ATE319186T1 - Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel - Google Patents

Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel

Info

Publication number
ATE319186T1
ATE319186T1 AT98964096T AT98964096T ATE319186T1 AT E319186 T1 ATE319186 T1 AT E319186T1 AT 98964096 T AT98964096 T AT 98964096T AT 98964096 T AT98964096 T AT 98964096T AT E319186 T1 ATE319186 T1 AT E319186T1
Authority
AT
Austria
Prior art keywords
silicon oxide
glycol solvent
fluoride salt
etching
fluoride
Prior art date
Application number
AT98964096T
Other languages
English (en)
Inventor
William Wojtczak
Long Nguyen
Stephen A Fine
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE319186T1 publication Critical patent/ATE319186T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT98964096T 1997-12-19 1998-12-16 Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel ATE319186T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6833997P 1997-12-19 1997-12-19

Publications (1)

Publication Number Publication Date
ATE319186T1 true ATE319186T1 (de) 2006-03-15

Family

ID=22081929

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98964096T ATE319186T1 (de) 1997-12-19 1998-12-16 Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel

Country Status (7)

Country Link
EP (1) EP1062682B1 (de)
JP (1) JP2001527286A (de)
KR (1) KR100607530B1 (de)
AT (1) ATE319186T1 (de)
DE (1) DE69833692T2 (de)
TW (1) TW579386B (de)
WO (1) WO1999033094A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
US20070207622A1 (en) 2006-02-23 2007-09-06 Micron Technology, Inc. Highly selective doped oxide etchant
WO2007140193A1 (en) * 2006-05-25 2007-12-06 Honeywell International Inc. Selective tantalum carbide etchant, methods of production and uses thereof
EP2268765A4 (de) * 2008-03-07 2011-10-26 Advanced Tech Materials Unselektives oxidätz-nassreinigungsmittel und verwendung
KR101296797B1 (ko) * 2010-03-24 2013-08-14 구수진 폐태양전지로부터 고순도 폴리 실리콘을 회수하는 방법
KR102111056B1 (ko) * 2014-03-28 2020-05-14 동우 화인켐 주식회사 실리콘 산화막용 비수계 식각액 조성물
TWI686461B (zh) * 2019-02-01 2020-03-01 才將科技股份有限公司 一種具有高矽／二氧化矽蝕刻的選擇比的矽蝕刻劑及其應用
CN112410036B (zh) * 2020-10-29 2021-09-07 湖北兴福电子材料有限公司 一种低选择性的bpsg和peteos薄膜的蚀刻液
CN118830064A (zh) * 2022-03-14 2024-10-22 日本化药株式会社 处理液及其使用方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4568540A (en) * 1984-04-18 1986-02-04 Johnson & Johnson Oral hygiene compositions
US4921572A (en) * 1989-05-04 1990-05-01 Olin Corporation Etchant solutions containing hydrogen fluoride and a polyammonium fluoride salt
SU1737024A1 (ru) * 1990-01-02 1992-05-30 Новочеркасский Политехнический Институт Им.Серго Орджоникидзе Электролит блест щего никелировани
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5421906A (en) * 1993-04-05 1995-06-06 Enclean Environmental Services Group, Inc. Methods for removal of contaminants from surfaces
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition

Also Published As

Publication number Publication date
EP1062682A1 (de) 2000-12-27
KR100607530B1 (ko) 2006-08-02
TW579386B (en) 2004-03-11
DE69833692T2 (de) 2006-11-23
KR20010033352A (ko) 2001-04-25
EP1062682A4 (de) 2001-07-04
WO1999033094A1 (en) 1999-07-01
JP2001527286A (ja) 2001-12-25
EP1062682B1 (de) 2006-03-01
DE69833692D1 (de) 2006-04-27

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