ATE242792T1 - Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementen - Google Patents

Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementen

Info

Publication number
ATE242792T1
ATE242792T1 AT98103574T AT98103574T ATE242792T1 AT E242792 T1 ATE242792 T1 AT E242792T1 AT 98103574 T AT98103574 T AT 98103574T AT 98103574 T AT98103574 T AT 98103574T AT E242792 T1 ATE242792 T1 AT E242792T1
Authority
AT
Austria
Prior art keywords
polishing agent
producing
silicon dioxide
fine particle
fine particles
Prior art date
Application number
AT98103574T
Other languages
English (en)
Inventor
Kenzo Hanawa
Naoyoshi Mochizuki
Naruo Ueda
Kazuhiko Kato
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Application granted granted Critical
Publication of ATE242792T1 publication Critical patent/ATE242792T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Silicon Compounds (AREA)
AT98103574T 1997-04-25 1998-03-02 Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementen ATE242792T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10875597A JP3359535B2 (ja) 1997-04-25 1997-04-25 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
ATE242792T1 true ATE242792T1 (de) 2003-06-15

Family

ID=14492692

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98103574T ATE242792T1 (de) 1997-04-25 1998-03-02 Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementen

Country Status (7)

Country Link
US (1) US5951724A (de)
EP (1) EP0874036B1 (de)
JP (1) JP3359535B2 (de)
KR (1) KR100372980B1 (de)
AT (1) ATE242792T1 (de)
DE (1) DE69815430D1 (de)
TW (1) TW494134B (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3604630B2 (ja) * 1997-07-25 2004-12-22 インフィネオン テクノロジース アクチエンゲゼルシャフト 半導体基板のための研磨剤
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
US6241586B1 (en) 1998-10-06 2001-06-05 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
US6572449B2 (en) 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
US6447693B1 (en) * 1998-10-21 2002-09-10 W. R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
WO2000023534A1 (en) * 1998-10-21 2000-04-27 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
JP3516157B2 (ja) * 1998-12-14 2004-04-05 松下電器産業株式会社 化学的機械研磨用研磨液および研磨方法
EP1148538A4 (de) * 1998-12-25 2009-10-21 Hitachi Chemical Co Ltd Cmp-schleifmittel, flüssigzusatz für dasselbe und substratpoliermethode
KR100574259B1 (ko) 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
JP2000301441A (ja) * 1999-04-19 2000-10-31 Nippon Micro Coating Kk 化学的機械的テクスチャ加工方法
US6238450B1 (en) * 1999-06-16 2001-05-29 Saint-Gobain Industrial Ceramics, Inc. Ceria powder
US6159077A (en) * 1999-07-30 2000-12-12 Corning Incorporated Colloidal silica polishing abrasive
US6322425B1 (en) 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
US6447375B2 (en) 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition
CN1175401C (zh) * 2000-04-28 2004-11-10 三井金属矿业株式会社 磁记录介质用玻璃基板的制造方法
DE10054345A1 (de) 2000-11-02 2002-05-08 Degussa Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung
JP3945745B2 (ja) 2001-03-09 2007-07-18 三井金属鉱業株式会社 セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
KR100507833B1 (ko) * 2001-08-20 2005-08-17 삼성코닝 주식회사 실리카 코팅된 세리아를 포함하는 연마용 조성물
US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
JP4574140B2 (ja) * 2003-08-27 2010-11-04 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いる研磨方法
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
JP5012026B2 (ja) * 2004-11-08 2012-08-29 旭硝子株式会社 ＣｅＯ２微粒子の製造方法
JP2007103514A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨用組成物及び研磨方法
KR100819769B1 (ko) * 2006-12-29 2008-04-08 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법
WO2009031447A1 (ja) * 2007-09-07 2009-03-12 Asahi Glass Company, Limited 酸化物結晶微粒子の製造方法
US7993420B2 (en) * 2008-02-12 2011-08-09 Saint-Gobain Ceramics & Plastics, Inc. Ceria material and method of forming same
KR101057106B1 (ko) * 2008-10-21 2011-08-16 대구텍 유한회사 절삭 공구 및 이의 표면 처리방법
EP2743335A1 (de) * 2008-12-31 2014-06-18 MEMC Singapore Pte. Ltd. Verfahren zur Rückgewinnung und Reinigung von Siliciumteilchen aus Sägeabfällen
JP5689324B2 (ja) * 2011-01-13 2015-03-25 花王株式会社 非晶質ガラス基板用研磨液組成物
JP2015143332A (ja) * 2013-12-24 2015-08-06 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
JP6371193B2 (ja) * 2014-10-22 2018-08-08 日揮触媒化成株式会社 シリカ系複合粒子分散液の製造方法
JP6179839B1 (ja) * 2017-02-14 2017-08-23 エム・テクニック株式会社 ケイ素ドープ金属酸化物粒子、及びケイ素ドープ金属酸化物粒子を含む紫外線吸収用組成物
JP7044510B2 (ja) * 2017-10-10 2022-03-30 花王株式会社 酸化セリウム含有複合研磨材
CN115386301B (zh) * 2022-09-17 2023-10-13 长治市龙晨科技有限公司 一种氧化镓单晶片加工用cmp抛光液及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
TW311905B (de) * 1994-07-11 1997-08-01 Nissan Chemical Ind Ltd
JPH08148455A (ja) * 1994-08-18 1996-06-07 Sumitomo Metal Ind Ltd 薄膜の表面平坦化方法
JP2864451B2 (ja) * 1994-11-07 1999-03-03 三井金属鉱業株式会社 研磨材及び研磨方法
JPH0982667A (ja) * 1995-09-20 1997-03-28 Hitachi Ltd 研磨剤および研磨平坦化方法
JP3359479B2 (ja) * 1995-11-07 2002-12-24 三井金属鉱業株式会社 研磨材、その製造方法及び研磨方法
JP2746861B2 (ja) * 1995-11-20 1998-05-06 三井金属鉱業株式会社 酸化セリウム超微粒子の製造方法

Also Published As

Publication number Publication date
TW494134B (en) 2002-07-11
JPH10298537A (ja) 1998-11-10
KR100372980B1 (ko) 2003-05-09
EP0874036A1 (de) 1998-10-28
US5951724A (en) 1999-09-14
EP0874036B1 (de) 2003-06-11
JP3359535B2 (ja) 2002-12-24
DE69815430D1 (de) 2003-07-17
KR19980080634A (ko) 1998-11-25

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