ATE244777T1 - Rechteckige vakuumlichtbogenplasmaquelle - Google Patents

Rechteckige vakuumlichtbogenplasmaquelle

Info

Publication number
ATE244777T1
ATE244777T1 AT95917050T AT95917050T ATE244777T1 AT E244777 T1 ATE244777 T1 AT E244777T1 AT 95917050 T AT95917050 T AT 95917050T AT 95917050 T AT95917050 T AT 95917050T AT E244777 T1 ATE244777 T1 AT E244777T1
Authority
AT
Austria
Prior art keywords
rectangular
plasma
arc
source
cathode
Prior art date
Application number
AT95917050T
Other languages
English (en)
Inventor
Richard P Welty
Original Assignee
Vapor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc
Application granted granted Critical
Publication of ATE244777T1 publication Critical patent/ATE244777T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Arc Welding In General (AREA)
  • Discharge Heating (AREA)
AT95917050T 1994-04-25 1995-04-25 Rechteckige vakuumlichtbogenplasmaquelle ATE244777T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/233,006 US5480527A (en) 1994-04-25 1994-04-25 Rectangular vacuum-arc plasma source
PCT/US1995/004786 WO1995029272A1 (en) 1994-04-25 1995-04-25 Rectangular vacuum-arc plasma source

Publications (1)

Publication Number Publication Date
ATE244777T1 true ATE244777T1 (de) 2003-07-15

Family

ID=22875490

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95917050T ATE244777T1 (de) 1994-04-25 1995-04-25 Rechteckige vakuumlichtbogenplasmaquelle

Country Status (9)

Country Link
US (2) US5480527A (de)
EP (1) EP0758408B1 (de)
JP (1) JP3868483B2 (de)
KR (1) KR100361620B1 (de)
AT (1) ATE244777T1 (de)
AU (1) AU695441B2 (de)
CA (1) CA2188799A1 (de)
DE (1) DE69531240D1 (de)
WO (1) WO1995029272A1 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
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US6083567A (en) * 1996-08-30 2000-07-04 University Of Maryland, Baltimore County Sequential ion implantation and deposition (SIID) technique
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US5972185A (en) * 1997-08-30 1999-10-26 United Technologies Corporation Cathodic arc vapor deposition apparatus (annular cathode)
US6036828A (en) * 1997-08-30 2000-03-14 United Technologies Corporation Apparatus for steering the arc in a cathodic arc coater
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DE19739527C2 (de) * 1997-09-09 2003-10-16 Rossendorf Forschzent Vakuumbogen-Plasmaquelle mit Magnet-Partikelfilter
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US6465780B1 (en) * 1999-03-31 2002-10-15 The Regents Of The University Of California Filters for cathodic arc plasmas
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US6645354B1 (en) 2000-04-07 2003-11-11 Vladimir I. Gorokhovsky Rectangular cathodic arc source and method of steering an arc spot
CA2268659C (en) * 1999-04-12 2008-12-30 Vladimir I. Gorokhovsky Rectangular cathodic arc source and method of steering an arc spot
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JP4000764B2 (ja) * 2000-09-18 2007-10-31 日新電機株式会社 真空アーク蒸発装置
JP2002105628A (ja) 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP4085593B2 (ja) * 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
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US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
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US20040172832A1 (en) * 2003-03-04 2004-09-09 Colin Clipstone Razor blade
JP4438326B2 (ja) * 2003-06-13 2010-03-24 日新電機株式会社 偏向磁場型真空アーク蒸着装置
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US7381311B2 (en) * 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
JP4319556B2 (ja) * 2004-01-28 2009-08-26 浩史 滝川 プラズマ生成装置
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JP5424744B2 (ja) * 2009-07-01 2014-02-26 株式会社フェローテック 分割環状リブ型プラズマ処理装置
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JP5606777B2 (ja) * 2010-04-22 2014-10-15 株式会社フェローテック プラズマ流生成方法、プラズマ処理方法、プラズマ発生装置及びプラズマ処理装置
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UA97584C2 (ru) * 2010-11-08 2012-02-27 Национальный Научный Центр "Харьковский Физико-Технический Институт" СПОСОБ ТРАНСПОРТИРОВКИ Вакуумно-дуговой Катодной ПЛАЗМЫ С фильтрованием От макрочастиц И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ
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JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
JP6347414B2 (ja) * 2014-11-04 2018-06-27 日新イオン機器株式会社 質量分析電磁石
JP7082789B2 (ja) * 2017-12-26 2022-06-09 株式会社オンワード技研 真空アークプラズマ蒸着装置の先端防汚型着火装置
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DE102020215892A1 (de) 2020-12-15 2022-06-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung zur Ausbildung von amorphen Kohlenstoffschichten auf Bauteiloberflächen mit reduzierter Oberflächenrauheit
KR102406350B1 (ko) 2022-03-31 2022-06-08 주식회사 조양 플라즈마 생성용 가스 도관 제조방법 및 이에 따라 제조된 가스 도관
KR102791667B1 (ko) 2022-04-19 2025-04-08 주식회사 코리아모빌리티 전압 및 주파수 가변 플라즈마 고전압 발생기가 구비된 공기청정기
CN117512528B (zh) * 2022-07-27 2026-02-24 安徽纯源镀膜科技有限公司 一种提高磁过滤电弧离子镀沉积速率的装置
CN117144303B (zh) * 2023-09-14 2026-03-10 北京北方华创真空技术有限公司 一种蒸镀用电子束偏置设计方法及蒸镀设备

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Also Published As

Publication number Publication date
KR100361620B1 (ko) 2003-02-17
WO1995029272A1 (en) 1995-11-02
US5840163A (en) 1998-11-24
EP0758408B1 (de) 2003-07-09
EP0758408A1 (de) 1997-02-19
AU695441B2 (en) 1998-08-13
US5480527A (en) 1996-01-02
AU2388795A (en) 1995-11-16
EP0758408A4 (de) 2000-01-26
CA2188799A1 (en) 1995-11-02
JPH10505633A (ja) 1998-06-02
JP3868483B2 (ja) 2007-01-17
DE69531240D1 (de) 2003-08-14

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