ATE282901T1 - Verbesserungen im bezug auf halbleiterlaser - Google Patents

Verbesserungen im bezug auf halbleiterlaser

Info

Publication number
ATE282901T1
ATE282901T1 AT02716151T AT02716151T ATE282901T1 AT E282901 T1 ATE282901 T1 AT E282901T1 AT 02716151 T AT02716151 T AT 02716151T AT 02716151 T AT02716151 T AT 02716151T AT E282901 T1 ATE282901 T1 AT E282901T1
Authority
AT
Austria
Prior art keywords
semiconductor laser
waveguide
electrical contact
optical waveguide
shorter
Prior art date
Application number
AT02716151T
Other languages
English (en)
Inventor
Craig James Hamilton
John Haig Marsh
Original Assignee
Univ Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Glasgow filed Critical Univ Glasgow
Application granted granted Critical
Publication of ATE282901T1 publication Critical patent/ATE282901T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AT02716151T 2001-01-23 2002-01-23 Verbesserungen im bezug auf halbleiterlaser ATE282901T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101641A GB2371405B (en) 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers
PCT/GB2002/000290 WO2002060023A1 (en) 2001-01-23 2002-01-23 Improvements in or relating to semiconductor lasers

Publications (1)

Publication Number Publication Date
ATE282901T1 true ATE282901T1 (de) 2004-12-15

Family

ID=9907275

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02716151T ATE282901T1 (de) 2001-01-23 2002-01-23 Verbesserungen im bezug auf halbleiterlaser

Country Status (9)

