ATE263224T1 - Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung - Google Patents

Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung

Info

Publication number
ATE263224T1
ATE263224T1 AT00991904T AT00991904T ATE263224T1 AT E263224 T1 ATE263224 T1 AT E263224T1 AT 00991904 T AT00991904 T AT 00991904T AT 00991904 T AT00991904 T AT 00991904T AT E263224 T1 ATE263224 T1 AT E263224T1
Authority
AT
Austria
Prior art keywords
cesium
hydroxyde
dielectric slurry
cesium hydroxide
polishing compositions
Prior art date
Application number
AT00991904T
Other languages
English (en)
Inventor
Alicia F Walters
Brian L Mueller
James A Dirksen
Paul M Feeney
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE263224T1 publication Critical patent/ATE263224T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
AT00991904T 1999-11-04 2000-10-31 Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung ATE263224T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/428,965 US6350393B2 (en) 1999-11-04 1999-11-04 Use of CsOH in a dielectric CMP slurry
PCT/US2000/041707 WO2001032793A2 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Publications (1)

Publication Number Publication Date
ATE263224T1 true ATE263224T1 (de) 2004-04-15

Family

ID=23701170

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00991904T ATE263224T1 (de) 1999-11-04 2000-10-31 Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung

Country Status (11)

Country Link
US (1) US6350393B2 (de)
EP (1) EP1234010B1 (de)
JP (3) JP2003514061A (de)
KR (1) KR20020077343A (de)
CN (1) CN1220742C (de)
AT (1) ATE263224T1 (de)
AU (1) AU3639001A (de)
DE (1) DE60009546T2 (de)
HK (1) HK1048826A1 (de)
TW (1) TW554022B (de)
WO (1) WO2001032793A2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100526092B1 (ko) * 2002-10-15 2005-11-08 주식회사 네패스 실리콘 웨이퍼용 에지연마 조성물
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
TWI403574B (zh) * 2005-01-05 2013-08-01 霓塔哈斯股份有限公司 Grinding slurry
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
JP2009517329A (ja) 2005-11-28 2009-04-30 クリスタル・イズ，インコーポレイテッド 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法
CN101331249B (zh) * 2005-12-02 2012-12-19 晶体公司 掺杂的氮化铝晶体及其制造方法
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
SG175636A1 (en) * 2006-10-16 2011-11-28 Cabot Microelectronics Corp Glass polishing compositions and methods
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US9437430B2 (en) 2007-01-26 2016-09-06 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
EP2768920A4 (de) * 2011-10-21 2015-06-03 Advanced Tech Materials Aminfreie post-kmp-zusammensetzung und anwendungsverfahren dafür
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
US20150280057A1 (en) 2013-03-15 2015-10-01 James R. Grandusky Methods of forming planar contacts to pseudomorphic electronic and optoelectronic devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150171A (en) 1976-03-30 1979-04-17 Surface Technology, Inc. Electroless plating
US4440670A (en) 1982-09-30 1984-04-03 Exxon Research And Engineering Co. Method of synthesizing high surface area unagglomerated noble metal pyrochlore compounds
DE3884778T2 (de) * 1987-12-29 1994-05-11 Du Pont Feine Polierzusammensetzung für Plaketten.
JP2625002B2 (ja) * 1988-06-27 1997-06-25 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研磨用組成物
US5352277A (en) 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
US5129982A (en) 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
US5525191A (en) * 1994-07-25 1996-06-11 Motorola, Inc. Process for polishing a semiconductor substrate
US5714418A (en) * 1995-11-08 1998-02-03 Intel Corporation Diffusion barrier for electrical interconnects in an integrated circuit
EP0779655A3 (de) * 1995-12-14 1997-07-16 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
EP0786504A3 (de) * 1996-01-29 1998-05-20 Fujimi Incorporated Politurzusammensetzung
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH09316431A (ja) * 1996-05-27 1997-12-09 Showa Kiyabotsuto Super Metal Kk 研磨用スラリー

Also Published As

Publication number Publication date
WO2001032793A3 (en) 2001-08-02
EP1234010A2 (de) 2002-08-28
JP2015147938A (ja) 2015-08-20
DE60009546T2 (de) 2005-02-03
JP2003514061A (ja) 2003-04-15
DE60009546D1 (de) 2004-05-06
US6350393B2 (en) 2002-02-26
HK1048826A1 (zh) 2003-04-17
KR20020077343A (ko) 2002-10-11
JP2012156550A (ja) 2012-08-16
US20010051433A1 (en) 2001-12-13
TW554022B (en) 2003-09-21
WO2001032793A2 (en) 2001-05-10
AU3639001A (en) 2001-05-14
EP1234010B1 (de) 2004-03-31
WO2001032793A8 (en) 2001-10-04
JP6030703B2 (ja) 2016-11-24
CN1387556A (zh) 2002-12-25
CN1220742C (zh) 2005-09-28

Similar Documents

Publication Publication Date Title
ATE263224T1 (de) Verwendung von cäsiumhydroxyd für dielektrische aufschlämmung
MY116265A (en) A polishing composition including an inhibitor of tungsten etching
ATE405618T1 (de) Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
ES2159495T1 (es) Suspension acuosa espesa para la pulimentacion quimica-mecanica de capas metalicas.
TW375660B (en) Fluoride additive containing chemical mechanical polishing slurry composition and method for use of same
ATE266399T1 (de) Neue substituierte triazolverbindungen
ATE359338T1 (de) Gesintertes, polykristallines zirkonia enthaltende schleifteilchen
MY126717A (en) Cmp composition containing silane modified abrasive particles.
MY126250A (en) Rare earth salt/oxidizer-based cmp method
ATE366165T1 (de) Transparente mikroporöse materialien für cmp
TW349244B (en) Method of fabricating a semiconductor device using a CMP process and a polishing apparatus for such a CMP process
MY123257A (en) Optical polishing formulation
DE68921570D1 (de) Feine Polierzusammensetzung für Plaketten.
ATE234625T1 (de) Glp-1 zusammensetzungen mit verlängerter wirkdauer
GB0305142D0 (en) Synthesis
ES2160319T3 (es) Contaminante sintetico de prueba.
MY121115A (en) Abrasive composition for the electronics industry
GB0011358D0 (en) Novel use
MY118116A (en) Method of polishing a memory or rigid disk with an ammonia and/or halide-containing composition
PT1420769E (pt) Modulação de perfil lipídico com esteróides e agonistas de ppar alfa
SG168405A1 (en) Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit
DE69913317D1 (de) Reinigungs-/schwabbeleinheit für halbleiterbearbeitungsvorrichtung
DE69721094D1 (de) Beschichtete Schleifmittel für abrasive Werkzeuge
DE59901651D1 (de) Schleifvorrichtung für gebogene flächen
DE60139939D1 (de) Aluminiumoxid-yttriumoxid-zirkonoxid eutektium enthaltende, geschmolzene schleifpartikel, schleifgegenstände und verfahren zur herstellung und verwendung derselben

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties