NO20003507L - Fremgangsmåte til å utföre skrive og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten - Google Patents

Fremgangsmåte til å utföre skrive og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten

Info

Publication number
NO20003507L
NO20003507L NO20003507A NO20003507A NO20003507L NO 20003507 L NO20003507 L NO 20003507L NO 20003507 A NO20003507 A NO 20003507A NO 20003507 A NO20003507 A NO 20003507A NO 20003507 L NO20003507 L NO 20003507L
Authority
NO
Norway
Prior art keywords
polarization
memory cell
read
procedure
passive matrix
Prior art date
Application number
NO20003507A
Other languages
English (en)
Other versions
NO312698B1 (no
NO20003507D0 (no
Inventor
Per-Erik Nordal
Per Broems
Mats Johansson
Hans Gude Gudesen
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20003507A priority Critical patent/NO312698B1/no
Publication of NO20003507D0 publication Critical patent/NO20003507D0/no
Priority to US09/899,094 priority patent/US6606261B2/en
Priority to AU2001290357A priority patent/AU2001290357B2/en
Priority to RU2003103297/09A priority patent/RU2239888C1/ru
Priority to CN018124690A priority patent/CN1440554B/zh
Priority to ES01970356T priority patent/ES2237599T3/es
Priority to CA002415661A priority patent/CA2415661C/en
Priority to KR10-2003-7000189A priority patent/KR100522286B1/ko
Priority to PCT/NO2001/000290 priority patent/WO2002005288A1/en
Priority to DE60109472T priority patent/DE60109472T2/de
Priority to AU9035701A priority patent/AU9035701A/xx
Priority to EP01970356A priority patent/EP1323167B1/en
Priority to AT01970356T priority patent/ATE291272T1/de
Priority to DK01970356T priority patent/DK1323167T3/da
Priority to JP2002508806A priority patent/JP4542744B2/ja
Publication of NO20003507L publication Critical patent/NO20003507L/no
Publication of NO312698B1 publication Critical patent/NO312698B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Shift Register Type Memory (AREA)
NO20003507A 2000-07-07 2000-07-07 Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten NO312698B1 (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO20003507A NO312698B1 (no) 2000-07-07 2000-07-07 Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
JP2002508806A JP4542744B2 (ja) 2000-07-07 2001-07-06 受動マトリックス・メモリの読出し動作および書込み動作を実行する方法および前記方法を実行する装置
CA002415661A CA2415661C (en) 2000-07-07 2001-07-06 A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
PCT/NO2001/000290 WO2002005288A1 (en) 2000-07-07 2001-07-06 A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
RU2003103297/09A RU2239888C1 (ru) 2000-07-07 2001-07-06 Способ выполнения операций записи и считывания в памяти с пассивной матричной адресацией и устройство для осуществления этого способа
CN018124690A CN1440554B (zh) 2000-07-07 2001-07-06 用于在无源矩阵存储器中执行读写操作的方法,以及执行该方法的装置
ES01970356T ES2237599T3 (es) 2000-07-07 2001-07-06 Procedimiento para realizar operaciones de escritura y lectura en una memoria matricial pasiva y aparato para la realizacion del procedimiento.
US09/899,094 US6606261B2 (en) 2000-07-07 2001-07-06 Method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
KR10-2003-7000189A KR100522286B1 (ko) 2000-07-07 2001-07-06 패시브 매트릭스 메모리에서 판독 및 기록 동작을 수행하는 방법 및 이를 수행하는 장치
AU2001290357A AU2001290357B2 (en) 2000-07-07 2001-07-06 A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
DE60109472T DE60109472T2 (de) 2000-07-07 2001-07-06 Verfahren zur durchführung von schreib- und leseoperationen in einem passiven matrix-speicher und vorrichtung zur durchführung des verfahrens
AU9035701A AU9035701A (en) 2000-07-07 2001-07-06 A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
EP01970356A EP1323167B1 (en) 2000-07-07 2001-07-06 A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
AT01970356T ATE291272T1 (de) 2000-07-07 2001-07-06 Verfahren zur durchführung von schreib- und leseoperationen in einem passiven matrix-speicher und vorrichtung zur durchführung des verfahrens
DK01970356T DK1323167T3 (da) 2000-07-07 2001-07-06 Fremgangsmåde til at udföre skrive- og læseoperationer i en passiv matrixhukommelse, og apparatur til at udföre fremgangsmåden

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20003507A NO312698B1 (no) 2000-07-07 2000-07-07 Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten

Publications (3)

Publication Number Publication Date
NO20003507D0 NO20003507D0 (no) 2000-07-07
NO20003507L true NO20003507L (no) 2002-01-08
NO312698B1 NO312698B1 (no) 2002-06-17

Family

ID=19911358

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20003507A NO312698B1 (no) 2000-07-07 2000-07-07 Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten

Country Status (13)

Country Link
US (1) US6606261B2 (no)
EP (1) EP1323167B1 (no)
JP (1) JP4542744B2 (no)
KR (1) KR100522286B1 (no)
CN (1) CN1440554B (no)
AT (1) ATE291272T1 (no)
AU (2) AU2001290357B2 (no)
CA (1) CA2415661C (no)
DE (1) DE60109472T2 (no)
ES (1) ES2237599T3 (no)
NO (1) NO312698B1 (no)
RU (1) RU2239888C1 (no)
WO (1) WO2002005288A1 (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937500B2 (en) 2002-09-11 2005-08-30 Thin Film Electronics Asa Method for operating a ferroelectric of electret memory device, and a device of this kind

