ATE304220T1 - Verfahren zur herstellung einer t-förmigen elektrode - Google Patents

Verfahren zur herstellung einer t-förmigen elektrode

Info

Publication number
ATE304220T1
ATE304220T1 AT02001998T AT02001998T ATE304220T1 AT E304220 T1 ATE304220 T1 AT E304220T1 AT 02001998 T AT02001998 T AT 02001998T AT 02001998 T AT02001998 T AT 02001998T AT E304220 T1 ATE304220 T1 AT E304220T1
Authority
AT
Austria
Prior art keywords
lacquer
formed body
producing
metal
shaped electrode
Prior art date
Application number
AT02001998T
Other languages
English (en)
Inventor
Bernd E Dr Maile
Original Assignee
Bernd E Dr Maile
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bernd E Dr Maile filed Critical Bernd E Dr Maile
Application granted granted Critical
Publication of ATE304220T1 publication Critical patent/ATE304220T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electron Beam Exposure (AREA)
AT02001998T 2002-02-05 2002-02-05 Verfahren zur herstellung einer t-förmigen elektrode ATE304220T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02001998A EP1335418B1 (de) 2002-02-05 2002-02-05 Verfahren zur Herstellung einer T-förmigen Elektrode
DE10204621A DE10204621B8 (de) 2002-02-05 2002-02-05 Verfahren zur Herstellung einer mit einem vertikalen Profil versehenen Elektrode und eine derartige Elektrode umfassendes Halbleiterbauelement

Publications (1)

Publication Number Publication Date
ATE304220T1 true ATE304220T1 (de) 2005-09-15

Family

ID=7713698

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02001998T ATE304220T1 (de) 2002-02-05 2002-02-05 Verfahren zur herstellung einer t-förmigen elektrode

Country Status (5)

Country Link
US (1) US6881688B2 (de)
EP (1) EP1335418B1 (de)
AT (1) ATE304220T1 (de)
DE (2) DE60206012T2 (de)
TW (1) TWI254992B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7651957B2 (en) 2003-05-20 2010-01-26 Polymer Vision Limited Structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement
US7892903B2 (en) * 2004-02-23 2011-02-22 Asml Netherlands B.V. Device manufacturing method and substrate comprising multiple resist layers
DE102005002550B4 (de) * 2005-01-19 2007-02-08 Infineon Technologies Ag Lift-Off-Verfahren
JP4640047B2 (ja) * 2005-08-30 2011-03-02 沖電気工業株式会社 エッチング方法、金属膜構造体の製造方法およびエッチング構造体
KR100795242B1 (ko) * 2006-11-03 2008-01-15 학교법인 포항공과대학교 반도체 소자의 게이트 형성 방법 및 그 게이트 구조
US8158014B2 (en) * 2008-06-16 2012-04-17 International Business Machines Corporation Multi-exposure lithography employing differentially sensitive photoresist layers
US8476168B2 (en) * 2011-01-26 2013-07-02 International Business Machines Corporation Non-conformal hardmask deposition for through silicon etch
JP5768397B2 (ja) * 2011-02-16 2015-08-26 三菱電機株式会社 半導体装置の製造方法
DE102011075888B4 (de) * 2011-05-16 2014-07-10 Robert Bosch Gmbh Halbleitervorrichtung mit mindestens einem Kontakt und Herstellungsverfahren für eine Halbleitervorrichtung mit mindestens einem Kontakt
US9059095B2 (en) 2013-04-22 2015-06-16 International Business Machines Corporation Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
US9548238B2 (en) 2013-08-12 2017-01-17 Globalfoundries Inc. Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same
CN104459854B (zh) * 2013-09-22 2017-12-01 清华大学 金属光栅的制备方法
KR101736270B1 (ko) * 2014-02-14 2017-05-17 한국전자통신연구원 안정화된 게이트 구조를 갖는 반도체 소자 및 그의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238559A (en) * 1978-08-24 1980-12-09 International Business Machines Corporation Two layer resist system
US4373018A (en) * 1981-06-05 1983-02-08 Bell Telephone Laboratories, Incorporated Multiple exposure microlithography patterning method
US5053348A (en) * 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
JPH04177738A (ja) * 1990-11-09 1992-06-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0590300A (ja) * 1991-09-30 1993-04-09 Fujitsu Ltd 半導体装置の製造方法
JP2723405B2 (ja) * 1991-11-12 1998-03-09 松下電器産業株式会社 微細電極の形成方法
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.
JPH08172102A (ja) * 1994-12-20 1996-07-02 Murata Mfg Co Ltd 半導体装置の製造方法
JP3591762B2 (ja) * 1998-08-07 2004-11-24 株式会社村田製作所 パターンの形成方法

Also Published As

Publication number Publication date
EP1335418B1 (de) 2005-09-07
EP1335418A1 (de) 2003-08-13
DE60206012T2 (de) 2006-06-22
DE60206012D1 (de) 2005-10-13
US20030153178A1 (en) 2003-08-14
DE10204621B8 (de) 2010-03-25
US6881688B2 (en) 2005-04-19
TW200303056A (en) 2003-08-16
DE10204621A1 (de) 2003-08-07
TWI254992B (en) 2006-05-11
DE10204621B4 (de) 2009-11-26

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