ATE253537T1 - Siliziumkarbid-verbundwerkstoff, verfahren zu seiner herstellung und wärmeableitungsanordnung, die diesen verwendet - Google Patents

Siliziumkarbid-verbundwerkstoff, verfahren zu seiner herstellung und wärmeableitungsanordnung, die diesen verwendet

Info

Publication number
ATE253537T1
ATE253537T1 AT99122404T AT99122404T ATE253537T1 AT E253537 T1 ATE253537 T1 AT E253537T1 AT 99122404 T AT99122404 T AT 99122404T AT 99122404 T AT99122404 T AT 99122404T AT E253537 T1 ATE253537 T1 AT E253537T1
Authority
AT
Austria
Prior art keywords
silicon carbide
production
heat dissipation
composite material
same
Prior art date
Application number
AT99122404T
Other languages
English (en)
Inventor
Hideki Hirotsuru
-Chome Asahimachi
Kenji Nomura
Ryuichi Terasaki
Mitsuaki Saito
Kazuyuki Hiruta
Akira Miyai
Original Assignee
Denki Kagaku Kogyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27337174&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE253537(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Denki Kagaku Kogyo Kk filed Critical Denki Kagaku Kogyo Kk
Application granted granted Critical
Publication of ATE253537T1 publication Critical patent/ATE253537T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/515—Other specific metals
    • C04B41/5155—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/257—Arrangements for cooling characterised by their materials having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249955—Void-containing component partially impregnated with adjacent component
    • Y10T428/249956—Void-containing component is inorganic
    • Y10T428/249957—Inorganic impregnant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971—Preformed hollow element-containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249971—Preformed hollow element-containing
    • Y10T428/249974—Metal- or silicon-containing element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y10T428/24998—Composite has more than two layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249986—Void-containing component contains also a solid fiber or solid particle
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y10T428/24999—Inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
AT99122404T 1998-11-12 1999-11-10 Siliziumkarbid-verbundwerkstoff, verfahren zu seiner herstellung und wärmeableitungsanordnung, die diesen verwendet ATE253537T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32205498 1998-11-12
JP36048298 1998-12-18
JP28542999A JP3468358B2 (ja) 1998-11-12 1999-10-06 炭化珪素質複合体及びその製造方法とそれを用いた放熱部品

Publications (1)

Publication Number Publication Date
ATE253537T1 true ATE253537T1 (de) 2003-11-15

Family

ID=27337174

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99122404T ATE253537T1 (de) 1998-11-12 1999-11-10 Siliziumkarbid-verbundwerkstoff, verfahren zu seiner herstellung und wärmeableitungsanordnung, die diesen verwendet

Country Status (6)