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US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US20030039233A1 (en) * 2001-08-14 2003-02-27 Aharon Satt Estimation of resources in cellular networks
US6759249B2 (en) * 2002-02-07 2004-07-06 Sharp Laboratories Of America, Inc. Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
JP4282951B2 (ja) * 2002-05-31 2009-06-24 パイオニア株式会社 半導体記憶素子及びその寿命動作開始装置、並びに該半導体記憶素子を備えた情報記録媒体
NO320017B1 (no) 2003-03-26 2005-10-10 Thin Film Electronics Asa Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
NO322040B1 (no) 2004-04-15 2006-08-07 Thin Film Electronics Asa Bimodal drift av ferroelektriske og elektrete minneceller og innretninger
NO324029B1 (no) * 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
JP4148210B2 (ja) * 2004-09-30 2008-09-10 ソニー株式会社 記憶装置及び半導体装置
US20060215437A1 (en) * 2005-03-28 2006-09-28 Trika Sanjeev N Recovering from memory imprints
US20070041233A1 (en) * 2005-08-19 2007-02-22 Seagate Technology Llc Wake-up of ferroelectric thin films for probe storage
US7554832B2 (en) * 2006-07-31 2009-06-30 Sandisk 3D Llc Passive element memory array incorporating reversible polarity word line and bit line decoders
US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
EP1944763A1 (en) 2007-01-12 2008-07-16 STMicroelectronics S.r.l. Reading circuit and method for data storage system
US7420836B1 (en) * 2007-02-13 2008-09-02 International Business Machines Corporation Single-ended memory cell with improved read stability and memory using the cell
US7778098B2 (en) * 2007-12-31 2010-08-17 Cypress Semiconductor Corporation Dummy cell for memory circuits
CN101222686B (zh) * 2008-01-25 2011-08-10 中兴通讯股份有限公司 一种移动终端的状态报告方法
JP4626832B2 (ja) * 2008-07-10 2011-02-09 セイコーエプソン株式会社 強誘電体記憶装置の駆動方法、強誘電体記憶装置および電子機器
KR100934159B1 (ko) * 2008-09-18 2009-12-31 한국과학기술원 강유전체 또는 일렉트렛 메모리 장치
DE102011010946B4 (de) * 2011-02-10 2014-08-28 Texas Instruments Deutschland Gmbh Halbleitervorrichtung und Verfahren zum Identifizieren und Korrigieren eines Bitfehlers in einer FRAM-Speichereinheit einer Halbleitervorrichtung
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US9697913B1 (en) * 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US10497521B1 (en) 2018-10-29 2019-12-03 Xerox Corporation Roller electric contact
KR102634809B1 (ko) * 2018-11-23 2024-02-08 에스케이하이닉스 주식회사 전자 장치 및 그것의 동작 방법
JP2022052154A (ja) 2020-09-23 2022-04-04 キオクシア株式会社 半導体記憶装置

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US5206829A (en) * 1990-10-24 1993-04-27 Sarita Thakoor Thin film ferroelectric electro-optic memory
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JP3279025B2 (ja) * 1993-12-22 2002-04-30 株式会社日立製作所 半導体メモリ
US5898607A (en) * 1994-09-14 1999-04-27 Hitachi, Ltd. Recording/reproducing method and recording/reproducing apparatus
JPH098247A (ja) * 1995-06-15 1997-01-10 Hitachi Ltd 半導体記憶装置
JPH0963294A (ja) * 1995-08-28 1997-03-07 Olympus Optical Co Ltd 強誘電体メモリ及びそれを用いた記録装置
DE69630758T2 (de) * 1995-09-08 2004-05-27 Fujitsu Ltd., Kawasaki Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
RU2143752C1 (ru) * 1998-10-23 1999-12-27 Мохнатюк Александр Анатольевич Способ создания трехмерной оптической памяти
JP3875416B2 (ja) * 1998-11-11 2007-01-31 富士通株式会社 強誘電体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937500B2 (en) 2002-09-11 2005-08-30 Thin Film Electronics Asa Method for operating a ferroelectric of electret memory device, and a device of this kind

Also Published As

Publication number Publication date
WO2002005288A1 (en) 2002-01-17
CA2415661C (en) 2006-03-28
KR100522286B1 (ko) 2005-10-19
CA2415661A1 (en) 2002-01-17
CN1440554B (zh) 2012-03-21
US6606261B2 (en) 2003-08-12
JP2004503052A (ja) 2004-01-29
DE60109472D1 (de) 2005-04-21
CN1440554A (zh) 2003-09-03
RU2239888C1 (ru) 2004-11-10
ES2237599T3 (es) 2005-08-01
US20020027794A1 (en) 2002-03-07
JP4542744B2 (ja) 2010-09-15
NO312698B1 (no) 2002-06-17
KR20030041954A (ko) 2003-05-27
NO20003507D0 (no) 2000-07-07
EP1323167B1 (en) 2005-03-16
AU2001290357B2 (en) 2005-03-03
ATE291272T1 (de) 2005-04-15
DE60109472T2 (de) 2005-08-11
AU9035701A (en) 2002-01-21
EP1323167A1 (en) 2003-07-02

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