ATE233017T1 - Elektroden-klemmvorrichtung und verfahren zu deren zusammenbau und verwendung - Google Patents

Elektroden-klemmvorrichtung und verfahren zu deren zusammenbau und verwendung

Info

Publication number
ATE233017T1
ATE233017T1 AT96915875T AT96915875T ATE233017T1 AT E233017 T1 ATE233017 T1 AT E233017T1 AT 96915875 T AT96915875 T AT 96915875T AT 96915875 T AT96915875 T AT 96915875T AT E233017 T1 ATE233017 T1 AT E233017T1
Authority
AT
Austria
Prior art keywords
electrode
clamping
provides
clamping member
assembly
Prior art date
Application number
AT96915875T
Other languages
English (en)
Inventor
Eric H Lenz
Michael L Calvisi
Ivo A Miller
Robert A Frazier
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE233017T1 publication Critical patent/ATE233017T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Chemical Vapour Deposition (AREA)
AT96915875T 1995-05-19 1996-05-17 Elektroden-klemmvorrichtung und verfahren zu deren zusammenbau und verwendung ATE233017T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/445,292 US5569356A (en) 1995-05-19 1995-05-19 Electrode clamping assembly and method for assembly and use thereof
PCT/US1996/007149 WO1996036984A1 (en) 1995-05-19 1996-05-17 Electrode clamping assembly and method for assembly and use thereof

Publications (1)

Publication Number Publication Date
ATE233017T1 true ATE233017T1 (de) 2003-03-15

Family

ID=23768348

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96915875T ATE233017T1 (de) 1995-05-19 1996-05-17 Elektroden-klemmvorrichtung und verfahren zu deren zusammenbau und verwendung

Country Status (11)

Country Link
US (1) US5569356A (de)
EP (1) EP0826229B1 (de)
JP (1) JP3930048B2 (de)
KR (1) KR100399566B1 (de)
CN (1) CN1103113C (de)
AT (1) ATE233017T1 (de)
AU (1) AU5753296A (de)
CA (1) CA2220678A1 (de)
DE (1) DE69626281T2 (de)
RU (1) RU2163044C2 (de)
WO (1) WO1996036984A1 (de)

