ATE268368T1 - Planarisierungszusammensetzung zur entfernung von metallschichten - Google Patents

Planarisierungszusammensetzung zur entfernung von metallschichten

Info

Publication number
ATE268368T1
ATE268368T1 AT98915203T AT98915203T ATE268368T1 AT E268368 T1 ATE268368 T1 AT E268368T1 AT 98915203 T AT98915203 T AT 98915203T AT 98915203 T AT98915203 T AT 98915203T AT E268368 T1 ATE268368 T1 AT E268368T1
Authority
AT
Austria
Prior art keywords
weight percent
particle diameter
composition
planarising
removal
Prior art date
Application number
AT98915203T
Other languages
English (en)
Inventor
James E Currie
Michael Jones
Thomas J Grebinski
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE268368T1 publication Critical patent/ATE268368T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Detergent Compositions (AREA)
AT98915203T 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten ATE268368T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/825,769 US5993685A (en) 1997-04-02 1997-04-02 Planarization composition for removing metal films
PCT/US1998/006360 WO1998044061A1 (en) 1997-04-02 1998-03-31 Planarization composition for removing metal films

Publications (1)

Publication Number Publication Date
ATE268368T1 true ATE268368T1 (de) 2004-06-15

Family

ID=25244880

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98915203T ATE268368T1 (de) 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten

Country Status (9)

Country Link
US (2) US5993685A (de)
EP (1) EP0971993B1 (de)
JP (1) JP4489191B2 (de)
KR (1) KR100505860B1 (de)
AT (1) ATE268368T1 (de)
AU (1) AU6944598A (de)
DE (1) DE69824282T2 (de)
TW (1) TW565605B (de)
WO (1) WO1998044061A1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
US6210257B1 (en) * 1998-05-29 2001-04-03 Micron Technology, Inc. Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
FR2781922B1 (fr) * 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
US6383905B2 (en) * 1998-07-31 2002-05-07 Stmicroelectronics, Inc. Formation of micro rough poly surface for low sheet resistance salicided sub-quarter micron poly lines
US6863593B1 (en) 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
US6261158B1 (en) 1998-12-16 2001-07-17 Speedfam-Ipec Multi-step chemical mechanical polishing
KR20010111261A (ko) * 1999-02-18 2001-12-17 갤반 마틴 유전율이 낮은 중합체 층의 ｃｍｐ법
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6599173B1 (en) * 2000-06-30 2003-07-29 International Business Machines Corporation Method to prevent leaving residual metal in CMP process of metal interconnect
US6461227B1 (en) 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US20030104770A1 (en) 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US7008554B2 (en) 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US6821881B2 (en) 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
KR100421928B1 (ko) * 2001-11-21 2004-03-11 제일모직주식회사 반도체 웨이퍼의 금속배선 연마용 슬러리 조성물
FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
WO2003104900A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
KR100497608B1 (ko) * 2002-08-05 2005-07-01 삼성전자주식회사 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법
KR100495975B1 (ko) * 2002-09-25 2005-06-16 주식회사 동진쎄미켐 텅스텐 금속막 연마용 화학-기계적 연마 슬러리 조성물
TWI295950B (en) 2002-10-03 2008-04-21 Applied Materials Inc Method for reducing delamination during chemical mechanical polishing
WO2004037937A1 (en) * 2002-10-22 2004-05-06 Psiloquest, Inc. A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
JP4526777B2 (ja) * 2003-04-04 2010-08-18 ニッタ・ハース株式会社 水性コンディショニング液およびコンディショニング法
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20050211952A1 (en) * 2004-03-29 2005-09-29 Timothy Mace Compositions and methods for chemical mechanical planarization of tungsten and titanium
US20050214191A1 (en) * 2004-03-29 2005-09-29 Mueller Brian L Abrasives and compositions for chemical mechanical planarization of tungsten and titanium
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
JP2008546214A (ja) * 2005-06-06 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス
CN101473073B (zh) * 2006-04-26 2012-08-08 高级技术材料公司 半导体加工系统的清洁
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
US8778210B2 (en) 2006-12-21 2014-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
US20080261402A1 (en) * 2007-04-17 2008-10-23 United Microelectronics Corp. Method of removing insulating layer on substrate
SG188150A1 (en) 2008-02-11 2013-03-28 Advanced Tech Materials Ion source cleaning in semiconductor processing systems
US10160093B2 (en) 2008-12-12 2018-12-25 Applied Materials, Inc. Carrier head membrane roughness to control polishing rate
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
TWI558818B (zh) 2010-08-20 2016-11-21 恩特葛瑞斯股份有限公司 從電子廢棄物再生貴金屬和卑金屬之永續製程
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
TWI655273B (zh) 2013-03-04 2019-04-01 美商恩特葛瑞斯股份有限公司 選擇性蝕刻氮化鈦之組成物及方法
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
CN105492576B (zh) 2013-08-30 2019-01-04 恩特格里斯公司 选择性蚀刻氮化钛的组合物和方法
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
SG10201805234YA (en) 2013-12-20 2018-08-30 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1752163A1 (de) * 1968-04-11 1971-05-13 Wacker Chemie Gmbh Verfahren zum Polieren von Halbleiteroberflaechen
JPS6374911A (ja) * 1986-09-19 1988-04-05 Shin Etsu Chem Co Ltd 微細球状シリカの製造法
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
SU1701759A1 (ru) * 1989-11-20 1991-12-30 Черновицкий Государственный Университет Им.Ю.Федьковича Композици дл химико-механической полировки поверхности полупроводниковых кристаллов
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
JPH0794455A (ja) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd 配線の形成方法
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
EP0792515A1 (de) * 1994-11-18 1997-09-03 Advanced Micro Devices, Inc. Verfahren zum herstellen einer chemisch-mechanischen polieraufschlämmung und die polieraufschlämmung
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5654216A (en) * 1996-04-08 1997-08-05 Chartered Semiconductor Manufacturing Pte Ltd. Formation of a metal via structure from a composite metal layer
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films

