosilane compounds for high growth rate silicon-containing films
US12057310B2 (en) 2018-05-22 2024-08-06 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11177127B2 (en) * 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
WO2023147382A1 (en) * 2022-01-26 2023-08-03 Versum Materials Us, Llc Halide-functionalized cyclotrisilazanes as precursors for deposition of silicon-containing films

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1483144A (en) * 1975-04-07 1977-08-17 British Petroleum Co Protective films
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
US5208069A (en) * 1991-10-28 1993-05-04 Istituto Guido Donegani S.P.A. Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus prepared thereby, and method of utilizing apparatus prepared thereby
DE4212501C1 (en) * 1992-04-14 1993-08-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Deposition of silicon nitride polymer layer on substrate - using linear or cyclic silazane in gas, giving good quality and high coating ratio

Also Published As

Publication number Publication date
US5424095A (en) 1995-06-13
DE69501274D1 (de) 1998-02-05
EP0671483A1 (de) 1995-09-13
ES2111972T3 (es) 1998-03-16
EP0671483B1 (de) 1997-12-29
DE69501274T2 (de) 1998-04-16

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