ATE268368T1 - Planarisierungszusammensetzung zur entfernung von metallschichten - Google Patents

Planarisierungszusammensetzung zur entfernung von metallschichten

Info

Publication number
ATE268368T1
ATE268368T1 AT98915203T AT98915203T ATE268368T1 AT E268368 T1 ATE268368 T1 AT E268368T1 AT 98915203 T AT98915203 T AT 98915203T AT 98915203 T AT98915203 T AT 98915203T AT E268368 T1 ATE268368 T1 AT E268368T1
Authority
AT
Austria
Prior art keywords
weight percent
particle diameter
composition
planarising
removal
Prior art date
Application number
AT98915203T
Other languages
English (en)
Inventor
James E Currie
Michael Jones
Thomas J Grebinski
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE268368T1 publication Critical patent/ATE268368T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Detergent Compositions (AREA)
AT98915203T 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten ATE268368T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/825,769 US5993685A (en) 1997-04-02 1997-04-02 Planarization composition for removing metal films
PCT/US1998/006360 WO1998044061A1 (en) 1997-04-02 1998-03-31 Planarization composition for removing metal films

Publications (1)

Publication Number Publication Date
ATE268368T1 true ATE268368T1 (de) 2004-06-15

Family

ID=25244880

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98915203T ATE268368T1 (de) 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten

Country Status (9)

Country Link
US (2) US5993685A (de)
EP (1) EP0971993B1 (de)
JP (1) JP4489191B2 (de)
KR (1) KR100505860B1 (de)
AT (1) ATE268368T1 (de)
AU (1) AU6944598A (de)
DE (1) DE69824282T2 (de)
TW (1) TW565605B (de)
WO (1) WO1998044061A1 (de)

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US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
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US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
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FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
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JP4526777B2 (ja) * 2003-04-04 2010-08-18 ニッタ・ハース株式会社 水性コンディショニング液およびコンディショニング法
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US20050211952A1 (en) * 2004-03-29 2005-09-29 Timothy Mace Compositions and methods for chemical mechanical planarization of tungsten and titanium
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
JP2008546214A (ja) * 2005-06-06 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス
KR101467585B1 (ko) * 2006-04-26 2014-12-01 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 공정 시스템의 세정
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
US8778210B2 (en) * 2006-12-21 2014-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
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JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
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CN103154321B (zh) 2010-10-06 2015-11-25 安格斯公司 选择性蚀刻金属氮化物的组合物及方法
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KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 Entegris, Inc. 移除離子植入抗蝕劑之非氧化強酸類之用途
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
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Also Published As

Publication number Publication date
KR100505860B1 (ko) 2005-08-04
EP0971993A1 (de) 2000-01-19
WO1998044061A1 (en) 1998-10-08
US6267909B1 (en) 2001-07-31
TW565605B (en) 2003-12-11
US5993685A (en) 1999-11-30
JP2001518948A (ja) 2001-10-16
DE69824282D1 (de) 2004-07-08
JP4489191B2 (ja) 2010-06-23
DE69824282T2 (de) 2005-06-23
KR20010005976A (ko) 2001-01-15
EP0971993B1 (de) 2004-06-02
AU6944598A (en) 1998-10-22

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