ATE293302T1 - Halbleiterlaser mit einer vielzahl von optisch aktiven gebieten - Google Patents

Halbleiterlaser mit einer vielzahl von optisch aktiven gebieten

Info

Publication number
ATE293302T1
ATE293302T1 AT02700475T AT02700475T ATE293302T1 AT E293302 T1 ATE293302 T1 AT E293302T1 AT 02700475 T AT02700475 T AT 02700475T AT 02700475 T AT02700475 T AT 02700475T AT E293302 T1 ATE293302 T1 AT E293302T1
Authority
AT
Austria
Prior art keywords
optically active
semiconductor laser
active regions
variety
optically
Prior art date
Application number
AT02700475T
Other languages
English (en)
Inventor
John Haig Marsh
Shin-Sung Kim
Original Assignee
Univ Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Glasgow filed Critical Univ Glasgow
Application granted granted Critical
Publication of ATE293302T1 publication Critical patent/ATE293302T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT02700475T 2001-02-16 2002-02-15 Halbleiterlaser mit einer vielzahl von optisch aktiven gebieten ATE293302T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0103838.9A GB0103838D0 (en) 2001-02-16 2001-02-16 Improvements in or relating to semiconductor lasers
PCT/GB2002/000808 WO2002067392A1 (en) 2001-02-16 2002-02-15 Semiconductor laser comprising a plurality of optically active regions

Publications (1)

Publication Number Publication Date
ATE293302T1 true ATE293302T1 (de) 2005-04-15

Family

ID=9908889

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02700475T ATE293302T1 (de) 2001-02-16 2002-02-15 Halbleiterlaser mit einer vielzahl von optisch aktiven gebieten

Country Status (9)

Country Link
US (1) US20040120377A1 (de)
EP (1) EP1362395B1 (de)
JP (1) JP4194844B2 (de)
CN (1) CN1262053C (de)
AT (1) ATE293302T1 (de)
DE (1) DE60203701T2 (de)
ES (1) ES2241986T3 (de)
GB (1) GB0103838D0 (de)
WO (1) WO2002067392A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7865470B2 (en) * 2004-09-09 2011-01-04 Microsoft Corporation Method, system, and apparatus for translating logical information representative of physical data in a data protection system
US7496445B2 (en) * 2005-04-27 2009-02-24 Proxemics, Llc Wayfinding
US7567603B2 (en) * 2006-09-20 2009-07-28 Jds Uniphase Corporation Semiconductor laser diode with advanced window structure
DE102007051315B4 (de) 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
US7723139B2 (en) * 2007-10-01 2010-05-25 Corning Incorporated Quantum well intermixing
US8396091B2 (en) 2011-01-31 2013-03-12 Technische Universitat Berlin Device comprising a laser
CN104540582A (zh) * 2011-04-12 2015-04-22 康宁公司 包含量子阱混合(qwi)输出窗和波导区域的激光二极管与制造方法
CN103124046B (zh) * 2013-01-18 2015-05-13 西安卓铭光电科技有限公司 一种半导体激光器
US12525770B2 (en) 2018-12-31 2026-01-13 Nlight, Inc. Method, system and apparatus for differential current injection
TWI818580B (zh) * 2022-06-09 2023-10-11 國立清華大學 半導體元件的製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656906B2 (ja) * 1984-09-28 1994-07-27 株式会社日立製作所 半導体レ−ザ装置
JPS61218190A (ja) * 1985-03-25 1986-09-27 Agency Of Ind Science & Technol 半導体レ−ザ装置
US4751194A (en) * 1986-06-27 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Structures including quantum well wires and boxes
JPS63263788A (ja) * 1987-04-22 1988-10-31 Mitsubishi Electric Corp 半導体レ−ザ
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
US5657157A (en) * 1995-06-23 1997-08-12 Sdl, Inc. Semiconductor optical amplifying media with reduced self-focusing

Also Published As

Publication number Publication date
CN1528036A (zh) 2004-09-08
DE60203701D1 (de) 2005-05-19
EP1362395A1 (de) 2003-11-19
CN1262053C (zh) 2006-06-28
JP4194844B2 (ja) 2008-12-10
WO2002067392A1 (en) 2002-08-29
DE60203701T2 (de) 2006-03-02
GB0103838D0 (en) 2001-04-04
US20040120377A1 (en) 2004-06-24
ES2241986T3 (es) 2005-11-01
EP1362395B1 (de) 2005-04-13
JP2004523120A (ja) 2004-07-29

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