Country Link
US (1) US6447894B1 (de)
EP (1) EP1000915B1 (de)
JP (1) JP3468358B2 (de)
KR (1) KR100637635B1 (de)
AT (1) ATE253537T1 (de)
DE (1) DE69912564T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3980262B2 (ja) * 2000-10-31 2007-09-26 日本碍子株式会社 SiC質熱処理用治具
JP4015023B2 (ja) 2001-02-22 2007-11-28 日本碍子株式会社 電子回路用部材及びその製造方法並びに電子部品
JP2003034587A (ja) * 2001-07-25 2003-02-07 Ryoka Macs Corp 炭素基複合材料及び塑性加工性改良方法
JP2003201528A (ja) 2001-10-26 2003-07-18 Ngk Insulators Ltd ヒートシンク材
GB2395360B (en) * 2001-10-26 2005-03-16 Ngk Insulators Ltd Heat sink material
KR100541729B1 (ko) * 2003-06-23 2006-01-10 삼성전자주식회사 반도체소자 검사장치
US20050049350A1 (en) * 2003-08-25 2005-03-03 Sandeep Tonapi Thin bond-line silicone adhesive composition and method for preparing the same
JP4543279B2 (ja) * 2004-03-31 2010-09-15 Dowaメタルテック株式会社 アルミニウム接合部材の製造方法
KR100562280B1 (ko) * 2004-06-15 2006-03-23 주식회사모나미 필기구
WO2006030676A1 (ja) * 2004-09-14 2006-03-23 Denki Kagaku Kogyo Kabushiki Kaisha アルミニウム-炭化珪素質複合体
US7622803B2 (en) * 2005-08-30 2009-11-24 Cree, Inc. Heat sink assembly and related methods for semiconductor vacuum processing systems
EP1973157B1 (de) * 2006-01-13 2017-06-21 Denka Company Limited Aluminium-/siliziumcarbid-zusammensetzung und diese nutzendes wärmestrahlungsteil
WO2007125878A1 (ja) * 2006-04-26 2007-11-08 Denki Kagaku Kogyo Kabushiki Kaisha アルミニウム-炭化珪素質複合体及びそれを用いた放熱部品
EP2017886A4 (de) * 2006-05-09 2012-10-17 Denki Kagaku Kogyo Kk Aluminium-siliciumcarbit-verbundkörper und verfahren zu seiner verarbeitung
JP4732430B2 (ja) * 2007-12-19 2011-07-27 電気化学工業株式会社 アルミニウム−セラミックス複合体及びその製造方法
JP5496888B2 (ja) * 2008-07-17 2014-05-21 電気化学工業株式会社 アルミニウム−ダイヤモンド系複合体の製造方法
US9028959B2 (en) * 2008-10-03 2015-05-12 Sumitomo Electric Industries, Ltd. Composite member
US8883564B2 (en) 2009-02-12 2014-11-11 Denki Kagaku Kogyo Kabushiki Kaisha Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and LED luminescent member
CN102318093B (zh) * 2009-02-13 2016-05-25 电化株式会社 用于led发光元件的复合材料基板、其制造方法及led发光元件
CN102473829B (zh) 2009-07-17 2014-12-10 电气化学工业株式会社 Led芯片接合体、led封装体、及led封装体的制造方法
US8890189B2 (en) * 2009-07-31 2014-11-18 Denki Kagaku Kogyo Kabushiki Kaisha Wafer for LED mounting, method for manufacturing same, and LED-mounted structure using the wafer
CN102834534B (zh) * 2010-04-02 2014-07-30 住友电气工业株式会社 镁基复合构件、散热构件和半导体装置
JP2012119671A (ja) * 2010-11-11 2012-06-21 Kitagawa Ind Co Ltd 電子回路及びヒートシンク
JP5662834B2 (ja) * 2011-02-22 2015-02-04 電気化学工業株式会社 アルミニウム−炭化珪素質複合体の製造方法
CN102306694A (zh) * 2011-05-24 2012-01-04 常州碳元科技发展有限公司 用于led封装的嵌套散热支架、led灯及制造方法
JP2013237597A (ja) * 2012-05-17 2013-11-28 Hitachi Metals Ltd プリフォーム、それを用いた金属−セラミックス複合材及びその製造方法
CN103433491B (zh) * 2013-09-18 2015-05-13 湖南航天工业总公司 一种碳化硅igbt基板骨架真空压力渗铝装置及双面覆铝方法
JPWO2015115649A1 (ja) * 2014-02-03 2017-03-23 デンカ株式会社 炭化珪素質複合体及びその製造方法並びにそれを用いた放熱部品
CN106463484B (zh) 2014-03-18 2020-06-19 电化株式会社 铝-碳化硅质复合体及功率模块用基底板
KR101512765B1 (ko) * 2014-04-07 2015-04-16 주식회사 티앤머티리얼스 알루미늄 탄화규소질 복합체 성형장치 및 이를 이용한 제조방법
