ATE314721T1 - Ferro-elektrischer speicher und sein betriebsverfahren - Google Patents

Ferro-elektrischer speicher und sein betriebsverfahren

Info

Publication number
ATE314721T1
ATE314721T1 AT01977811T AT01977811T ATE314721T1 AT E314721 T1 ATE314721 T1 AT E314721T1 AT 01977811 T AT01977811 T AT 01977811T AT 01977811 T AT01977811 T AT 01977811T AT E314721 T1 ATE314721 T1 AT E314721T1
Authority
AT
Austria
Prior art keywords
memory
memory cells
group
ferro
cells
Prior art date
Application number
AT01977811T
Other languages
English (en)
Inventor
Zheng Chen
Yoshihisa Kato
Vikram Joshi
Myoungho Lim
De Araujo Carlos A Paz
Larry D Mcmillan
Yasuhiro Shimada
Tatsuo Otsuki
Original Assignee
Symetrix Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp, Matsushita Electric Industrial Co Ltd filed Critical Symetrix Corp
Application granted granted Critical
Publication of ATE314721T1 publication Critical patent/ATE314721T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Catalysts (AREA)
  • Saccharide Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
AT01977811T 2000-09-25 2001-09-25 Ferro-elektrischer speicher und sein betriebsverfahren ATE314721T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23524100P 2000-09-25 2000-09-25
PCT/US2001/042288 WO2002025667A2 (en) 2000-09-25 2001-09-25 Ferroelectric memory and method of operating same

Publications (1)

Publication Number Publication Date
ATE314721T1 true ATE314721T1 (de) 2006-01-15

Family

ID=22884688

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01977811T ATE314721T1 (de) 2000-09-25 2001-09-25 Ferro-elektrischer speicher und sein betriebsverfahren

Country Status (9)

Country Link
US (1) US6924997B2 (de)
EP (1) EP1325500B1 (de)
JP (1) JP2004526268A (de)
KR (1) KR100558209B1 (de)
CN (1) CN1236452C (de)
AT (1) ATE314721T1 (de)
DE (1) DE60116350T2 (de)
TW (1) TW535160B (de)
WO (1) WO2002025667A2 (de)

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Also Published As

Publication number Publication date
DE60116350D1 (de) 2006-02-02
JP2004526268A (ja) 2004-08-26
TW535160B (en) 2003-06-01
KR100558209B1 (ko) 2006-03-10
CN1466763A (zh) 2004-01-07
EP1325500A2 (de) 2003-07-09
US20040047174A1 (en) 2004-03-11
US6924997B2 (en) 2005-08-02
DE60116350T2 (de) 2006-07-13
WO2002025667A3 (en) 2002-08-22
EP1325500B1 (de) 2005-12-28
CN1236452C (zh) 2006-01-11
KR20030070886A (ko) 2003-09-02
WO2002025667A2 (en) 2002-03-28

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