ATE32105T1 - Reaktive kathodenzerstaeubung eines metalles der gruppe 4a bei hoher geschwindigkeit. - Google Patents

Reaktive kathodenzerstaeubung eines metalles der gruppe 4a bei hoher geschwindigkeit.

Info

Publication number
ATE32105T1
ATE32105T1 AT83306545T AT83306545T ATE32105T1 AT E32105 T1 ATE32105 T1 AT E32105T1 AT 83306545 T AT83306545 T AT 83306545T AT 83306545 T AT83306545 T AT 83306545T AT E32105 T1 ATE32105 T1 AT E32105T1
Authority
AT
Austria
Prior art keywords
metal
target
rate
reactive
admission
Prior art date
Application number
AT83306545T
Other languages
English (en)
Inventor
William Dallas Sproul
James Raymond Tomashek
Original Assignee
Borg Warner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23914047&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE32105(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Borg Warner filed Critical Borg Warner
Application granted granted Critical
Publication of ATE32105T1 publication Critical patent/ATE32105T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Surface Treatment Of Glass Fibres Or Filaments (AREA)
AT83306545T 1983-04-04 1983-10-27 Reaktive kathodenzerstaeubung eines metalles der gruppe 4a bei hoher geschwindigkeit. ATE32105T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/481,953 US4428811A (en) 1983-04-04 1983-04-04 Rapid rate reactive sputtering of a group IVb metal
EP83306545A EP0121019B1 (de) 1983-04-04 1983-10-27 Reaktive Kathodenzerstäubung eines Metalles der Gruppe 4A bei hoher Geschwindigkeit

Publications (1)

Publication Number Publication Date
ATE32105T1 true ATE32105T1 (de) 1988-02-15

Family

ID=23914047

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83306545T ATE32105T1 (de) 1983-04-04 1983-10-27 Reaktive kathodenzerstaeubung eines metalles der gruppe 4a bei hoher geschwindigkeit.

Country Status (7)

Country Link
US (1) US4428811A (de)
EP (1) EP0121019B1 (de)
JP (1) JPS59185776A (de)
AT (1) ATE32105T1 (de)
AU (1) AU565327B2 (de)
CA (1) CA1198084A (de)
DE (1) DE3375406D1 (de)

