ATE288949T1 - Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung - Google Patents

Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung

Info

Publication number
ATE288949T1
ATE288949T1 AT99959933T AT99959933T ATE288949T1 AT E288949 T1 ATE288949 T1 AT E288949T1 AT 99959933 T AT99959933 T AT 99959933T AT 99959933 T AT99959933 T AT 99959933T AT E288949 T1 ATE288949 T1 AT E288949T1
Authority
AT
Austria
Prior art keywords
slurry
polishing
cerium oxide
producing
mus
Prior art date
Application number
AT99959933T
Other languages
English (en)
Inventor
Takanori Kido
Masayuki Sanbayashi
Fumio Tsujino
Kagetaka Ichikawa
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE288949T1 publication Critical patent/ATE288949T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT99959933T 1998-12-21 1999-12-21 Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung ATE288949T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP36270798 1998-12-21
US13637199P 1999-05-26 1999-05-26
JP33110799A JP3983949B2 (ja) 1998-12-21 1999-11-22 研磨用酸化セリウムスラリー、その製造法及び研磨方法
PCT/JP1999/007166 WO2000037578A1 (en) 1998-12-21 1999-12-21 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry

Publications (1)

Publication Number Publication Date
ATE288949T1 true ATE288949T1 (de) 2005-02-15

Family

ID=27340458

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99959933T ATE288949T1 (de) 1998-12-21 1999-12-21 Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung

Country Status (8)

Country Link
US (2) US6478836B1 (de)
EP (1) EP1056816B1 (de)
JP (1) JP3983949B2 (de)
AT (1) ATE288949T1 (de)
DE (1) DE69923666T2 (de)
ES (1) ES2235540T3 (de)
TW (1) TW531555B (de)
WO (1) WO2000037578A1 (de)

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WO2001000744A1 (en) * 1999-06-28 2001-01-04 Nissan Chemical Industries, Ltd. Abrasive compound for glass hard disk platter
WO2002028979A1 (en) * 2000-10-02 2002-04-11 Mitsui Mining & Smelting Co.,Ltd. Cerium based abrasive material and method for producing cerium based abrasive material
US7037352B2 (en) * 2000-12-12 2006-05-02 Showa Denko Kabushiki Kaisha Polishing particle and method for producing polishing particle
EP2418258A1 (de) * 2001-02-20 2012-02-15 Hitachi Chemical Company, Ltd. Polierschmiere und Verfahren zum Polieren eines Substrats
TWI272249B (en) * 2001-02-27 2007-02-01 Nissan Chemical Ind Ltd Crystalline ceric oxide sol and process for producing the same
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
US7666239B2 (en) * 2001-11-16 2010-02-23 Ferro Corporation Hydrothermal synthesis of cerium-titanium oxide for use in CMP
EP1444308B1 (de) * 2001-11-16 2011-01-12 Showa Denko K.K. Cerbasierendes poliermittel und cerbasierende poliersuspension
KR100477939B1 (ko) * 2002-04-15 2005-03-18 주식회사 엘지화학 단결정 산화세륨 분말의 제조방법
JP2004066384A (ja) * 2002-08-06 2004-03-04 Kaoru Umeya ペースト状研磨工具及び研磨方法
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
US20080219130A1 (en) * 2003-08-14 2008-09-11 Mempile Inc. C/O Phs Corporate Services, Inc. Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium
JP4913409B2 (ja) * 2003-09-12 2012-04-11 日立化成工業株式会社 セリウム塩、その製造方法、酸化セリウム及びセリウム系研磨剤
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4546071B2 (ja) * 2003-12-10 2010-09-15 パナソニック株式会社 半導体装置の製造方法
US7470295B2 (en) 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
TWI370843B (en) * 2004-03-16 2012-08-21 Samsung Corning Prec Mat Co Ceria slurry for polishing semiconductor thin layer
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
TWI273632B (en) * 2004-07-28 2007-02-11 K C Tech Co Ltd Polishing slurry, method of producing same, and method of polishing substrate
TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
JP5013671B2 (ja) * 2004-12-28 2012-08-29 日揮触媒化成株式会社 金属酸化物ゾルの製造方法および金属酸化物ゾル
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
AT502308B1 (de) * 2005-07-20 2010-03-15 Treibacher Ind Ag Glasschleifmittel auf ceroxidbasis und verfahren zu dessen herstellung
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
KR101103748B1 (ko) * 2005-09-27 2012-01-06 삼성코닝정밀소재 주식회사 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법
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JP5237542B2 (ja) * 2006-10-03 2013-07-17 三井金属鉱業株式会社 酸化セリウム系研摩材
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JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
FI20095088L (fi) * 2009-02-02 2010-08-03 Lauri Ylikorpi Päällysteen poistoaine
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
CN104130714B (zh) * 2014-07-01 2015-10-28 蚌埠市高华电子有限公司 一种含有磨料的适用于金属的混合抛光液及其制备方法
EP3020689A1 (de) * 2014-11-12 2016-05-18 Rhodia Operations Ceroxidpartikel und Verfahren zur Herstellung davon

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FR2604443A1 (fr) * 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
US5266088A (en) * 1992-09-23 1993-11-30 Nicsand Water-based polish
JP3311203B2 (ja) * 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法

Also Published As

Publication number Publication date
WO2000037578A1 (en) 2000-06-29
JP2000239654A (ja) 2000-09-05
TW531555B (en) 2003-05-11
DE69923666D1 (de) 2005-03-17
ES2235540T3 (es) 2005-07-01
DE69923666T2 (de) 2005-11-17
US6478836B1 (en) 2002-11-12
EP1056816B1 (de) 2005-02-09
JP3983949B2 (ja) 2007-09-26
EP1056816A1 (de) 2000-12-06
US6387139B1 (en) 2002-05-14
US20020032989A1 (en) 2002-03-21

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