ATE284091T1 - Integrierter akustischer dünnfilmresonator - Google Patents
Integrierter akustischer dünnfilmresonatorInfo
- Publication number
- ATE284091T1 ATE284091T1 AT99202912T AT99202912T ATE284091T1 AT E284091 T1 ATE284091 T1 AT E284091T1 AT 99202912 T AT99202912 T AT 99202912T AT 99202912 T AT99202912 T AT 99202912T AT E284091 T1 ATE284091 T1 AT E284091T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- substrate
- resonator
- passive device
- noise isolator
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9986498P | 1998-09-11 | 1998-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE284091T1 true ATE284091T1 (de) | 2004-12-15 |
Family
ID=22276990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99202912T ATE284091T1 (de) | 1998-09-11 | 1999-09-09 | Integrierter akustischer dünnfilmresonator |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6297515B1 (de) |
| EP (1) | EP0986172B1 (de) |
| JP (1) | JP2000101386A (de) |
| AT (1) | ATE284091T1 (de) |
| DE (1) | DE69922311T2 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19931297A1 (de) * | 1999-07-07 | 2001-01-11 | Philips Corp Intellectual Pty | Volumenwellen-Filter |
| GB0014963D0 (en) * | 2000-06-20 | 2000-08-09 | Koninkl Philips Electronics Nv | A bulk acoustic wave device |
| US6496085B2 (en) * | 2001-01-02 | 2002-12-17 | Nokia Mobile Phones Ltd | Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror |
| FR2823032B1 (fr) * | 2001-04-03 | 2003-07-11 | St Microelectronics Sa | Resonateur electromecanique a poutre vibrante |
| DE20221966U1 (de) * | 2002-06-06 | 2010-02-25 | Epcos Ag | Mit akustischen Wellen arbeitendes Bauelement mit einem Anpaßnetzwerk |
| FR2890490A1 (fr) * | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
| JP2007129391A (ja) * | 2005-11-02 | 2007-05-24 | Matsushita Electric Ind Co Ltd | 音響共振器及びフィルタ |
| JP4804961B2 (ja) * | 2006-03-03 | 2011-11-02 | オリンパスメディカルシステムズ株式会社 | 超音波振動子及びそれを搭載した体腔内超音波診断装置 |
| US9299914B2 (en) | 2011-04-01 | 2016-03-29 | Renesas Electronics Corporation | Semiconductor device, manufacturing method of the same, and mobile phone |
| JP6368298B2 (ja) * | 2015-12-14 | 2018-08-01 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
| WO2021015816A1 (en) * | 2019-07-19 | 2021-01-28 | Iqe Plc | Semiconductor material having tunable permittivity and tunable thermal conductivity |
| US20220140812A1 (en) * | 2020-10-30 | 2022-05-05 | RF360 Europe GmbH | Multi mirror stack |
| CN121585125A (zh) * | 2022-12-30 | 2026-02-27 | 泉州市三安集成电路有限公司 | 一种滤波器器件 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367308A (en) * | 1992-05-29 | 1994-11-22 | Iowa State University Research Foundation, Inc. | Thin film resonating device |
| US5864261A (en) * | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
| US5821833A (en) * | 1995-12-26 | 1998-10-13 | Tfr Technologies, Inc. | Stacked crystal filter device and method of making |
| US5936150A (en) * | 1998-04-13 | 1999-08-10 | Rockwell Science Center, Llc | Thin film resonant chemical sensor with resonant acoustic isolator |
| US6114635A (en) * | 1998-07-14 | 2000-09-05 | Tfr Technologies, Inc. | Chip-scale electronic component package |
| US6107721A (en) * | 1999-07-27 | 2000-08-22 | Tfr Technologies, Inc. | Piezoelectric resonators on a differentially offset reflector |
-
1999
- 1999-09-09 AT AT99202912T patent/ATE284091T1/de not_active IP Right Cessation
- 1999-09-09 DE DE69922311T patent/DE69922311T2/de not_active Expired - Lifetime
- 1999-09-09 EP EP99202912A patent/EP0986172B1/de not_active Expired - Lifetime
- 1999-09-10 US US09/393,777 patent/US6297515B1/en not_active Expired - Lifetime
- 1999-09-10 JP JP11257524A patent/JP2000101386A/ja not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE69922311T2 (de) | 2005-12-01 |
| JP2000101386A (ja) | 2000-04-07 |
| EP0986172A2 (de) | 2000-03-15 |
| DE69922311D1 (de) | 2005-01-05 |
| EP0986172B1 (de) | 2004-12-01 |
| US6297515B1 (en) | 2001-10-02 |
| EP0986172A3 (de) | 2000-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE284091T1 (de) | Integrierter akustischer dünnfilmresonator | |
| US4556812A (en) | Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate | |
| EP1180494A3 (de) | Herstellung von Dünnschichtresonatoren durch Freiätzung von Oberseiten darunterliegender Membranen | |
| KR960036122A (ko) | 반도체 장치 및 그 제조 방법 | |
| KR920008849A (ko) | 반도체 장치 제조방법 | |
| CA2072247A1 (en) | Optical integrated circuitry | |
| EP0911965A3 (de) | Komplexes elektronisches Bauteil | |
| EP0974817A4 (de) | Schaltungsplatine,detektor sowie verfahren zu ihrer herstellung | |
| KR970018759A (ko) | 반도체 발광소자 및 그 제조방법 | |
| JPH1174257A5 (de) | ||
| CA2166014A1 (en) | High Power Superconductive Circuits and Method of Construction Thereof | |
| KR960002909A (ko) | 반도체 수광소자 및 반도체장치와 그들의 제작방법 | |
| WO2002071560A3 (en) | Separating of optical integrated modules and structures formed thereby | |
| KR950015677A (ko) | 반도체장치의 제조방법 | |
| MY136656A (en) | Film bulk acoustic resonator structure and method of making | |
| WO2004030208A3 (en) | Fabrication of film bulk acoustic resonators on silicon <110> wafers using crystal-orientation-dependent anisotropic etching | |
| EP1148543A3 (de) | Halbleiteranordnung und Herstellungsverfahren | |
| JPH0964675A (ja) | 密閉空洞上の圧電共振器および製造方法 | |
| SE9000245L (sv) | Halvledarkomponent och foerfarande foer dess framstaellning | |
| KR900017129A (ko) | 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법 | |
| KR910010722A (ko) | 반도체기억장치 | |
| EP1139427A3 (de) | Integrierter Halbleiterschaltkreis mit Standardzellenverwendung | |
| CA2051778A1 (en) | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby | |
| JPH10107318A5 (de) | ||
| JPS6066851A (ja) | 集積回路用コンデンサ及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |