ATE258576T1 - Zusammensetzung und verfahren zum egalisieren von oberflächen - Google Patents

Zusammensetzung und verfahren zum egalisieren von oberflächen

Info

Publication number
ATE258576T1
ATE258576T1 AT00979196T AT00979196T ATE258576T1 AT E258576 T1 ATE258576 T1 AT E258576T1 AT 00979196 T AT00979196 T AT 00979196T AT 00979196 T AT00979196 T AT 00979196T AT E258576 T1 ATE258576 T1 AT E258576T1
Authority
AT
Austria
Prior art keywords
composition
polishing
planarizing
abrasive particles
evaluating
Prior art date
Application number
AT00979196T
Other languages
English (en)
Inventor
Brian L Mueller
James A Dirksen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE258576T1 publication Critical patent/ATE258576T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemically Coating (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Polymerisation Methods In General (AREA)
AT00979196T 1999-11-15 2000-11-15 Zusammensetzung und verfahren zum egalisieren von oberflächen ATE258576T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/440,525 US6319096B1 (en) 1999-11-15 1999-11-15 Composition and method for planarizing surfaces
PCT/US2000/031654 WO2001036555A1 (en) 1999-11-15 2000-11-15 Composition and method for planarizing surfaces

Publications (1)

Publication Number Publication Date
ATE258576T1 true ATE258576T1 (de) 2004-02-15

Family

ID=23749103

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00979196T ATE258576T1 (de) 1999-11-15 2000-11-15 Zusammensetzung und verfahren zum egalisieren von oberflächen

Country Status (12)

Country Link
US (1) US6319096B1 (de)
EP (1) EP1234009B1 (de)
JP (1) JP4943614B2 (de)
KR (1) KR100732079B1 (de)
CN (1) CN1162490C (de)
AT (1) ATE258576T1 (de)
AU (1) AU1660101A (de)
DE (1) DE60008019T2 (de)
HK (1) HK1049182A1 (de)
MY (1) MY120865A (de)
TW (1) TW500786B (de)
WO (1) WO2001036555A1 (de)

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US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
KR20030050026A (ko) * 2001-12-18 2003-06-25 백운규 화학기계적 연마용 슬러리, 이들 슬러리의 제조방법 및이들 슬러리를 이용한 화학기계적 연마방법
KR100479416B1 (ko) * 2002-05-29 2005-03-30 테크노세미켐 주식회사 화학기계적 연마용 슬러리의 제조방법
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
TWI254741B (en) * 2003-02-05 2006-05-11 Kao Corp Polishing composition
US7214623B2 (en) * 2003-10-13 2007-05-08 International Business Machines Corporation Planarization system and method using a carbonate containing fluid
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
KR100588404B1 (ko) * 2004-03-16 2006-06-12 삼성코닝 주식회사 반도체 박막 연마용 산화세륨 슬러리
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4267546B2 (ja) * 2004-04-06 2009-05-27 花王株式会社 基板の製造方法
JP5107700B2 (ja) * 2004-05-04 2012-12-26 キャボット コーポレイション 所望の凝集体粒子直径を有する凝集体金属酸化物粒子分散体の調製方法
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US6979252B1 (en) 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
DE102006008689B4 (de) * 2006-02-24 2012-01-26 Lanxess Deutschland Gmbh Poliermittel und dessen Verwendung
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP2013074036A (ja) * 2011-09-27 2013-04-22 Toshiba Corp Cmp用スラリーおよび半導体装置の製造方法
SG11201606157VA (en) * 2014-01-31 2016-08-30 Basf Se A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
MY186419A (en) 2014-03-28 2021-07-22 Yamaguchi Seiken Kogyo Co Ltd Polishing composition and method for polishing magnetic disk substrate
WO2015146941A1 (ja) 2014-03-28 2015-10-01 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
WO2017051770A1 (ja) 2015-09-25 2017-03-30 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法

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Also Published As

Publication number Publication date
KR100732079B1 (ko) 2007-06-27
JP2003514950A (ja) 2003-04-22
TW500786B (en) 2002-09-01
DE60008019D1 (de) 2004-03-04
EP1234009A1 (de) 2002-08-28
CN1390248A (zh) 2003-01-08
AU1660101A (en) 2001-05-30
MY120865A (en) 2005-11-30
DE60008019T2 (de) 2004-07-08
US6319096B1 (en) 2001-11-20
JP4943614B2 (ja) 2012-05-30
CN1162490C (zh) 2004-08-18
EP1234009B1 (de) 2004-01-28
HK1049182A1 (zh) 2003-05-02
WO2001036555A1 (en) 2001-05-25
KR20020056914A (ko) 2002-07-10

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