Also Published As

Publication number Publication date
KR20010005976A (ko) 2001-01-15
TW565605B (en) 2003-12-11
US5993685A (en) 1999-11-30
WO1998044061A1 (en) 1998-10-08
KR100505860B1 (ko) 2005-08-04
DE69824282D1 (de) 2004-07-08
EP0971993A1 (de) 2000-01-19
AU6944598A (en) 1998-10-22
JP4489191B2 (ja) 2010-06-23
EP0971993B1 (de) 2004-06-02
DE69824282T2 (de) 2005-06-23
JP2001518948A (ja) 2001-10-16
US6267909B1 (en) 2001-07-31

Similar Documents

Publication Publication Date Title
ATE268368T1 (de) Planarisierungszusammensetzung zur entfernung von metallschichten
TW501197B (en) Polishing compound for chemical mechanical polishing and method for polishing substrate
EP1800801A3 (de) Einen Schleifmittelzusatz enthaltendes Schleifmittel und Verfahren zu seiner Herstellung
ID17160A (id) Aditif fluorida yang mengandung bubur pemoles mekanis-kimia dan metode penggunaan bahan tersebut
ATE18139T1 (de) Filterhilfsmittel, verfahren zu ihrer herstellung und filter fuer ihre verwendung.
DE60008025D1 (de) Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen
AU5056185A (en) Method for refining glyceride oils using amorphous silica
RU2006104117A (ru) Абразивные частицы для механической полировки
AU3179597A (en) Silica which can be used in toothpaste compositions
WO2003025085A1 (en) Cerium-based abrasive material slurry and method for producing cerium-based abrasive material slurry
EP0964023A3 (de) Silikondispersion,Zusammensetzung und Verfahren zur Herstellung
SG44763A1 (en) Magnetic toner process cartridge and image forming method
DE69410361D1 (de) Zusammensetzungen und Verfahren zur Verbesserung zur Trennung von Feststoffen aus Dispersionen von Teilchen in Flüssigkeit
EP0396499A3 (de) Galliumteilchen enthaltende flüssige Suspensionszusammensetzung und Verfahren zu ihrer Herstellung
KR950025903A (ko) 기계적 및 화학적 연마 방법 및 그 연마 장치
EP0728531A4 (de) Verfahren zur herstellung einer schicht aus teilhen auf einem substrat, verfahren zum glatten unregelmassiger substratoberflachen und teilchenbeschichtiges substrat
WO2002020214A3 (en) Method for polishing a memory or rigid disk with a polishing composition containing an oxidized halide and an acid
EP0119179A1 (de) Pumpbare Kompositionen für Wasserreinigung die Eisen(II)sulfat enthalten und Verfahren zur Herstellung derselben
EP0853065A3 (de) Behandlung keramischer Materialien
EP1355198A3 (de) Toner, Bilderzeugungsmethode unter Anwendung des Toners und Prozesskartusche
EP0982379A3 (de) Verfahren und vorrichtung zur modifizierung von Partikeloberflächen
MXPA02005881A (es) Procedimiento para fraccionar una suspension para mecanizado por arranque de viruta.
EP1298233A3 (de) System und Verfahren zur Elektroplattierung von feinen Geometrien
JP3478321B2 (ja) 活性汚泥沈降促進剤、およびそれを用いた排水の活性汚泥処理方法
ATE210073T1 (de) Hydrophile diamantteilchen und verfahren zu ihrer herstellung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties