ATE301332T1 - Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat - Google Patents

Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat

Info

Publication number
ATE301332T1
ATE301332T1 AT02722389T AT02722389T ATE301332T1 AT E301332 T1 ATE301332 T1 AT E301332T1 AT 02722389 T AT02722389 T AT 02722389T AT 02722389 T AT02722389 T AT 02722389T AT E301332 T1 ATE301332 T1 AT E301332T1
Authority
AT
Austria
Prior art keywords
support
surface layer
labels
carrier
transfer
Prior art date
Application number
AT02722389T
Other languages
English (en)
Inventor
Christophe Figuet
Bernard Aspar
Vincent Blet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE301332T1 publication Critical patent/ATE301332T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Thin Film Transistor (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)
  • Soundproofing, Sound Blocking, And Sound Damping (AREA)
AT02722389T 2001-04-03 2002-04-02 Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat ATE301332T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0104502A FR2823012B1 (fr) 2001-04-03 2001-04-03 Procede de transfert selectif d'au moins un element d'un support initial sur un support final
PCT/FR2002/001132 WO2002082502A2 (fr) 2001-04-03 2002-04-02 Procede de transfert selectif de puces semiconductrices d'un support initial sur un support final

Publications (1)

Publication Number Publication Date
ATE301332T1 true ATE301332T1 (de) 2005-08-15

Family

ID=8861875

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02722389T ATE301332T1 (de) 2001-04-03 2002-04-02 Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat

Country Status (11)

Country Link
US (1) US6959863B2 (de)
EP (1) EP1386346B1 (de)
JP (1) JP4249490B2 (de)
KR (1) KR100878059B1 (de)
CN (1) CN1322575C (de)
AT (1) ATE301332T1 (de)
DE (1) DE60205358T2 (de)
FR (1) FR2823012B1 (de)
MY (1) MY124843A (de)
TW (1) TWI255486B (de)
WO (1) WO2002082502A2 (de)

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US6682955B2 (en) * 2002-05-08 2004-01-27 Micron Technology, Inc. Stacked die module and techniques for forming a stacked die module
US6794273B2 (en) * 2002-05-24 2004-09-21 Fujitsu Limited Semiconductor device and manufacturing method thereof
AU2003299296A1 (en) 2002-11-29 2004-06-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
US7056810B2 (en) 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
KR20060131774A (ko) * 2003-11-12 2006-12-20 크리 인코포레이티드 반도체 웨이퍼 후면들 상에 발광 소자들을 가지는 상기반도체 웨이퍼 후면들의 가공 방법들 및 상기 방법들에의해 형성된 발광 소자들
GB2412786A (en) * 2004-03-24 2005-10-05 E2V Tech Uk Ltd Method and apparatus for manufacturing chip scale components or microcomponents
FR2871291B1 (fr) * 2004-06-02 2006-12-08 Tracit Technologies Procede de transfert de plaques
FR2877142B1 (fr) * 2004-10-21 2007-05-11 Commissariat Energie Atomique Procede de transfert d'au moins un objet de taille micrometrique ou millimetrique au moyen d'une poignee en polymere.
CN100383929C (zh) * 2005-02-01 2008-04-23 矽品精密工业股份有限公司 一种半导体处理制程
US8252191B2 (en) * 2005-05-10 2012-08-28 Dow Corning Corporation Sub-micron decal transfer lithography
US7779522B2 (en) * 2006-05-05 2010-08-24 Fujifilm Dimatix, Inc. Method for forming a MEMS
US20070257580A1 (en) * 2006-05-05 2007-11-08 Fujifilm Dimatix, Inc. Polishing Piezoelectric Material
US8201325B2 (en) * 2007-11-22 2012-06-19 International Business Machines Corporation Method for producing an integrated device
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
DE112010002856B4 (de) * 2009-07-07 2021-10-28 Murata Manufacturing Co., Ltd. Vorrichtung für elastische Wellen und Verfahren zur Herstellung einer solchen Vorrichtung
US20110012239A1 (en) * 2009-07-17 2011-01-20 Qualcomm Incorporated Barrier Layer On Polymer Passivation For Integrated Circuit Packaging
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8735191B2 (en) 2012-01-04 2014-05-27 Skorpios Technologies, Inc. Method and system for template assisted wafer bonding using pedestals
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9481566B2 (en) 2012-07-31 2016-11-01 Soitec Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices
FR2995447B1 (fr) 2012-09-07 2014-09-05 Soitec Silicon On Insulator Procede de separation d'au moins deux substrats selon une interface choisie
CN103009387B (zh) * 2012-12-20 2016-05-04 华南理工大学 一种液滴微操作机械手及控制方法
KR102240810B1 (ko) 2014-08-05 2021-04-15 유니카르타, 인크. 쉬운 조립을 위한 초소형 또는 초박형 개별 컴포넌트의 구성
US9209142B1 (en) 2014-09-05 2015-12-08 Skorpios Technologies, Inc. Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal
CN113421839B (zh) * 2015-12-23 2022-03-18 歌尔股份有限公司 微发光二极管转移方法及制造方法
US9887119B1 (en) * 2016-09-30 2018-02-06 International Business Machines Corporation Multi-chip package assembly
TWI805564B (zh) 2018-01-25 2023-06-21 晶元光電股份有限公司 晶粒轉移方法及其裝置
TWI877633B (zh) * 2018-01-25 2025-03-21 晶元光電股份有限公司 晶粒轉移方法及顯示裝置製造方法
WO2021138794A1 (en) * 2020-01-07 2021-07-15 Yangtze Memory Technologies Co., Ltd. Methods for multi-wafer stacking and dicing
FR3156987A1 (fr) * 2023-12-18 2025-06-20 Wormsensing Procédé de transfert de couche fonctionnelle

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US5244818A (en) * 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
JPH0778795A (ja) * 1993-09-07 1995-03-20 Nec Yamaguchi Ltd ダイシング装置
JPH07105285A (ja) 1993-10-06 1995-04-21 Fuji Electric Co Ltd 製造ライン稼動状況モニタリングシステム
JPH07106285A (ja) * 1993-10-08 1995-04-21 Oki Electric Ind Co Ltd 半導体製造方法
US5391257A (en) * 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
JP3438369B2 (ja) * 1995-01-17 2003-08-18 ソニー株式会社 部材の製造方法
JP3197884B2 (ja) * 1995-05-18 2001-08-13 株式会社日立製作所 実装方法
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US6013534A (en) * 1997-07-25 2000-01-11 The United States Of America As Represented By The National Security Agency Method of thinning integrated circuits received in die form
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
US6036809A (en) 1999-02-16 2000-03-14 International Business Machines Corporation Process for releasing a thin-film structure from a substrate
EP1041620A3 (de) 1999-04-02 2005-01-05 Interuniversitair Microelektronica Centrum Vzw Transfermethode ultradünner Substrate und Anwendung auf die Herstellung einer Mehrlagen-Dünnschicht-Anordnung
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
US6214733B1 (en) * 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials

Also Published As

Publication number Publication date
FR2823012B1 (fr) 2004-05-21
FR2823012A1 (fr) 2002-10-04
JP4249490B2 (ja) 2009-04-02
KR20030090706A (ko) 2003-11-28
JP2004526323A (ja) 2004-08-26
TWI255486B (en) 2006-05-21
WO2002082502A3 (fr) 2003-11-06
EP1386346A2 (de) 2004-02-04
EP1386346B1 (de) 2005-08-03
KR100878059B1 (ko) 2009-01-14
US6959863B2 (en) 2005-11-01
DE60205358D1 (de) 2005-09-08
CN1322575C (zh) 2007-06-20
CN1513204A (zh) 2004-07-14
MY124843A (en) 2006-07-31
WO2002082502A2 (fr) 2002-10-17
DE60205358T2 (de) 2006-07-06
US20040104272A1 (en) 2004-06-03

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