ATE295968T1 - Vorrichtungen zur stimulierten emission aus silizium-nanopartikeln - Google Patents

Vorrichtungen zur stimulierten emission aus silizium-nanopartikeln

Info

Publication number
ATE295968T1
ATE295968T1 AT00991877T AT00991877T ATE295968T1 AT E295968 T1 ATE295968 T1 AT E295968T1 AT 00991877 T AT00991877 T AT 00991877T AT 00991877 T AT00991877 T AT 00991877T AT E295968 T1 ATE295968 T1 AT E295968T1
Authority
AT
Austria
Prior art keywords
stimulated emission
devices
silicon nanoparticles
nanoparticles
nanometers
Prior art date
Application number
AT00991877T
Other languages
English (en)
Inventor
Munir H Nayfeh
Osman Akcakir
Nicholas Barry
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/426,389 external-priority patent/US6585947B1/en
Priority claimed from US09/426,204 external-priority patent/US6597496B1/en
Application filed by Univ Illinois filed Critical Univ Illinois
Application granted granted Critical
Publication of ATE295968T1 publication Critical patent/ATE295968T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3551—Crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Silicon Compounds (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT00991877T 1999-10-22 2000-10-20 Vorrichtungen zur stimulierten emission aus silizium-nanopartikeln ATE295968T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/426,389 US6585947B1 (en) 1999-10-22 1999-10-22 Method for producing silicon nanoparticles
US09/426,204 US6597496B1 (en) 1999-10-25 1999-10-25 Silicon nanoparticle stimulated emission devices
PCT/US2000/041421 WO2001031374A1 (en) 1999-10-22 2000-10-20 Silicon nanoparticle stimulated emission devices

Publications (1)

Publication Number Publication Date
ATE295968T1 true ATE295968T1 (de) 2005-06-15

Family

ID=27026970

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00991877T ATE295968T1 (de) 1999-10-22 2000-10-20 Vorrichtungen zur stimulierten emission aus silizium-nanopartikeln

Country Status (7)

Country Link
EP (1) EP1264202B1 (de)
JP (1) JP2003528445A (de)
AT (1) ATE295968T1 (de)
AU (1) AU3636501A (de)
CA (1) CA2387142C (de)
DE (1) DE60020270T8 (de)
WO (1) WO2001031374A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020110180A1 (en) 2001-02-09 2002-08-15 Barney Alfred A. Temperature-sensing composition
US6918946B2 (en) 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
WO2003003982A2 (en) * 2001-07-02 2003-01-16 Board Of Regents, University Of Texas System Light-emitting nanoparticles and method of making same
US8618595B2 (en) 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles
CA2460796C (en) * 2001-09-17 2011-02-01 Vikram C. Sundar Semiconductor nanocrystal composite
FR2837290A1 (fr) * 2002-03-15 2003-09-19 Alcatel Optronics France Dispositif d'amplification optique ultra-compact
US7319709B2 (en) 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3597624A (en) * 1969-01-30 1971-08-03 Bell Telephone Labor Inc Optical raman oscillator employing colloidal suspension or emulsion
US4878222A (en) * 1988-08-05 1989-10-31 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
US5308804A (en) * 1992-12-15 1994-05-03 Lee Huai Chuan Moving disks made of semiconductor nanocrystallite embedded glass
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
DE69519384T2 (de) * 1994-09-29 2001-05-23 British Telecomm Optische Faser mit Quantenpunkten
US5561679A (en) * 1995-04-10 1996-10-01 Ontario Hydro Radioluminescent semiconductor light source
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
US5695617A (en) * 1995-11-22 1997-12-09 Dow Corning Corporation Silicon nanoparticles

Also Published As

Publication number Publication date
WO2001031374A8 (en) 2001-06-07
WO2001031374A1 (en) 2001-05-03
JP2003528445A (ja) 2003-09-24
CA2387142C (en) 2004-10-05
EP1264202B1 (de) 2005-05-18
DE60020270D1 (de) 2005-06-23
EP1264202A4 (de) 2002-12-18
EP1264202A1 (de) 2002-12-11
DE60020270T2 (de) 2006-01-12
CA2387142A1 (en) 2001-05-03
DE60020270T8 (de) 2006-10-12
AU3636501A (en) 2001-05-08

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Legal Events

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