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EP0257783A1 (de) * 1986-08-22 1988-03-02 Borg-Warner Corporation Kontrollsystem und Verfahren zur Kontrolle des reaktiven Aufstäubens einer Metallverbindung
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DE3709177A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden
DE3726731A1 (de) * 1987-08-11 1989-02-23 Hartec Ges Fuer Hartstoffe Und Verfahren zum aufbringen von ueberzuegen auf gegenstaende mittels magnetfeldunterstuetzter kathodenzerstaeubung im vakuum
JPH01268859A (ja) * 1988-04-20 1989-10-26 Casio Comput Co Ltd 透明導電膜の形成方法および形成装置
KR920703870A (ko) * 1989-08-07 1992-12-18 원본미기재 광학적 산화물 코우팅을 증진된 속도로 부착하는 방법
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats
JPH0774445B2 (ja) * 1989-11-30 1995-08-09 アプライド マテリアルズ インコーポレーテッド 閉ループ制御反応スパッタリングにより所定成分比の金属化合物層を形成するプロセス及び装置
GB9005321D0 (en) * 1990-03-09 1990-05-02 Matthews Allan Modulated structure composites produced by vapour disposition
JPH0830260B2 (ja) * 1990-08-22 1996-03-27 アネルバ株式会社 真空処理装置
US5242753A (en) * 1991-07-11 1993-09-07 Praxair S.T. Technology, Inc. Substoichiometric zirconium nitride coating
DE4138927C2 (de) * 1991-11-27 2000-01-13 Leybold Ag Vorrichtung zur Bestimmung der Gaskonzentration in einer Vakuumkammer
DE4205017A1 (de) * 1992-02-19 1993-08-26 Leybold Ag Verfahren zur erzeugung einer dekorativen goldlegierungsschicht
JP3343620B2 (ja) * 1992-04-09 2002-11-11 アネルバ株式会社 マグネトロンスパッタリングによる薄膜形成方法および装置
US5286676A (en) * 1992-06-15 1994-02-15 Hewlett-Packard Company Methods of making integrated circuit barrier structures
US5942089A (en) * 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
US5789071A (en) * 1992-11-09 1998-08-04 Northwestern University Multilayer oxide coatings
US5431734A (en) * 1994-04-28 1995-07-11 International Business Machines Corporation Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
IL113882A0 (en) * 1994-06-03 1995-08-31 Varian Associates Tin deposition method
ZA956036B (en) * 1994-08-02 1996-02-23 Boc Group Inc Sputtering silicon dielectric films with noble gas mixtures
US5587227A (en) * 1994-10-27 1996-12-24 Kabushiki Kaisha Riken Coating of chromium and nitrogen having good wear resistance properties
US5672386A (en) * 1994-10-27 1997-09-30 Kabushiki Kaisha Riken Process for forming a coating of chromium and nitrogen having good wear resistance properties
DE19506515C1 (de) * 1995-02-24 1996-03-07 Fraunhofer Ges Forschung Verfahren zur reaktiven Beschichtung
US6468401B1 (en) * 1995-04-24 2002-10-22 Bridgestone Corporation Formation of metal compound thin film and preparation of rubber composite material
US6893543B1 (en) * 1995-09-01 2005-05-17 Unaxis Balzers Ag Information carrier and method for producing the same
DE19609970A1 (de) * 1996-03-14 1997-09-18 Leybold Systems Gmbh Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US5667645A (en) * 1996-06-28 1997-09-16 Micron Technology, Inc. Method of sputter deposition
US6360423B1 (en) 1997-12-16 2002-03-26 Clad Metals Llc Stick resistant coating for cookware
US7093340B2 (en) 1997-12-16 2006-08-22 All-Clad Metalcrafters Llc Stick resistant ceramic coating for cookware
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US6468814B1 (en) * 1998-07-24 2002-10-22 Leybold Inficon, Inc. Detection of nontransient processing anomalies in vacuum manufacturing process
DE50100613D1 (de) * 2000-03-27 2003-10-16 Fraunhofer Ges Forschung Verfahren zur regelung von reaktiven sputterprozessen
US6645639B1 (en) 2000-10-13 2003-11-11 Applied Thin Films, Inc. Epitaxial oxide films via nitride conversion
US6573209B1 (en) * 2000-10-13 2003-06-03 Applied Thin Films, Inc. Zirconium nitride and yttrium nitride solid solution composition
US20050145487A1 (en) * 2002-04-15 2005-07-07 Michael Geisler Coating installation
DE10216671A1 (de) * 2002-04-15 2003-12-18 Applied Films Gmbh & Co Kg Beschichtungsanlage
US20040129557A1 (en) * 2002-11-21 2004-07-08 Plasmion Corporation Method of forming non-oxide thin films using negative sputter ion beam source
US20040099525A1 (en) * 2002-11-21 2004-05-27 Plasmion Corporation Method of forming oxide thin films using negative sputter ion beam source
WO2004076705A2 (en) * 2003-02-24 2004-09-10 University Of South Florida Reactive physical vapor deposition with sequential reactive gas injection
US7232506B2 (en) * 2003-10-08 2007-06-19 Deposition Sciences, Inc. System and method for feedforward control in thin film coating processes
DE102004024351A1 (de) * 2004-05-17 2005-12-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Aufbringen eines Dünnschichtsystems mittels Zerstäuben
US7749564B2 (en) * 2005-03-31 2010-07-06 Caterpillar Inc. Method and apparatus for the production of thin film coatings
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
US8449943B2 (en) * 2007-02-20 2013-05-28 Tech M3, Inc. Composite brake disks and methods for coating
US20080299289A1 (en) * 2007-05-29 2008-12-04 Fisk Andrew E Optimum Surface Texture Geometry
US8202820B2 (en) * 2008-08-26 2012-06-19 Northwestern University Non-stoichiometric mixed-phase titania photocatalyst
JP5743266B2 (ja) * 2010-08-06 2015-07-01 キヤノンアネルバ株式会社 成膜装置及びキャリブレーション方法
GB201212540D0 (en) 2012-07-13 2012-08-29 Uab Electrum Balticum Vacuum treatment process monitoring and control

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JPS55161067A (en) * 1979-06-04 1980-12-15 Hitachi Ltd Manufacturing apparatus of thin film
DD146306A1 (de) * 1979-10-02 1981-02-04 Guenther Beister Verfahren zum reaktiven aufstaeuben dielektrischer schichten
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Also Published As

Publication number Publication date
AU565327B2 (en) 1987-09-10
CA1198084A (en) 1985-12-17
AU2047083A (en) 1984-10-11
EP0121019B1 (de) 1988-01-20
EP0121019A3 (en) 1984-11-14
JPS59185776A (ja) 1984-10-22
EP0121019A2 (de) 1984-10-10
DE3375406D1 (en) 1988-02-25
US4428811A (en) 1984-01-31

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee
RZN Patent revoked