ATE234370T1 - Tantal und niobreagenzien für cvd und beschichtungsverfahren - Google Patents

Tantal und niobreagenzien für cvd und beschichtungsverfahren

Info

Publication number
ATE234370T1
ATE234370T1 AT95932505T AT95932505T ATE234370T1 AT E234370 T1 ATE234370 T1 AT E234370T1 AT 95932505 T AT95932505 T AT 95932505T AT 95932505 T AT95932505 T AT 95932505T AT E234370 T1 ATE234370 T1 AT E234370T1
Authority
AT
Austria
Prior art keywords
tantalum
reagents
niobia
cvd
coating processes
Prior art date
Application number
AT95932505T
Other languages
English (en)
Inventor
Peter S Kirlin
Brian A Vaartstra
Douglas Gordon
Timothy E Glassman
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE234370T1 publication Critical patent/ATE234370T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT95932505T 1994-09-16 1995-09-14 Tantal und niobreagenzien für cvd und beschichtungsverfahren ATE234370T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/307,316 US5679815A (en) 1994-09-16 1994-09-16 Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
PCT/US1995/011633 WO1996008587A1 (en) 1994-09-16 1995-09-14 Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same

Publications (1)

Publication Number Publication Date
ATE234370T1 true ATE234370T1 (de) 2003-03-15

Family

ID=23189188

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95932505T ATE234370T1 (de) 1994-09-16 1995-09-14 Tantal und niobreagenzien für cvd und beschichtungsverfahren

Country Status (7)

Country Link
US (2) US5679815A (de)
EP (1) EP0792383B1 (de)
JP (1) JP3374858B2 (de)
KR (1) KR100343822B1 (de)
AT (1) ATE234370T1 (de)
DE (1) DE69529916T2 (de)
WO (1) WO1996008587A1 (de)

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US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US7323581B1 (en) 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US6111124A (en) 1997-10-30 2000-08-29 Advanced Technology Materials, Inc. Lewis base adducts of anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
KR100418164B1 (ko) * 1995-07-31 2004-03-19 미쓰비시 마테리알 가부시키가이샤 고순도 티탄착체 및 그의 제조방법과 티탄산 바륨 스트론튬막 형성용 액체조성물
US5695815A (en) * 1996-05-29 1997-12-09 Micron Technology, Inc. Metal carboxylate complexes for formation of metal-containing films on semiconductor devices
US6010969A (en) 1996-10-02 2000-01-04 Micron Technology, Inc. Method of depositing films on semiconductor devices by using carboxylate complexes
JP3082027B2 (ja) * 1996-11-08 2000-08-28 株式会社高純度化学研究所 ニオブアルコキシドおよびタンタルアルコキシドの 精製方法
GB9709639D0 (en) * 1997-05-14 1997-07-02 Inorgtech Ltd Chemical vapour deposition precursors
DE19730119A1 (de) * 1997-07-14 1999-01-21 Siemens Ag Verfahren zur Herstellung von Dünnfilmen aus oxidischer Keramik
JP2001511850A (ja) * 1997-12-10 2001-08-14 シーメンス アクチエンゲゼルシヤフト Ｂｉアミドを用いる強誘電体薄膜を製造するための低温ＣＶＤ処理法
US6180420B1 (en) * 1997-12-10 2001-01-30 Advanced Technology Materials, Inc. Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
US6133051A (en) * 1998-06-30 2000-10-17 Advanced Technology Materials, Inc. Amorphously deposited metal oxide ceramic films
US6015917A (en) 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6410173B1 (en) * 1998-11-30 2002-06-25 Denglas Technologies, Llc Antireflection coatings and other multilayer optical coatings for heat-treatable inorganic substrates and methods for making same
US6583057B1 (en) * 1998-12-14 2003-06-24 Motorola, Inc. Method of forming a semiconductor device having a layer deposited by varying flow of reactants
US7121997B2 (en) 1999-06-09 2006-10-17 Ethicon, Inc. Surgical instrument and method for treating female urinary incontinence
US6273951B1 (en) * 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US7094284B2 (en) * 1999-10-07 2006-08-22 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same
US6623656B2 (en) 1999-10-07 2003-09-23 Advanced Technology Materials, Inc. Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
KR100349001B1 (ko) * 1999-10-21 2002-08-17 학교법인 인하학원 니오븀 또는 탄탈륨 산화물 박막 제조용 전구체
ATE286602T1 (de) * 1999-11-10 2005-01-15 Denglas Technologies Llc Schichten auf basis von nioboxid für optische dünnfilmbeschichtungen und verfahren zu deren herstellung
EP1242646A1 (de) * 1999-11-15 2002-09-25 Advanced Technology Materials, Inc. Flüssigkeitsabgabe mocvd oder sbt
US6348705B1 (en) 1999-12-22 2002-02-19 Advanced Technology Materials, Inc. Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
WO2002018394A1 (en) * 2000-08-28 2002-03-07 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
AU2003248885A1 (en) * 2002-07-10 2004-01-23 Denglas Technologies, L.L.C. Method of making stress-resistant anti-reflection multilayer coatings containing cerium oxide
US8617312B2 (en) * 2002-08-28 2013-12-31 Micron Technology, Inc. Systems and methods for forming layers that contain niobium and/or tantalum
US6740586B1 (en) 2002-11-06 2004-05-25 Advanced Technology Materials, Inc. Vapor delivery system for solid precursors and method of using same
US7115528B2 (en) * 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
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US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
WO2007016698A2 (en) 2005-08-04 2007-02-08 C.R. Bard, Inc. Pelvic implant systems and methods
EP1948073B1 (de) 2005-11-14 2014-03-19 C.R.Bard, Inc. Bandankersystem
US8480559B2 (en) 2006-09-13 2013-07-09 C. R. Bard, Inc. Urethral support system
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US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US8071163B2 (en) * 2007-04-07 2011-12-06 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition of Ta- or Nb-doped high-k films
WO2008128141A2 (en) * 2007-04-12 2008-10-23 Advanced Technology Materials, Inc. Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
WO2009012341A2 (en) * 2007-07-16 2009-01-22 Advancaed Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
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US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
EP2573094A1 (de) * 2011-09-22 2013-03-27 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Neuartige organische Niobverbindungen und ihre Verwendung zur Dünnschichtauftragung
US10420860B2 (en) 2015-01-09 2019-09-24 Kondapavulur T. VENKATESWARA-RAO Coatings, materials, and devices with biohealing properties
KR102627457B1 (ko) 2019-08-06 2024-01-19 삼성전자주식회사 나이오븀 화합물과 이를 이용하는 박막 형성 방법

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Also Published As

Publication number Publication date
JPH11508534A (ja) 1999-07-27
DE69529916T2 (de) 2003-12-11
EP0792383B1 (de) 2003-03-12
JP3374858B2 (ja) 2003-02-10
US5679815A (en) 1997-10-21
EP0792383A1 (de) 1997-09-03
WO1996008587A1 (en) 1996-03-21
KR970706418A (ko) 1997-11-03
DE69529916D1 (de) 2003-04-17
US5677002A (en) 1997-10-14
EP0792383A4 (de) 1999-08-11
KR100343822B1 (ko) 2002-10-25

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