Country Link
US (1) US6717971B2 (de)
EP (1) EP1356553B1 (de)
JP (1) JP2004520710A (de)
CN (1) CN1224147C (de)
AT (1) ATE282901T1 (de)
DE (1) DE60201974T2 (de)
ES (1) ES2236499T3 (de)
GB (1) GB2371405B (de)
WO (1) WO2002060023A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7173953B2 (en) * 2001-11-06 2007-02-06 Bookham Technology Plc Anti-reflection coatings for semiconductor lasers
GB2387481B (en) * 2002-04-10 2005-08-31 Intense Photonics Ltd Integrated active photonic device and photodetector
US6878959B2 (en) * 2002-11-22 2005-04-12 Agilent Technologies, Inc. Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
US10261321B2 (en) 2005-11-08 2019-04-16 Lumus Ltd. Polarizing optical system
JP2008198944A (ja) * 2007-02-15 2008-08-28 Fujitsu Ltd 半導体光集積素子
DE102007026925A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung
CN101105503B (zh) * 2007-06-02 2010-10-27 中北大学 捷联式惯导测量组合中加速度计装配误差标量修正方法
JP4971235B2 (ja) * 2008-04-08 2012-07-11 日本電信電話株式会社 半導体光集積素子
DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
US8232114B2 (en) * 2009-01-27 2012-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. RTP spike annealing for semiconductor substrate dopant activation
JP2012015266A (ja) * 2010-06-30 2012-01-19 Sony Corp 半導体光増幅器
ES2396103B1 (es) * 2011-07-05 2014-01-30 Abengoa Solar New Technologies, S.A. Planta solar.
ES2396109B1 (es) * 2011-07-05 2013-12-27 Abengoa Solar New Technologies, S.A. Dispositivo para la transformación de energía solar concentrada.
US8927306B2 (en) * 2013-02-28 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Etched-facet lasers having windows with single-layer optical coatings
US8988770B2 (en) * 2013-03-14 2015-03-24 Oracle International Corporation Hybrid optical source with semiconductor reflector
CN104201566B (zh) * 2014-08-22 2017-12-29 华中科技大学 一种具有高单纵模成品率的脊波导分布反馈半导体激光器
CN104184045B (zh) * 2014-08-22 2017-04-05 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器
DE102015105438A1 (de) * 2015-04-09 2016-10-13 M2K-Laser Gmbh Monolithische Diodenlaseranordnung
KR102310397B1 (ko) 2016-11-08 2021-10-08 루머스 리미티드 광학 컷오프 에지를 구비한 도광 장치 및 그 제조 방법
TWI609541B (zh) * 2016-12-12 2017-12-21 聯亞光電工業股份有限公司 半導體雷射裝置
FR3067866B1 (fr) * 2017-06-19 2022-01-14 Commissariat Energie Atomique Composant laser semiconducteur hybride et procede de fabrication d'un tel composant
TWI770234B (zh) 2017-07-19 2022-07-11 以色列商魯姆斯有限公司 通過光導光學元件的矽基液晶照明器
WO2019067455A1 (en) * 2017-09-28 2019-04-04 Masseta Technologies Llc LASER ARCHITECTURES USING QUANTUM WELL MIX TECHNIQUES
US10551544B2 (en) 2018-01-21 2020-02-04 Lumus Ltd. Light-guide optical element with multiple-axis internal aperture expansion
IL259518B2 (en) 2018-05-22 2023-04-01 Lumus Ltd Optical system and method for improving light field uniformity
EP4685545A3 (de) 2018-09-09 2026-03-25 Lumus Ltd. Optische systeme mit optischen lichtleiterelementen mit zweidimensionaler expansion
CN113474715A (zh) 2019-02-28 2021-10-01 鲁姆斯有限公司 紧凑型准直图像投影仪
CA3155597C (en) 2019-12-08 2023-02-14 Lumus Ltd. Optical systems with compact image projector
EP4128453A4 (de) * 2020-04-03 2024-04-17 Automotive Coalition for Traffic Safety, Inc. Breit abstimmbarer einmoden-emissions-halbleiterlaser
WO2021229563A1 (en) 2020-05-12 2021-11-18 Lumus Ltd. Rotatable lightpipe
US12222508B2 (en) 2020-08-26 2025-02-11 Lumus Ltd. Generation of color images using white light as source
TWI894344B (zh) 2020-08-30 2025-08-21 以色列商魯姆斯有限公司 具有中間圖像平面的反射ｓｌｍ圖像投影儀
DE202021104723U1 (de) 2020-09-11 2021-10-18 Lumus Ltd. An ein optisches Lichtleiterelement gekoppelter Bildprojektor
US12204155B2 (en) 2021-09-24 2025-01-21 Apple Inc. Chip-to-chip optical coupling for photonic integrated circuits
US12426139B1 (en) 2022-06-27 2025-09-23 Apple Inc. Feedback control of a diode element
JP2025526202A (ja) 2022-08-18 2025-08-12 ルムス エルティーディー． 偏光カタディオプトリックコリメータを備えた画像プロジェクタ
CN119965680B (zh) * 2024-12-26 2025-11-14 中山大学 一种半导体光放大器及其制备方法
CN120824629B (zh) * 2025-09-16 2025-12-23 度亘核芯光电技术(苏州)股份有限公司 一种激光器及其制备方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624397B2 (de) * 1972-07-21 1981-06-05
JPS54115088A (en) 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
US4511408A (en) 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
JPS586191A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 半導体レ−ザ装置
US4594603A (en) 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4639275A (en) 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
JPS58192394A (ja) * 1982-05-07 1983-11-09 Hitachi Ltd 半導体レ−ザ装置
JPS5944884A (ja) * 1982-09-06 1984-03-13 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体接合レ−ザ
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
US4585491A (en) 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4684653A (en) 1985-03-08 1987-08-04 The Trustees Of Princeton University Pyrido(2,3-d)pyrimidine derivatives
US4727556A (en) 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
US4871690A (en) 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
DE3751535T2 (de) * 1986-07-25 1996-02-22 Mitsubishi Electric Corp Halbleiterlaser.
GB2198603A (en) 1986-12-05 1988-06-15 Philips Electronic Associated Divider circuit
JPH0648742B2 (ja) * 1987-02-09 1994-06-22 日本電気株式会社 半導体レ−ザの製造方法
US4857971A (en) 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
US4845725A (en) * 1987-05-20 1989-07-04 Spectra Diode Laboratories, Inc. Window laser with high power reduced divergence output
US4764934A (en) * 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
DE68926029T2 (de) * 1988-12-21 1996-09-12 Optical Measurement Technology Optische Halbleitervorrichtung
JPH0448792A (ja) * 1990-06-15 1992-02-18 Anritsu Corp 窓領域を有する半導体能動光素子
JP3142333B2 (ja) * 1991-12-17 2001-03-07 株式会社東芝 分布帰還型半導体レ−ザ及びその駆動方法
US5384797A (en) 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JPH09326504A (ja) * 1996-06-06 1997-12-16 Nippon Telegr & Teleph Corp <Ntt> スーパールミネッセントダイオード
JPH10163563A (ja) * 1996-11-29 1998-06-19 Furukawa Electric Co Ltd:The 半導体レーザ
FR2770938B1 (fr) * 1997-11-10 1999-12-10 Alsthom Cge Alcatel Amplificateur optique semi-conducteur et source laser integree l'incorporant
US6052397A (en) * 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
JPH11354880A (ja) * 1998-06-03 1999-12-24 Rohm Co Ltd 半導体レーザ素子およびその製造方法
GB0018576D0 (en) * 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser

Also Published As

Publication number Publication date
US20020097762A1 (en) 2002-07-25
DE60201974T2 (de) 2005-12-15
CN1224147C (zh) 2005-10-19
WO2002060023A1 (en) 2002-08-01
GB0101641D0 (en) 2001-03-07
GB2371405B (en) 2003-10-15
EP1356553A1 (de) 2003-10-29
ES2236499T3 (es) 2005-07-16
EP1356553B1 (de) 2004-11-17
US6717971B2 (en) 2004-04-06
DE60201974D1 (de) 2004-12-23
JP2004520710A (ja) 2004-07-08
CN1488183A (zh) 2004-04-07
GB2371405A (en) 2002-07-24

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