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
JP3728021B2 (ja) * 1996-06-28 2005-12-21 日清紡績株式会社 プラズマエッチング電極及びその製造方法
US6391216B1 (en) * 1997-09-22 2002-05-21 National Research Institute For Metals Method for reactive ion etching and apparatus therefor
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6117786A (en) * 1998-05-05 2000-09-12 Lam Research Corporation Method for etching silicon dioxide using fluorocarbon gas chemistry
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6696366B1 (en) 1998-08-17 2004-02-24 Lam Research Corporation Technique for etching a low capacitance dielectric layer
US6050216A (en) * 1998-08-21 2000-04-18 M.E.C. Technology, Inc. Showerhead electrode for plasma processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6372151B1 (en) 1999-07-27 2002-04-16 Applied Materials, Inc. Storage poly process without carbon contamination
US6565759B1 (en) * 1999-08-16 2003-05-20 Vanguard International Semiconductor Corporation Etching process
US6227140B1 (en) 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6408786B1 (en) 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6237528B1 (en) 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6170432B1 (en) 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6383931B1 (en) 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
JP4444437B2 (ja) * 2000-03-17 2010-03-31 キヤノンアネルバ株式会社 プラズマ処理装置
DE20005365U1 (de) 2000-03-23 2000-11-23 VenTec Gesellschaft für Venturekapital und Unternehmensberatung, 57078 Siegen Elektrodenanordnung für Plasmaätzanlagen hoher Leistung
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
AU2001273537A1 (en) * 2000-07-20 2002-02-05 Tokyo Electron Limited Improved electrode for plasma processing system
US6753498B2 (en) 2000-07-20 2004-06-22 Tokyo Electron Limited Automated electrode replacement apparatus for a plasma processing system
WO2002008486A2 (en) * 2000-07-20 2002-01-31 Tokyo Electon Limited Electrode apparatus and method for plasma processing
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6790242B2 (en) 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
US6597003B2 (en) * 2001-07-12 2003-07-22 Axcelis Technologies, Inc. Tunable radiation source providing a VUV wavelength planar illumination pattern for processing semiconductor wafers
US20030106644A1 (en) * 2001-07-19 2003-06-12 Sirkis Murray D. Electrode apparatus and method for plasma processing
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
US6786175B2 (en) 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
JP3876167B2 (ja) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 洗浄方法および半導体装置の製造方法
CN100382230C (zh) * 2002-04-17 2008-04-16 兰姆研究公司 硅电极及其生产方法、生产硅部件及加工半导体晶片方法
JP4847009B2 (ja) * 2002-05-23 2011-12-28 ラム リサーチ コーポレーション 半導体処理プラズマ反応器用の多部品電極および多部品電極の一部を取り換える方法
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US6838012B2 (en) 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US20050011447A1 (en) * 2003-07-14 2005-01-20 Tokyo Electron Limited Method and apparatus for delivering process gas to a process chamber
US20050050708A1 (en) * 2003-09-04 2005-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded fastener apparatus and method for preventing particle contamination
KR101202151B1 (ko) * 2003-09-10 2012-11-15 외를리콘 솔라 아게, 트뤼프바흐 직사각형 대면적 기판 처리용 고주파 플라즈마 반응기의전압 불균일성 보상 방법
KR100513404B1 (ko) * 2003-12-08 2005-09-09 삼성전자주식회사 반도체 제조설비 관리시스템의 제어방법
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20050220568A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for fastening components used in plasma processing
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US20060108069A1 (en) * 2004-11-19 2006-05-25 Samsung Electronics Co., Ltd. Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US9520276B2 (en) 2005-06-22 2016-12-13 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
CN100373540C (zh) * 2005-12-08 2008-03-05 北京北方微电子基地设备工艺研究中心有限责任公司 用于半导体设备的下电极组件
US7743730B2 (en) * 2005-12-21 2010-06-29 Lam Research Corporation Apparatus for an optimized plasma chamber grounded electrode assembly
US8789493B2 (en) 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US7514125B2 (en) * 2006-06-23 2009-04-07 Applied Materials, Inc. Methods to improve the in-film defectivity of PECVD amorphous carbon films
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
JP5348848B2 (ja) * 2007-03-28 2013-11-20 東京エレクトロン株式会社 プラズマ処理装置
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
KR101553422B1 (ko) * 2007-12-19 2015-09-15 램 리써치 코포레이션 플라즈마 처리 장치를 위한 복합 샤워헤드 전극 어셈블리
US8449786B2 (en) * 2007-12-19 2013-05-28 Lam Research Corporation Film adhesive for semiconductor vacuum processing apparatus
US8276898B2 (en) 2008-06-11 2012-10-02 Lam Research Corporation Electrode transporter and fixture sets incorporating the same
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
JP5544907B2 (ja) * 2010-02-04 2014-07-09 東京エレクトロン株式会社 ガスシャワー用の構造体及び基板処理装置
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
US20120231181A1 (en) * 2011-03-09 2012-09-13 Applied Materials, Inc. Insulation coverage of cvd electrode
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
JP6068849B2 (ja) * 2012-07-17 2017-01-25 東京エレクトロン株式会社 上部電極、及びプラズマ処理装置
US10480077B2 (en) * 2013-03-13 2019-11-19 Applied Materials, Inc. PEALD apparatus to enable rapid cycling
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10177024B2 (en) 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
US9738975B2 (en) 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making
CN106937473B (zh) * 2015-12-31 2019-02-19 中微半导体设备(上海)有限公司 一种电感耦合等离子处理器
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
CN110484895B (zh) * 2018-05-14 2021-01-08 北京北方华创微电子装备有限公司 腔室组件及反应腔室
CN109767968B (zh) * 2018-12-17 2021-06-08 北京北方华创微电子装备有限公司 下电极结构及反应腔室
CN111524775B (zh) * 2019-02-01 2023-03-10 中微半导体设备(上海)股份有限公司 一种等离子处理器以及用于等离子处理器的上电极组件
CN110332311B (zh) * 2019-06-20 2020-04-24 中国航发贵州黎阳航空动力有限公司 一种b形橡胶密封结构的装配方法
CN112259436B (zh) * 2020-11-16 2025-06-20 上海谙邦半导体设备有限公司 一种等离子体处理装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200761A (ja) * 1983-04-28 1984-11-14 Toshiba Corp スパツタリングタ−ゲツト支持装置
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
EP0210605B1 (de) * 1985-07-25 1991-02-27 Texas Instruments Incorporated Verfahren und Gerät zur Plasmabehandlung
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
JPH01279784A (ja) * 1988-05-02 1989-11-10 Tokyo Electron Ltd エッチング装置
JPH0273624A (ja) * 1988-09-08 1990-03-13 Fujitsu Ltd Ｃｖｄ用ガス導入装置
JP2688243B2 (ja) * 1988-11-25 1997-12-08 東京エレクトロン株式会社 電極構造体
JPH02268427A (ja) * 1989-04-11 1990-11-02 Tokyo Electron Ltd プラズマ処理装置
US5089083A (en) * 1989-04-25 1992-02-18 Tokyo Electron Limited Plasma etching method
US5180467A (en) * 1990-08-08 1993-01-19 Vlsi Technology, Inc. Etching system having simplified diffuser element removal
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
WO1992021136A1 (en) * 1991-05-21 1992-11-26 Materials Research Corporation Cluster tool soft etch module and ecr plasma generator therefor
RU2030849C1 (ru) * 1992-03-31 1995-03-10 Александр Савостьянович Тоболкин Высокочастотный генератор плазмы
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
JP2851229B2 (ja) * 1992-10-19 1999-01-27 株式会社日立製作所 プラズマエッチングシステム及びプラズマエッチング方法
KR100276093B1 (ko) * 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
JPH06302555A (ja) * 1993-04-16 1994-10-28 Sumitomo Metal Ind Ltd プラズマエッチング装置
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus

Also Published As

Publication number Publication date
KR100399566B1 (ko) 2003-12-31
AU5753296A (en) 1996-11-29
JP3930048B2 (ja) 2007-06-13
EP0826229B1 (de) 2003-02-19
RU2163044C2 (ru) 2001-02-10
CN1184555A (zh) 1998-06-10
CA2220678A1 (en) 1996-11-21
WO1996036984A1 (en) 1996-11-21
EP0826229A1 (de) 1998-03-04
US5569356A (en) 1996-10-29
JPH11505950A (ja) 1999-05-25
CN1103113C (zh) 2003-03-12
DE69626281T2 (de) 2003-12-11
DE69626281D1 (de) 2003-03-27
KR19990014794A (ko) 1999-02-25

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