ATE276587T1 - Wortleitungstreiberschaltung mit ringförmiger vorrichtung - Google Patents

Wortleitungstreiberschaltung mit ringförmiger vorrichtung

Info

Publication number
ATE276587T1
ATE276587T1 AT99306023T AT99306023T ATE276587T1 AT E276587 T1 ATE276587 T1 AT E276587T1 AT 99306023 T AT99306023 T AT 99306023T AT 99306023 T AT99306023 T AT 99306023T AT E276587 T1 ATE276587 T1 AT E276587T1
Authority
AT
Austria
Prior art keywords
word line
driver circuit
line driver
annual device
shaped portions
Prior art date
Application number
AT99306023T
Other languages
English (en)
Inventor
Heinz Hoenigschmid
Dmitry Netis
Original Assignee
Ibm
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Siemens Ag filed Critical Ibm
Application granted granted Critical
Publication of ATE276587T1 publication Critical patent/ATE276587T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Road Signs Or Road Markings (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT99306023T 1998-08-25 1999-07-29 Wortleitungstreiberschaltung mit ringförmiger vorrichtung ATE276587T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/139,514 US6236258B1 (en) 1998-08-25 1998-08-25 Wordline driver circuit using ring-shaped devices

Publications (1)

Publication Number Publication Date
ATE276587T1 true ATE276587T1 (de) 2004-10-15

Family

ID=22487032

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99306023T ATE276587T1 (de) 1998-08-25 1999-07-29 Wortleitungstreiberschaltung mit ringförmiger vorrichtung

Country Status (7)

Country Link
US (1) US6236258B1 (de)
EP (1) EP0982777B1 (de)
JP (1) JP3304317B2 (de)
KR (1) KR100375885B1 (de)
AT (1) ATE276587T1 (de)
DE (1) DE69920121T2 (de)
TW (1) TW421877B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319979A (ja) * 2000-05-08 2001-11-16 Nec Microsystems Ltd 半導体集積回路装置のコンタクト配置構造
DE10203152C1 (de) * 2002-01-28 2003-10-23 Infineon Technologies Ag Speichervorrichtung
US6768143B1 (en) 2003-08-26 2004-07-27 International Business Machines Corporation Structure and method of making three finger folded field effect transistors having shared junctions
JP4632287B2 (ja) * 2003-10-06 2011-02-16 株式会社日立製作所 半導体集積回路装置
US7960833B2 (en) 2003-10-22 2011-06-14 Marvell World Trade Ltd. Integrated circuits and interconnect structure for integrated circuits
US7851872B2 (en) 2003-10-22 2010-12-14 Marvell World Trade Ltd. Efficient transistor structure
KR100586549B1 (ko) * 2004-12-02 2006-06-08 주식회사 하이닉스반도체 포토 마스크 및 이를 이용한 패턴 제조 방법
JP2007243081A (ja) * 2006-03-13 2007-09-20 Hitachi Ltd 薄膜トランジスタ基板及び薄膜トランジスタ基板の生成方法
TWI407566B (zh) * 2006-05-08 2013-09-01 Marvell World Trade Ltd 有效率電晶體結構
CN101452936B (zh) * 2007-12-06 2011-12-14 上海华虹Nec电子有限公司 单源多漏的mos器件
KR101857729B1 (ko) * 2011-06-17 2018-06-20 삼성전자주식회사 반도체 장치
KR102643111B1 (ko) 2016-07-05 2024-03-04 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
CN107342316B (zh) * 2017-06-27 2019-11-12 成都海威华芯科技有限公司 一种矩阵排列的环形fet器件
CN107134485B (zh) * 2017-06-27 2019-11-12 成都海威华芯科技有限公司 一种环形fet器件
US10846458B2 (en) 2018-08-30 2020-11-24 Taiwan Semiconductor Manufacturing Company Ltd. Engineering change order cell structure having always-on transistor
US10748600B2 (en) 2018-12-11 2020-08-18 Micron Technologies, Inc. Phase charge sharing reduction

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138281A (en) * 1977-05-09 1978-12-02 Nec Corp Insulated-gate field effect transistor
EP0014388B1 (de) * 1979-01-25 1983-12-21 Nec Corporation Halbleiterspeicher-Vorrichtung
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
US4700328A (en) 1985-07-11 1987-10-13 Intel Corporation High speed and high efficiency layout for dram circuits
JPS6281054A (ja) 1985-10-04 1987-04-14 Nec Corp 半導体装置
JP2679074B2 (ja) 1988-01-27 1997-11-19 富士電機株式会社 電界効果トランジスタ
US5477467A (en) 1989-07-17 1995-12-19 Motorola, Inc. Shrinkable BiCMOS circuit layout
US5231590A (en) 1989-10-13 1993-07-27 Zilog, Inc. Technique for modifying an integrated circuit layout
JPH07105449B2 (ja) 1990-02-16 1995-11-13 三菱電機株式会社 半導体記憶装置
US5288653A (en) * 1991-02-27 1994-02-22 Nec Corporation Process of fabricating an insulated-gate field effect transistor
US5567553A (en) 1994-07-12 1996-10-22 International Business Machines Corporation Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures

Also Published As

Publication number Publication date
US6236258B1 (en) 2001-05-22
DE69920121T2 (de) 2005-10-13
KR20000017482A (ko) 2000-03-25
EP0982777A1 (de) 2000-03-01
TW421877B (en) 2001-02-11
DE69920121D1 (de) 2004-10-21
JP3304317B2 (ja) 2002-07-22
JP2000077630A (ja) 2000-03-14
EP0982777B1 (de) 2004-09-15
KR100375885B1 (ko) 2003-03-15

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Legal Events

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