JPWO2016002943A1 (ja) 2014-07-04 2017-06-08 デンカ株式会社 放熱部品及びその製造方法
WO2016013648A1 (ja) 2014-07-24 2016-01-28 電気化学工業株式会社 複合体及びその製造方法
KR101579912B1 (ko) * 2015-05-28 2015-12-28 주식회사 가남 그라파이트-알루미늄 복합체의 제조방법 및 이의 용도
KR101688880B1 (ko) 2016-03-08 2016-12-23 주식회사 가남 태양광 인버터용 고효율 방열소재 및 이의 제조방법
WO2018180159A1 (ja) 2017-03-29 2018-10-04 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
JP6911805B2 (ja) 2018-03-27 2021-07-28 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
EP3823017B1 (de) * 2018-07-13 2022-12-07 Denka Company Limited Verbundwerkstoff auf der basis von metall-siliciumcarbid und verfahren zur herstellung eines verbundwerkstoffes auf der basis von metall-siliciumcarbid
EP3890007B1 (de) 2018-11-29 2022-12-28 Denka Company Limited Wärmeableitungsteil
JP7116690B2 (ja) 2019-01-30 2022-08-10 デンカ株式会社 放熱部材およびその製造方法
JP7116689B2 (ja) 2019-01-30 2022-08-10 デンカ株式会社 放熱部材およびその製造方法
KR102124766B1 (ko) 2019-12-31 2020-06-19 (주)삼양컴텍 플라즈마 처리 장치 및 그 제조방법
KR102234171B1 (ko) 2019-12-31 2021-03-31 (주)삼양컴텍 저저항 실리콘카바이드계 복합체의 제조방법
JP7596363B2 (ja) 2020-03-31 2024-12-09 デンカ株式会社 素子搭載基板、および素子搭載基板の製造方法
WO2022153891A1 (ja) * 2021-01-12 2022-07-21 デンカ株式会社 積層体、及びその製造方法、並びに、パワーモジュール
CN112919923B (zh) * 2021-01-21 2022-07-12 周煜 金属基复合材料及其制备方法和应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390220A (en) * 1981-04-02 1983-06-28 Burroughs Corporation Electrical connector assembly for an integrated circuit package
JPS59199587A (ja) * 1983-04-26 1984-11-12 住友電気工業株式会社 高熱伝導性基板およびその製造方法
US5004035A (en) * 1988-11-10 1991-04-02 Lanxide Technology Company, Lp Method of thermo-forming a novel metal matrix composite body and products produced therefrom
DE3940933C2 (de) 1989-12-12 1996-08-01 Eupec Gmbh & Co Kg Verfahren zum Verformen einer Basisplatte für Halbleitermodule und Vorrichtung zum Durchführen des Verfahrens
JPH0497976A (ja) * 1990-08-13 1992-03-30 Eagle Ind Co Ltd 炭化珪素系複合体およびその製造方法
JPH06145840A (ja) * 1991-03-29 1994-05-27 Osaka Cement Co Ltd 三次元の炭化ケイ素骨格をもつアルミニウム系複合材料
US5775403A (en) * 1991-04-08 1998-07-07 Aluminum Company Of America Incorporating partially sintered preforms in metal matrix composites
US5259436A (en) * 1991-04-08 1993-11-09 Aluminum Company Of America Fabrication of metal matrix composites by vacuum die casting
JP3154846B2 (ja) * 1992-12-11 2001-04-09 電気化学工業株式会社 金属ベース回路基板及びその製造方法
US5465481A (en) * 1993-10-04 1995-11-14 Motorola, Inc. Method for fabricating a semiconductor package
DE4338107C1 (de) 1993-11-08 1995-03-09 Eupec Gmbh & Co Kg Halbleiter-Modul
JPH08204071A (ja) 1995-01-27 1996-08-09 Toshiba Corp 半導体装置
JP3180677B2 (ja) 1996-08-22 2001-06-25 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JPH11130568A (ja) 1997-10-24 1999-05-18 Denki Kagaku Kogyo Kk 複合体とそれを用いたヒートシンク
JPH11157964A (ja) * 1997-11-26 1999-06-15 Denki Kagaku Kogyo Kk 板状複合体とそれを用いた放熱部品
DE19840583A1 (de) * 1998-09-05 2000-03-09 Bayer Ag Mikrokapsel-Formulierungen
KR100368789B1 (ko) * 2000-02-07 2003-01-24 한국과학기술연구원 전계흡수형 소자의 단면 반사율 측정 방법

Also Published As

Publication number Publication date
DE69912564T2 (de) 2004-05-13
EP1000915B1 (de) 2003-11-05
DE69912564D1 (de) 2003-12-11
JP2000281468A (ja) 2000-10-10
KR20000035298A (ko) 2000-06-26
US6447894B1 (en) 2002-09-10
EP1000915A2 (de) 2000-05-17
EP1000915A3 (de) 2000-09-06
KR100637635B1 (ko) 2006-10-23
JP3468358B2 (ja) 2003-11-17

Similar Documents

Publication Publication Date Title
DE69912564D1 (de) Siliziumkarbid-Verbundwerkstoff, Verfahren zu seiner Herstellung und Wärmeableitungsanordnung, die diesen verwendet
DE69921099D1 (de) Wärmeausdehnbare mikrokapseln, verfahren zur herstellung und verwendung derselben
DE69002432D1 (de) Diamant-halbleiter-bauteil und methode zu seiner herstellung.
DE69309375D1 (de) Hochglanzpolierbares Siliziumkarbid mit hoher thermischer leitfähigkeit, Verfahren zur Herstellung und Anwendung
DE69426742D1 (de) Aluminiumoxidzusammensetzung, Formkörper und Keramiken und Verfahren zur Herstellung der Keramiken
DE69412882D1 (de) Kohlenstoffmaterial, hergestellt aus Graphit, und Verfahren zur Herstellung desselben
CA2301775A1 (en) Method of manufacturing a diamond-silicon carbide-silicon composite and a composite produced by this method
EP0587119A3 (de) Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung.
EP0916635A3 (de) Keramische Ueberzuege mit mehrschichtiger Porositaet
DE3768338D1 (de) Zusammensetzung, verfahren zur deren herstellung und schichtstoff.
DE60135872D1 (de) Absackbekämpfung bei isorohren, die bei der herstellung von flachglas nach dem schmelzverfahren verwendet werden
EP0681516A4 (de) Bandsägeblatt und verfahren zu seiner herstellung.
DE3583998D1 (de) Polyimidvorlaeufer-harzzusammensetzung und halbleiterkomponente, die dieselbe verwendet.
CY2009017I1 (el) Μεθοδος για την παρασκευη 10, 11-διυδρο-10-υδροξυ-5η-διβενζο/β,f/αζεπινο-5-καρβοξαμιδιου και 10,11-διυδρο-10-οξο-5η-διβενζο/β,f/αζεπινο-5-καρβοξαμιδιου
DE69525248D1 (de) Flächen-kristallines Wolframkarbid enthaltendes Hartmetall, Zusammensetzung zur Herstellung von flächen-kristallines Wolframkarbid und Verfahren zur Herstellung des Hartmetalls
DE60225433D1 (de) Verfahren zur herstellung von 1,3-substituierte indene und aryl-annellierte azapolycyclische verbindungen
DE69015882D1 (de) Siliciumnitrid-Siliciumkarbidverbundmaterial und Verfahren zu seiner Herstellung.
DE3780046D1 (de) Keramikkoerper aus cordierit mit kleinem thermischen ausdehnungskoeffizienten, verfahren zu seiner herstellung und methode zur ermittlung der cordierit-zusammensetzung.
PL343176A1 (en) Fungicidal 6-(2-halo-4-alkoxyphenyl)-triazolopyrimidines
DE3767892D1 (de) Thermoelektrischer werkstoff, anwendbar bei niedrigen temperaturen und verfahren zu seiner herstellung.
FR2820737B1 (fr) Procede de fabrication d'un composite carbone/carbure de silicium
DE68923171D1 (de) Aluminiumhydroxyd, verfahren zur herstellung und zusammensetzung.
JPH10114827A5 (ja) シラザンポリマーの架橋方法、プレプレグの製造方法、セラミックマトリックス複合体の形成方法および多孔質セラミックの緻密化方法
DE69906804D1 (de) Keramischer zünder mit hoher oxidationsbeständigheit und verfahren zur herstellung desselben
DE60102485D1 (de) Herstellung von aluminium-silizium-legierungen

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1000915

Country of ref document: EP